It is an object of the present invention to provide a
semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the
semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN
multiple quantum well
active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN
electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2
blocking layer 9, an Ni / ITO cladding layer
electrode 10 as a transparent
electrode, a Ti / Au pad
electrode 11, and a Ti / Al / Ni / Au electrode 12. The SiO2
blocking layer 9 is formed above the InGaN
multiple quantum well
active layer 5 so as to have an opening. The Ni / ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN
multiple quantum well
active layer, and serves as a cladding layer.