The invention provides a method for manufacturing an MIS (
Metal-Insulator-
Semiconductor)
capacitor, which can effectively reduce the thickness of a film
interface layer by
etching a
silicon island on an SOI (
Silicon On Insulator) substrate and removing an
oxide layer on the surface of the
silicon island by adopting HF. The method comprises the following steps of: firstly, growing a thin oxynitride
passivation layer on the Si surface by using a
plasma atomic layer deposition method and adopting in-situ O2 and NH3
plasma so as to
restrict the growth of the
interface layer; and secondly, growing an HfLaO
dielectric film by using a
plasma growth manner, carrying out
oxygen plasma aftertreatment on the HfLaO
dielectric film in situ to reduce
oxygen vacancy in the film; and thirdly,
processing photoresist by using a
chlorobenzene solution, so that burrs on the edge of the
photoresist can be modified to ensure that the subsequent
metal lifting process is simpler and more accurate. The
MIS capacitor manufactured by adopting the method disclosed by the invention is beneficial to reduction of the quantity of additional interface
layers,
thinning of thickness of each
interface layer, reduction of roughness of the interface
layers, restriction of element dispersion between the substrate and the film and reduction of equivalent
gate oxide thickness, and thus the electric property of the
MIS capacitor is effectively improved.