Anti-reduction BME ceramic dielectric capacitor and ceramic material for capacitor

A technology of ceramic materials and capacitors, applied in the direction of fixed capacitor dielectric, capacitors, fixed capacitors, etc., can solve the problems of complex process, low production efficiency, and inapplicability to large-scale industrial production, so as to improve the dielectric constant, reduce loss, improve Anti-reduction effect

Active Publication Date: 2021-04-13
FUJIAN TORCH ELECTRON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the patent CN101183610B, the particle size of the powder is 100-150nm, and the dielectric constant is 2000-2500, but it adopts the chemical coating method, the process is complicated, the production efficiency is low, and it is not suitable for mass industrial production

Method used

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  • Anti-reduction BME ceramic dielectric capacitor and ceramic material for capacitor
  • Anti-reduction BME ceramic dielectric capacitor and ceramic material for capacitor
  • Anti-reduction BME ceramic dielectric capacitor and ceramic material for capacitor

Examples

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preparation example Construction

[0042] Its preparation method comprises the following steps:

[0043] Step 1, weighing and mixing the raw materials except barium titanate, nano-silicon dioxide and nano-hafnium dioxide in the ceramic material for anti-reduction BME ceramic capacitors according to their proportions, to obtain soluble salt additives;

[0044] Step 2, add deionized water to the soluble salt additive obtained in step 1, and stir for 4-8 hours to completely dissolve the additive, wherein the weight ratio of the soluble salt additive to deionized water is 1:1-2;

[0045] Step 3, add barium titanate, nano-silicon dioxide and nano-hafnium dioxide to the solution obtained in step 2, and stir the nodular ink, accompanied by ultrasonic dispersion, ultrasonic frequency 20-40kHz, make barium titanate and nano-silicon dioxide, Nano-hafnium dioxide is evenly dispersed in the solution to form a precursor mixture;

[0046] Step 4: Perform ultrasonic spray pyrolysis and granulation on the precursor mixture pr...

Embodiment 1

[0051] An anti-reduction BME ceramic capacitor is prepared by using ceramic material 1 for an anti-reduction BME ceramic capacitor through the following steps:

[0052] Step 1, porcelain pulp scouring: According to the weight ratio of ceramic material: ethanol: toluene: dispersant = 100:20:20:1 respectively add ceramic material, ethanol, toluene, dispersant, after ball milling for 5 hours, then according to the weight ratio of ceramic material: Dioctyl phthalate: polyvinyl butyral = 100:5:10 Add dioctyl phthalate and polyvinyl butyral, and continue ball milling for 5 hours to obtain casting slurry;

[0053] Step 2, coating: coating the prepared casting slurry into a dielectric layer, the coating thickness is ≦8um;

[0054] Step 3, printing: the nickel metal inner pole 2 is printed onto the dielectric layer, and the dielectric layer is superimposed on each other, and then subjected to hydraulic pressure and slicing to produce a green body;

[0055] Step 4, degreasing: place th...

Embodiment 2

[0067] An anti-reduction BME ceramic capacitor is prepared by using ceramic material 1 for an anti-reduction BME ceramic capacitor through the following steps:

[0068] Step 1, porcelain pulp scouring: according to the weight ratio of ceramic material: ethanol: toluene: dispersant = 100:15:15:0.5 respectively add ceramic material, ethanol, toluene, dispersant, after ball milling for 1 hour, then according to the weight ratio of ceramic material: Dioctyl phthalate: polyvinyl butyral = 100:3:20 Add dioctyl phthalate and polyvinyl butyral, and continue ball milling for 1 hour to obtain cast slurry;

[0069] Step 2, coating: coating the prepared casting slurry into a dielectric layer, the coating thickness is ≦8um;

[0070] Step 3, printing: the nickel metal inner pole 2 is printed onto the dielectric layer, and the dielectric layer is superimposed on each other, and then subjected to hydraulic pressure and slicing to produce a green body;

[0071] Step 4, degreasing: place the g...

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Abstract

The invention discloses an anti-reduction BME ceramic dielectric capacitor and a ceramic material for the capacitor. The ceramic material for the anti-reduction BME ceramic dielectric capacitor consists of the following raw materials: barium titanate, vanadyl oxalate, manganous nitrate, magnesium nitrate, strontium nitrate, rare earth nitrate A, rare earth nitrate B, chromic nitrate, barium nitrate, calcium bicarbonate, nano silicon dioxide and nano hafnium dioxide. By adding additives such as vanadyl oxalate, barium nitrate, calcium bicarbonate, nano silicon dioxide, nano hafnium dioxide and the like, the loss is reduced, the insulation resistance is improved, the dielectric withstand voltage is improved, and good electrical properties are obtained.

Description

technical field [0001] The invention belongs to the field of ceramic capacitor preparation, and in particular relates to an anti-reduction BME ceramic capacitor and a ceramic material for the capacitor. Background technique [0002] With the development of miniaturization and multi-function of electronic products, surface mount technology has been widely used and developed. Multilayer Ceramic Capacitor (MLCC) is one of the most widely used chip components in surface mount technology. With the increasing demand for smaller size and higher performance electronic equipment, higher requirements are put forward for multilayer ceramic capacitors in terms of smaller volume, larger capacity, higher reliability and lower cost. [0003] The multilayer ceramic capacitor adopts the tape casting-co-firing process, and the electrode layer and the dielectric layer are superimposed on each other through tape casting, printing, and lamination, and then degreased, sintered, and terminal elec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/49C04B35/628C04B35/626C04B35/64H01G4/12
CPCC04B35/49C04B35/4682C04B35/62805C04B35/62605C04B35/62695C04B35/62645C04B35/64C04B35/6261H01G4/1227C04B2235/3239C04B2235/3262C04B2235/3206C04B2235/3213C04B2235/3215C04B2235/3241C04B2235/3244C04B2235/3208C04B2235/3418C04B2235/3224C04B2235/5454C04B2235/5445C04B2235/6582C04B2235/6583C04B2235/656C04B2235/6567
Inventor 洪志超陈本夏喻巧陈永虹宋运雄
Owner FUJIAN TORCH ELECTRON TECH CO LTD
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