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Bi(1-x)RExFe0.96Co0.02Mn0.02O3 ferroelectric film and preparation method thereof

A ferroelectric thin film and thin film technology, applied in the direction of coating, etc., can solve the problems that the antiferromagnetism of the thin film is difficult to measure, the ferroelectric properties cannot be obtained, and it is difficult to prepare thin films, etc., to achieve excellent ferroelectric properties and ferromagnetism Energy, reduce defects, improve the effect of magnetoelectric performance

Active Publication Date: 2015-04-01
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, since BiFeO 3 In the presence of Fe and Bi, it is difficult to prepare pure BiFeO 3 film
BiFeO 3 There is a large leakage conduction current in the film, so that the ferroelectric properties cannot be measured correctly and saturated polarization is obtained, and the antiferromagnetism of the film at room temperature is also difficult to measure

Method used

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  • Bi(1-x)RExFe0.96Co0.02Mn0.02O3 ferroelectric film and preparation method thereof
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  • Bi(1-x)RExFe0.96Co0.02Mn0.02O3 ferroelectric film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Step 1, dissolving bismuth nitrate, ferric nitrate, cobalt nitrate, manganese acetate and lanthanum nitrate in a solvent with a molar ratio of 0.987:0.96:0.02:0.02:0.06 (excess bismuth nitrate, x=0.06, RE=La), magnetic After stirring for 2.5 h, a stable Bi with a total concentration of metal ions of 0.1 mol / L was obtained 0.94 La 0.06 Fe 0.96 co 0.02 mn 0.02 o 3 Precursor solution, the volume ratio of ethylene glycol methyl ether and acetic anhydride in the solvent is 2.5:1;

[0031] Step 2: Select the FTO / glass substrate as the substrate, place the substrate in detergent, acetone, and ethanol in sequence, and clean it with ultrasonic waves for 10 minutes, then wash the substrate with distilled water and dry it with nitrogen; then place it in an oven at 60°C Baked for 5 minutes, then took it out and let it stand to room temperature; finally, placed the substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness". Spin...

Embodiment 2

[0034] Step 1, dissolving bismuth nitrate, ferric nitrate, cobalt nitrate, manganese acetate and erbium nitrate in a solvent in a molar ratio of 0.966:0.96:0.02:0.02:0.08 (excess bismuth nitrate, x=0.08, RE=Er), magnetic After stirring for 2 h, a stable Bi with a total concentration of metal ions of 0.3 mol / L was obtained. 0.92 Er 0.08 Fe 0.96 co 0.02 mn 0.02 o 3 Precursor solution, the volume ratio of ethylene glycol methyl ether and acetic anhydride in the solvent is 3:1;

[0035] Step 2: Select the FTO / glass substrate as the substrate, place the substrate in detergent, acetone, and ethanol in sequence, and clean it with ultrasonic waves for 10 minutes, then wash the substrate with distilled water and dry it with nitrogen; then place it in an oven at 60°C Baked for 5 minutes, then took it out and let it stand to room temperature; finally, placed the substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness". Spin-coating...

Embodiment 3

[0039] Step 1, dissolving bismuth nitrate, ferric nitrate, cobalt nitrate, manganese acetate and erbium nitrate in a solvent (excess bismuth nitrate, x=0.10, RE=Er) in a molar ratio of 0.945:0.96:0.02:0.02:0.10, magnetic After stirring for 2 h, a stable Bi with a total concentration of metal ions of 0.3 mol / L was obtained. 0.90 Er 0.10 Fe 0.96 co 0.02 mn 0.02 o 3 Precursor solution, the volume ratio of ethylene glycol methyl ether and acetic anhydride in the solvent is 3:1;

[0040] Step 2: Select the FTO / glass substrate as the substrate, place the substrate in detergent, acetone, and ethanol in sequence, and clean it with ultrasonic waves for 10 minutes, then wash the substrate with distilled water and dry it with nitrogen; then place it in an oven at 60°C Baked for 5 minutes, then took it out and let it stand to room temperature; finally, placed the substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness". Spin-coating...

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Abstract

The invention provides a Bi(1-x)RExFe0.96Co0.02Mn0.02O3 ferroelectric film and a preparation method thereof. The preparation method comprises the following steps: preparing a Bi(1-x)RExFe0.96Co0.02Mn0.02O3 precursor solution from bismuth nitrate, ferric nitrate, cobalt nitrate, manganese acetate and nitric acid RE which serve as raw materials, wherein x is 0.06-0.12, and RE is La, Eu or Er; and coating the precursor solution on a substrate in a spinning manner, uniformly coating, baking and annealing to obtain the Bi(1-x)RExFe0.96Co0.02Mn0.02O3 ferroelectric film. By adopting the method, requirement for equipment is simple, the experiment condition can be easily achieved, the doping amount can be easily controlled, and the ferroelectric performance of the film can be greatly improved, so that the prepared Bi(1-x)RExFe0.96Co0.02Mn0.02O3 ferroelectric film has good uniformly, less current leakage and high remanent polarization.

Description

technical field [0001] The invention belongs to the field of functional materials and relates to a Bi 1-x RE x Fe 0.96 co 0.02 mn 0.02 o 3 Ferroelectric thin film and its preparation method. Background technique [0002] As one of the few single-phase multiferroic materials with both ferroelectric and ferromagnetic properties at room temperature, BiFeO 3 It has attracted much attention due to its application prospects in spintronic devices, random access memory devices and infrared pyroelectric detectors. Pure phase BiFeO 3 It has a distorted perovskite structure (belonging to the R3c point group), its Curie temperature Tc=1103k, and its Neil temperature TN=643k. [0003] However, since BiFeO 3 In the presence of Fe and Bi, it is difficult to prepare pure BiFeO 3 film. BiFeO 3 There is a large leakage conduction current in the film, so that the ferroelectric properties cannot be measured correctly and the saturation polarization is obtained, and the antiferromagn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22
CPCC03C17/22C03C2217/28
Inventor 谈国强郑玉娟任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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