31results about How to "Doping concentration controllable" patented technology

The invention relates to a highly-transparent metal oxide-doped dispersion capable of absorbing ultraviolet ray at full waveband and a preparation method thereof. The highly-transparent metal oxide-doped dispersion comprises the metal oxide-doped nanoparticles with surface modified by a surfactant, and a disperse medium, wherein the metal oxide-doped nanoparticle is 10-60wt%, the disperse medium is 25-90wt% and the surfactant is 0-15wt%; and the particle size distribution of the metal oxide-doped nanoparticles is narrow, and the particle size of the particles is 1-10nm. The preparation method comprises the following steps: an aqueous alkali is reacted with metal salt and doping element salting liquid and then deposited to obtain a precursor mixture of hydroxide, then transferred to an autoclave, a reaction condition is controlled, and the product is washed, and subjected to phase inversion to obtain the highly-transparent metal oxide-doped dispersion. The highly-transparent metal oxide-doped dispersion can completely obstruct the ultraviolet ray at the wave bands of 100-400nm.

The invention relates to a method for preparing a p-type zinc oxide film through K-H co-doping. At present, the preparation of a K-H co-doped p-ZnO film is not performed by using a pulse laser deposition method. The method provided by the invention comprises the following steps of: firstly, performing ball-mill mixing on potassium hydroxide powder, zinc oxide powder and a caking agent in a ball mill to obtain precursor powder; secondly, performing press forming on the precursor powder, and sintering the precursor powder to obtain a potassium hydroxide doped zinc oxide target material; thirdly, putting the target material and a substrate into a vacuum chamber of a pulse laser deposition device respectively, heating the substrate, introducing a mixed gas of argon and oxygen into the vacuum chamber, and starting a laser source in the pulse laser deposition device to shoot laser beams to the target material so as to grow a film; and finally, when the film grows to the required thickness, turning off the laser source, and performing in situ annealing under an oxygen protected atmosphere. According to the method provided by the invention, the doping concentration is high and is controllable at the same time, gap filling defects can be overcome, and the prepared p-type ZnO film has high electrical properties, repeatability and stability.

The invention discloses a preparation method of a back-illuminated image sensor. The preparation method comprises the following steps: providing a semiconductor substrate, wherein the semiconductor substrate is provided with a first side and a second side opposite to the first side; preparing a first epitaxial semiconductor layer and a second epitaxial semiconductor layer on the first side of the semiconductor substrate; forming first ion injection regions in the second epitaxial semiconductor layer in photodiode regions and forming first isolation structures in the second epitaxial semiconductor layer in isolation regions, wherein the first ion injection regions are arranged on the surface of the side deviating from the first epitaxial semiconductor layer; thinning the second side of the semiconductor substrate until the first epitaxial semiconductor layer is exposed; preparing second isolation structures in the exposed first epitaxial semiconductor layer. The preparation method of the back-illuminated image sensor can achieve the effects of improving the quantum efficiency (QE) of infrared light and also improving the QE of blue light.

The invention provides a semiconductor structure which comprises a substrate, a grid stack arranged on the substrate, a side wall arranged on a side wall of the grid stack, a source / drain expansion zone arranged on the substrate on the two sides of the grid stack and formed in an epitaxial growth mode, and a source / drain zone arranged in the substrate on the two sides of the source / drain expansion zone. The invention further correspondingly provides a method for manufacturing the semiconductor structure. The semiconductor structure and the method for manufacturing the semiconductor structure can form the source / drain expansion zone which is high in doping concentration and small in depth so as to effectively improve performances of the semiconductor structure.

The invention relates to a double-acceptor co-doping method for growing a p-(K-N):ZnO thin film. At present, a radio frequency-magnetron sputtering method is not used for growing the p-(K-N):ZnO thin film. The double-acceptor co-doping method comprises the following steps of: firstly carrying out ball milling and pre-sintering on potassium oxide powder and zinc oxide powder in a ball grinder, adding a binding agent for pressing formation, and sintering to prepare a zinc oxide target doped with potassium; then placing the target and a substrate into a vacuum chamber of a radio frequency-magnetron sputtering device, vacuumizing and heating the substrate, feeding a mixed gas of argon and nitric oxide into the vacuum chamber, opening a radio frequency power source after adjusting a sputtering air pressure, then growing the thin film after pre-sintering, closing the radio frequency power source, the argon and the nitric oxide after the thin film grows to the needed thickness, and feeding oxygen into carry out in-situ annealing. The double-acceptor co-doping method has the advantages of higher doping density and hole carrier concentration, controlled doping density as well as lower acceptor level; and the prepared p-type ZnO thin film has good electricity performance and better repeatability and stability.

The invention discloses a preparation method of vanadium trioxide or doped vanadium trioxide nano powder. The preparation method comprises the following steps of: firstly, feeding vanadium trioxide powder or vanadium trioxide mixed powder doped with an oxide into a powder conveyer in a stirring state; secondly, feeding the vanadium trioxide powder or the vanadium trioxide mixed powder doped with the oxide into a plasma chamber in which the temperature of plasma arc is 2,000-2,500 DEG C in a reduction reaction atmosphere, by virtue of nitrogen at a velocity of 10-120g / min, and carrying out reduction reaction, wherein the reduction reaction atmosphere is a mixture gas of hydrogen and steam in a volume ratio of 1:(10-20), and the flow is 15-75L / min; subsequently, collecting a reduction reaction product from the plasma chamber by using a nano powder capturer, thus preparing the vanadium trioxide or the doped vanadium trioxide nano powder with a particle size of 20-100nm. The process is simple, raw materials are easily available, waste discharge is prevented, and the vanadium trioxide or the doped vanadium trioxide nano powder of high purity can be rapidly prepared in large scale with low cost.

The invention belongs to the field of semiconductor preparation and discloses a doping preparation and repair method for graphene. The method comprises the following steps: a graphene film grows on aspecific substrate with a CVD method; the graphene film is transferred to the surface of a required substrate, and graphene is etched in a required shape by oxygen plasma; N-type or P-type element doping is performed on graphene with an MPCVD method, and semiconductor graphene is repaired during doping. The prepared semiconductor graphene is applicable to wider substrates, concentration of dopingelements is controllable, part of graphene defects in a semiconductor can be overcome by repairing, a semiconductor graphene film with a certain area can be formed by flaky semiconductor graphene andhas lower impedance and shorter response time.

The invention discloses a method for preparing a transverse grapheme PIN junction, and belongs to the field of semiconductor devices and thin film crystal growth. According to n-type or p-type bottom layer grapheme prepared on a substrate, the needed bottom layer grapheme is reserved through photoetching, a shielding layer is deposited on the bottom layer grapheme needing to serve as an original doping type area, the other doping type transferring grapheme is transferred to the surface of an obtained sample, then the photoetching and corrosion are carried out to remove the shielding layer and the transferring grapheme on the surface to form the transverse grapheme PIN junction. Controllable preparation of the transverse grapheme PIN junction is achieved through the photoetching technology and the transferring technology, and the gap of the PIN junction preparation technology is filled in. In the preparation method, doping concentration, layer thicknesses, sizes and the like of materials in the grapheme PIN junction are easy to control, and the technology used is simple and easy to achieve. The prepared transverse grapheme PIN junction can be applied to preparation of a grapheme photoelectric detector and other functional devices and improves performance of the devices.

The invention discloses a core-shell Mn:ZnO / Mn:ZnS diluted magnetic semiconductor heterogenous nano material and a preparation method thereof, belonging to the cross field of spinning electronics and optoelectronics. The material uses Mn-doped ZnO diluted magnetic semiconductor nanorods as the core and Mn-doped ZnS nanoparticles as the shell. The preparation method comprises the following steps: preparing Mn-doped ZnO nanorods by a hydrothermal method; dispersing the Mn-doped ZnO nanorods in a thioacetamide solution; and carrying out sulfurization reaction in a water bath kettle, washing the reaction precipitate, and drying to obtain the diluted magnetic semiconductor heterogenous nano material. The material has ferromagnetic properties at room temperature, and the Curie temperature is higher than 300K; and the material has obvious ultraviolet and visible light luminescent properties, and thus, has important research meanings and favorable application prospects in the fields of spinning electronics and optoelectronics. The preparation method has the advantages of simple steps, simple experimental apparatus, mild reaction conditions and low preparation cost, can easily control the shell thickness and Mn doping amount, and is easy to operate.

The invention relates to a blocking impurity band detector manufacturing method based on an SOI. The method includes the steps that epitaxial is carried out on a top silicon layer made of SOI materials with an in-situ doping technology to grow an absorbing layer; heavy doping is carried out on the absorbing layer to grow a conducting layer; a high-resistance silicon wafer is bonded to the conducting layer; a bottom silicon layer of the SOI materials is removed with a deep silicon etching technology; a buried oxide layer of the SOI materials is removed with a wet etching technology; an electrode transition area is formed on the top silicon layer of the SOI materials with the ion implantation technology and the rapid thermal annealing technology; a micro-mesa is formed with a deep silicon etching technology, and a silicon nitride passivation layer is deposited; holes are formed in the silicon nitride passivation layer in an etched mode, and positive electrodes and negative electrodes are formed with an electron beam evaporation technology; electrode ohmic contact is formed with an annealing technology; the positive electrodes and the negative electrodes are thickened with an electron beam evaporation technology. According to the technical scheme, the quantum efficiency and the response ratio of a blocking impurity band detector are improved.