The invention relates to a method for preparing a p-type
zinc oxide film through K-H co-
doping. At present, the preparation of a K-H co-doped p-ZnO film is not performed by using a pulse
laser deposition method. The method provided by the invention comprises the following steps of: firstly, performing ball-mill mixing on
potassium hydroxide powder,
zinc oxide powder and a
caking agent in a
ball mill to obtain precursor
powder; secondly, performing press forming on the precursor powder, and
sintering the precursor powder to obtain a
potassium hydroxide doped
zinc oxide target material; thirdly, putting the target material and a substrate into a
vacuum chamber of a pulse
laser deposition device respectively, heating the substrate, introducing a
mixed gas of
argon and
oxygen into the
vacuum chamber, and starting a
laser source in the pulse laser deposition device to
shoot laser beams to the target material so as to grow a film; and finally, when the film grows to the required thickness, turning off the
laser source, and performing in situ annealing under an
oxygen protected
atmosphere. According to the method provided by the invention, the
doping concentration is high and is controllable at the same time,
gap filling defects can be overcome, and the prepared p-type ZnO film has high electrical properties,
repeatability and stability.