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A kind of preparation method of lateral graphene pin junction

A graphene, lateral technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as difficulty in realizing graphene PIN junctions, and achieve the effects of easy implementation, simple process, and improved performance

Active Publication Date: 2015-09-23
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The doping control of two-dimensional graphene materials is a difficult problem at present, especially the realization of graphene PIN junctions is difficult

Method used

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  • A kind of preparation method of lateral graphene pin junction
  • A kind of preparation method of lateral graphene pin junction
  • A kind of preparation method of lateral graphene pin junction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Depend on figure 1 As can be seen from the shown flow chart, the preparation steps of Example 1 are:

[0021] In the first step, the underlying graphene is grown on the SiC substrate 2 by SiC pyrolysis, the doping type of the underlying graphene is n-type, and the doping concentration is 10 12 -10 14 cm -2 controllable.

[0022] In the second step, photolithography is used to retain the region that needs to retain n-type doping on the bottom graphene, and other regions are removed by oxygen plasma etching; the region that needs to retain n-type doping is to be used as N region 5 and I region 7, the removed area is the area to be used as the P area 6.

[0023] The third step is to precipitate Si on the bottom graphene in the sample obtained in the second step above, which needs to be an n-type region 3 N 4 Blocking layer 3.

[0024] The fourth step is to transfer the p-type transfer graphene 4 grown by CVD to the sample obtained in the third step. At this time, t...

Embodiment 2

[0028] Different from Example 1, the preparation steps of Example 2 are:

[0029] In the first step, the n-type bottom graphene 1 is grown on the SiC substrate 2 by the CVD method, and the bottom graphene is annealed in a hydrogen atmosphere, and the hydrogen atoms enter the interface between the bottom graphene and the SiC substrate 2, so that the bottom graphene Converted to p-type doping with a doping concentration of 10 12 -10 14 cm -2 controllable.

[0030] In the second step, photolithography is used to retain the region on the bottom graphene that needs to retain p-type doping, and other regions are removed by oxygen plasma etching; the region that needs to retain p-type doping is to be used as P region 6 and I region 7, the removed area is the area to be used as the N area 5.

[0031] In the third step, SiO is deposited on the region that needs to be p-type in the above-mentioned bottom graphene 2 Occlusion layer.

[0032] The fourth step is to transfer the n-ty...

Embodiment 3

[0036] Depend on figure 2 It can be seen that, unlike Example 1 and Example 2, the specific preparation steps of this example are:

[0037] In the first step, the p-type bottom graphene 8 is grown on the Cu substrate by the CVD method; the p-type bottom graphene 8 is transferred to the Si substrate 11 with a doping concentration of 10 12 -10 14 cm -2 controllable.

[0038] In the second step, photolithography is used to retain the region on the bottom graphene that needs to be retained, and other regions are removed by oxygen plasma etching; the region that needs to retain p-type doping is to be used as P region 6 and I region 7 The area to be removed is the area to be used as the N area 5.

[0039] In the third step, an Au shielding layer 9 is deposited on the region of the bottom graphene that needs to be p-type.

[0040] The fourth step is to transfer the n-type graphene grown by CVD to the sample obtained in the third step. At this time, the surfaces of the shieldin...

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Abstract

The invention discloses a method for preparing a transverse grapheme PIN junction, and belongs to the field of semiconductor devices and thin film crystal growth. According to n-type or p-type bottom layer grapheme prepared on a substrate, the needed bottom layer grapheme is reserved through photoetching, a shielding layer is deposited on the bottom layer grapheme needing to serve as an original doping type area, the other doping type transferring grapheme is transferred to the surface of an obtained sample, then the photoetching and corrosion are carried out to remove the shielding layer and the transferring grapheme on the surface to form the transverse grapheme PIN junction. Controllable preparation of the transverse grapheme PIN junction is achieved through the photoetching technology and the transferring technology, and the gap of the PIN junction preparation technology is filled in. In the preparation method, doping concentration, layer thicknesses, sizes and the like of materials in the grapheme PIN junction are easy to control, and the technology used is simple and easy to achieve. The prepared transverse grapheme PIN junction can be applied to preparation of a grapheme photoelectric detector and other functional devices and improves performance of the devices.

Description

technical field [0001] The invention belongs to the field of semiconductor devices and thin film crystal growth. Background technique [0002] Graphene is a new carbonaceous material with an ideal two-dimensional crystal structure, which is a two-dimensional honeycomb crystal closely packed by a single layer of carbon atoms. The transport of electrons in the graphene honeycomb structure satisfies the Dirac equation, the carriers have no rest mass, the movement speed is very high, and their conduction rate is 5×10 5 ms -1 , the carrier mobility is greater than 100,000 cm 2 V -1 the s -1 , is currently known as the material with the best electrical conductivity, and has great application potential in the field of microelectronics. For silicon-based circuits, doping is the basis for realizing various functional devices. For the application of graphene-based optoelectronic devices, such as photodetectors, the fabrication and precise control of graphene PIN junctions need ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/04
Inventor 冯志红蔚翠王俊龙李佳刘庆彬何泽召
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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