Growth method for improving hole concentration of carbon-doped gallium indium arsenide

A technology of gallium indium arsenide and hole concentration, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problems of difficult film growth, poor controllability, and low activation rate, and achieve controllable Effects of growth, ease of control, and ease of doping concentration

Pending Publication Date: 2022-03-25
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the disadvantages of C-doped InGaAs film growth difficulty, low activation rate, and poor controllability, the present invention invents a growth method for increasing the hole concentration of carbon-doped GaInGaAs

Method used

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  • Growth method for improving hole concentration of carbon-doped gallium indium arsenide

Examples

Experimental program
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Effect test

Embodiment 1

[0025] A growth method for increasing the hole concentration of carbon-doped gallium indium arsenide, using MBE technology for growth, such as figure 1 shown, including the following steps:

[0026] S1. Select an InP substrate, heat it to 350°C before growing, and bake for 30 minutes;

[0027] S2. Put the substrate into the growth chamber, and under the protection of P atmosphere, heat up to 520°C to remove the oxide film; quickly cool down to 480°C to grow an InP buffer layer of 500nm as the substrate 1, and then grow 0.47nm C-doped GaAs epitaxy Layer 2, where the doping concentration is 2E18cm -3 ;

[0028] S3. After growing the C-doped GaAs epitaxial layer 2, grow a 0.53nm non-doped InAs epitaxial layer 3 upward;

[0029] S4. Repeat step S3 and step S4 for a total of 10 cycles, grow 10nm in total, and drop to room temperature after the growth is completed; it is equivalent to growing a 10nm InGaAs extension layer on InP, wherein the first layer on InP is a C-doped GaAs e...

Embodiment 2

[0031] A growth method for increasing the hole concentration of carbon-doped gallium indium arsenide, using MBE technology for growth, comprising the following steps:

[0032] S1. Select an InP substrate, heat it to 350°C before growing, and bake for 30 minutes;

[0033] S2. Put the substrate into the growth chamber, and under the protection of P atmosphere, heat up to 520°C to remove the oxide film; quickly cool down to 480°C to grow an InP buffer layer of 500nm as the substrate 1, and then grow 0.3nm C-doped GaAs epitaxy Layer 2 with a concentration of 1E19cm -3 ;

[0034] S3. After growing the C-doped GaAs epitaxial layer 2, grow a 0.7nm non-doped InAs epitaxial layer 3;

[0035] S4. Repeat step S3 and step S4 for a total of 15 cycles, and grow 15nm in total; after the growth is completed, it is lowered to room temperature; it is equivalent to growing a 15nm InGaAs extension layer on InP, wherein the first layer on InP is a C-doped GaAs epitaxial layer 2. The uppermost l...

Embodiment 3

[0037] A growth method for increasing the hole concentration of carbon-doped gallium indium arsenide, using MBE technology for growth, such as figure 2 shown, including the following steps:

[0038] S1. Select an InP substrate, heat it to 350°C before growing, and bake for 30 minutes;

[0039] S2. Put the substrate into the growth chamber, and under the protection of P atmosphere, heat up to 520°C to remove the oxide film; rapidly cool down to 480°C to grow a 500nm InP buffer layer as the substrate 1, and then grow 0.47nm non-doped InAs epitaxy Layer 3;

[0040] S3. C-doped GaAs epitaxial layer 2 is grown upward with a thickness of 0.53nm, and the doping concentration is 2E18cm -3 ;

[0041] S4. Repeat step S2 and step S3 for a total of 10 cycles, and grow 10nm in total; after the growth is completed, drop to room temperature, which is equivalent to growing a 10nm InGaAs extension layer on InP, where the first layer on InP is a non-doped InAs epitaxial layer 3. The upperm...

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Abstract

The invention provides a growth method for improving the hole concentration of carbon-doped gallium indium arsenide. The growth method comprises the following steps: S1, preparing a substrate; s2, growing a first epitaxial layer upwards, wherein the first epitaxial layer is a C-doped GaAs epitaxial layer or a non-doped InAs epitaxial layer; s3, a second epitaxial layer grows upwards, and when the first epitaxial layer is a C-doped GaAs epitaxial layer, the second epitaxial layer is a non-doped InAs epitaxial layer; when the first epitaxial layer is a non-doped InAs epitaxial layer, the second epitaxial layer is a C-doped GaAs epitaxial layer; and S4, repeating the step S2 and the step S3 until the preset thickness is reached. Due to the fact that C occupies the As position more easily in GaAs to provide a hole, C only needs to be doped in the GaAs epitaxial layer and not doped in the InAs epitaxial layer in the doping control process, C can be prevented from occupying the In position, and the hole activation rate is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material epitaxial growth, and in particular relates to a growth method for increasing hole concentration of carbon-doped gallium indium arsenide. Background technique [0002] At present, indium gallium arsenide (InGaAs) materials are widely used in the preparation of various optoelectronic devices and high-frequency microelectronic devices such as light-emitting diodes, laser diodes, photodetectors, and heterojunction bipolar transistors. Before the manufacture of these devices, epitaxial growth is first required. During the epitaxial growth process, n-type or p-type doping is performed on the material to form a carrier layer, which provides carriers for the device or reduces the resistance of the device. [0003] In the epitaxial growth process, carbon (C) dopants are usually used as p-type doping of InGaAs to provide holes for the InGaAs film. C doping has the advantages of high solubil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02C23C16/30C23C16/44C30B25/02C30B29/40C30B29/42
CPCH01L21/02392H01L21/02463H01L21/02507H01L21/02546H01L21/0262C30B29/42C30B29/40C30B25/02C23C16/301C23C16/44
Inventor 高汉超
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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