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Novel avalanche-diode photoelectric detector and preparation method thereof

An avalanche diode, photodetector technology, applied in circuits, electrical components, semiconductor devices, etc., to achieve the effect of reducing potential barriers, improving absorption efficiency, and reducing production costs

Pending Publication Date: 2018-01-30
WUYI UNIV
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Problems solved by technology

However, most of the multiplication layers in the current APD are obtained by epitaxy, and the crystal quality needs to be further improved (usually the half-width of the X-ray Rocking Curve is greater than 150 arcsec, which is much larger than the 50 arcsec prepared by the pulling method) , in order to achieve a more ideal doubling effect

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  • Novel avalanche-diode photoelectric detector and preparation method thereof

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preparation example Construction

[0035] The preparation method of novel avalanche diode photodetector comprises the following steps:

[0036] 1) cleaning the single crystal substrate 13, removing the dirt particles and surface organic matter on the surface of the single crystal substrate 13, and drying it with a dryer;

[0037] 2) A metal multifunctional layer 14 with a thickness of 10-200 nm is epitaxially grown on the front surface of the single crystal substrate 13 by plasma enhanced chemical vapor deposition, molecular beam epitaxy or metal organic compound chemical vapor deposition, wherein the epitaxial growth temperature is 750-1150°C;

[0038] 3) An InGaAs absorbing layer 15 with a thickness of 1500-3000 nm is epitaxially grown on the metal multifunctional layer 14 by metal-organic compound chemical vapor deposition, wherein the epitaxial growth temperature is controlled at 900-1200° C.;

[0039] 4) epitaxially growing a P-type heavily doped InGaAs layer 16 with a thickness of 150-300 nm on the InGaA...

Embodiment 1

[0045] The preparation method of novel avalanche diode photodetector comprises the following steps:

[0046] 1) Clean the Si single crystal substrate with a standard cleaning process, remove the sticky particles and organic matter on the surface of the substrate, and dry it with a dryer;

[0047]2) Using MOCVD to epitaxially grow a layer of 20nm thick metal Al multifunctional layer on the front side of the Si single crystal substrate, the epitaxial growth temperature is 750°C;

[0048] 3) Using MOCVD to epitaxially grow a layer of 2000nm InGaAs absorption layer on the metal Al multifunctional layer, the growth temperature is controlled at 1050°C;

[0049] 4) Using MOCVD to epitaxially grow a layer of 300nm P-type heavily doped InGaAs on the InGaAs absorber layer, the growth temperature is controlled at 1050°C, and the doping element is Si;

[0050] 5) Use an ion implanter to uniformly implant ions on the back of the single crystal substrate, that is, the surface of the substr...

Embodiment 2

[0056] The preparation method of novel avalanche diode photodetector comprises the following steps:

[0057] 1) Clean the InP single crystal substrate with a standard cleaning process, remove the sticky particles and organic matter on the surface of the substrate, and dry it with a dryer;

[0058] 2) Using MOCVD to epitaxially grow a 20nm-thick metal Au multifunctional layer on the front side of the InP single crystal substrate, the epitaxial growth temperature is 750°C;

[0059] 3) Using MOCVD to epitaxially grow a layer of 2000nm InGaAs absorption layer on the metal Au multifunctional layer, the growth temperature is controlled at 1050°C;

[0060] 4) Using MOCVD to epitaxially grow a layer of 300nm P-type heavily doped InGaAs on the InGaAs absorber layer, the growth temperature is controlled at 1050°C, and the doping element is Si;

[0061] 5) Use an ion implanter to uniformly implant ions on the back of the single crystal substrate, that is, the surface of the substrate th...

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Abstract

The invention provides a novel avalanche-diode photoelectric detector comprising an N type electrode, an N type heavily doped layer, a single crystal substrate, a metal multifunctional layer, an InGaAs absorption layer, a P type heavily doped InGaAs layer and a P type electrode. The photoelectric detector has the wide application range. Controllable growth of the novel avalanche photo diode (APD)on various substrates is realized, the substrates are made of various materials, and the visible light APD and infrared APD are realized by replacing different substrates, so that the production costsare lowered. The single crystal substrate has good lattice integrity and lattice collisions are easy to occur, so that more avalanche electrons are excited and the efficiency of the APD is increased.The novel APD has the simple structure; the metal multifunctional layer plays a role in realizing epitaxy of the buffer layer, the charge control layer, and the reflective layer and reducing a barrier of entrance of electrons into a multiplication layer; and the reflective layer is able to reflect light that is not absorbed by the absorption layer completely to the absorption again, so that the absorption efficiency is improved.

Description

technical field [0001] The invention relates to an avalanche photodetector, in particular to an avalanche diode photodetector with a novel structure and a preparation method thereof. Background technique [0002] With the development and progress of society and technology, artificial intelligence and smart home have become the mainstream trend of social development, and the development of these technologies is inseparable from various advanced sensors. Photodetectors, as a crucial unit of sensors, have received extensive attention from researchers. [0003] Avalanche diode photodetectors (APDs) have the advantages of high internal gain, high quantum efficiency, and high sensitivity, and are currently one of the mainstream photodetectors. However, most of the multiplication layers in the current APD are obtained by epitaxy, and the crystal quality needs to be further improved (usually the half-width of the X-ray Rocking Curve is greater than 150 arcsec, which is much larger ...

Claims

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Application Information

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IPC IPC(8): H01L31/107H01L31/18
CPCY02P70/50
Inventor 杨为家刘均炎刘铭全刘俊杰沈耿哲何鑫曾庆光
Owner WUYI UNIV
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