Method for preparing p-type zinc oxide film through K-H co-doping

A zinc oxide film and zinc oxide powder technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of high film quality and low substrate temperature, and achieve controllable doping concentration , the effect of improving doping concentration and good electrical properties

Inactive Publication Date: 2012-12-26
HANGZHOU DIANZI UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The pulse laser deposition method has the advantages of high film quality, low substrate temperature, and easy consistency of target film composition. At present, there is no K-H co-doped by this method. p -ZnO film preparation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing p-type zinc oxide film through K-H co-doping

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 189 grams of ZnO powder and 1 gram of KOH powder with a purity of 99.99% were mixed in a ball mill for 9 hours, and 10 grams of polyvinyl alcohol with a purity of 99.99% were added during the ball milling process to form a precursor powder of 200 grams; the precursor powder Press molding, pre-sintering at 600°C for 1.5 hours, and then sintering at 1200°C for 3 hours to prepare a KOH-doped ZnO target; the prepared KOH-doped ZnO target and the surface-cleaned single crystal silicon substrate Put them into the vacuum chamber of the pulsed laser deposition device respectively, the distance between the target and the substrate is 8cm, and the vacuum degree in the vacuum chamber is 5×10 -4 Pa; heat the substrate to 500°C, and feed a mixed gas of argon and oxygen with a purity of 99.999% into the vacuum chamber, and the partial pressure ratio of oxygen in the mixed gas is 25%; turn on the laser source in the pulsed laser deposition device, and the laser The laser beam is hit o...

Embodiment 2

[0029] 196.9 grams of ZnO powder and 0.1 gram of KOH powder with a purity of 99.99% were mixed in a ball mill for 8 hours, and 3 grams of polyvinyl alcohol with a purity of 99.99% were added during the ball milling process to form a precursor powder of 100 grams; Press molding, pre-sintering at 500°C for 2 hours, and then sintering at 1000°C for 4 hours to obtain a KOH-doped ZnO target; the prepared KOH-doped ZnO target and the surface-cleaned single crystal silicon substrate Put them into the vacuum chamber of the pulsed laser deposition device respectively, the distance between the target and the substrate is 6cm, and the vacuum degree in the vacuum chamber is 10 -4 Pa; heat the substrate to 400°C, and feed a mixed gas of argon and oxygen with a purity of 99.999% into the vacuum chamber, and the partial pressure ratio of oxygen in the mixed gas is 10%; turn on the laser source in the pulsed laser deposition device, and the laser The laser beam is hit on the target for film g...

Embodiment 3

[0032] 267 grams of ZnO powder and 3 grams of KOH powder with a purity of 99.995% were mixed in a ball mill for 10 hours, and 30 grams of polyvinyl alcohol with a purity of 99.99% were added during the ball milling process to form a precursor powder of 300 grams; Compression molding, pre-sintering at 800°C for 1 hour, and then sintering at 1300°C for 2 hours to obtain a KOH-doped ZnO target; the prepared KOH-doped ZnO target and the surface-cleaned single crystal sapphire polished sheet The substrates were respectively placed in the vacuum chamber of the pulsed laser deposition device, the distance between the target and the substrate was 10 cm, and the vacuum degree in the vacuum chamber was 10 -3 Pa; heat the substrate to 600°C, and pass a mixture of argon and oxygen with a purity of 99.9995% into the vacuum chamber, and the partial pressure ratio of oxygen in the mixture is 40%; turn on the laser source in the pulsed laser deposition device, and the laser The laser beam is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for preparing a p-type zinc oxide film through K-H co-doping. At present, the preparation of a K-H co-doped p-ZnO film is not performed by using a pulse laser deposition method. The method provided by the invention comprises the following steps of: firstly, performing ball-mill mixing on potassium hydroxide powder, zinc oxide powder and a caking agent in a ball mill to obtain precursor powder; secondly, performing press forming on the precursor powder, and sintering the precursor powder to obtain a potassium hydroxide doped zinc oxide target material; thirdly, putting the target material and a substrate into a vacuum chamber of a pulse laser deposition device respectively, heating the substrate, introducing a mixed gas of argon and oxygen into the vacuum chamber, and starting a laser source in the pulse laser deposition device to shoot laser beams to the target material so as to grow a film; and finally, when the film grows to the required thickness, turning off the laser source, and performing in situ annealing under an oxygen protected atmosphere. According to the method provided by the invention, the doping concentration is high and is controllable at the same time, gap filling defects can be overcome, and the prepared p-type ZnO film has high electrical properties, repeatability and stability.

Description

technical field [0001] The present invention relates to a p The preparation method of type oxide type thin film, especially the method for preparing zinc oxide thin film by K-H co-doping, belongs to the technical field of semiconductor optoelectronic thin film materials and devices. Background technique [0002] Zinc oxide (ZnO) has almost all the excellent properties required for short-wavelength optoelectronic materials at room temperature, especially the exciton binding energy up to 60meV, so it has great application potential in the field of ultraviolet / near-ultraviolet short-wavelength optoelectronic devices. At present, the biggest obstacle affecting the role of ZnO in the field of devices is its p The type doping problem has not been completely resolved. In recent years about p The selection of dopants mainly focuses on group VA elements, but the solid solubility of group VA elements in ZnO is low, and the ionization of acceptor impurities is difficult after doping...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/28C23C14/58
Inventor 武军秦会斌郑梁徐军明郑鹏
Owner HANGZHOU DIANZI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap