404results about How to "Avoid process problems" patented technology

The invention relates to an aluminum alloy which comprises an aluminum alloy matrix and a micro-arc oxide ceramic membrane formed on the surface of the matrix, wherein the ceramic membrane comprises a bottom transition layer, a middle compact layer and a surface compact layer. The preparation method of the aluminum alloy, which is used for forming the micro-arc oxide ceramic membrane without a loose layer on the surface of the aluminum alloy, comprises the following steps: putting the aluminum alloy matrix in an oxidation tank containing electrolyte; carrying out initial oxidation treatment for the aluminum alloy matrix by adopting constant current; and continuously applying oxidation treatment to the aluminum alloy matrix by adopting positive and negative bidirectional pulse voltage, wherein positive and negative voltage keeps constant after rising to the maximum value, wherein the maximum constant positive voltage is 450V-650V, the maximum constant negative voltage is 30V-200V, the width of positive and negative pulse is 1000-10000mus, the pulse interval is 300-2000mus, the continuous oxidation treatment time is 30-180min, and the treatment temperature is between 20 DEG C and 50DEG C.

The invention relates to a semiconductor device. The device comprises a semiconductor substrate, a semiconductor drift region on the semiconductor substrate, a high-K dielectric on the semiconductor substrate, an active region on the semiconductor drift region and a trench gate structure on the high-K dielectric, wherein the semiconductor drift region comprises a first conduction type semiconductor region and a second conduction type semiconductor region which form a super-junction structure; the high-K dielectric is adjacent to the second conduction type semiconductor region; the trench gate structure is adjacent to the active region; and the second conduction type semiconductor region is formed through ion implantation at a small inclination angle, so that the semiconductor device is narrow and has high concentration.

The invention discloses a packaging substrate as well as a manufacturing method and a base material thereof. The manufacturing method of the packaging substrate comprises the following steps: two metal layers are mutually laminated, and a dielectric layer is utilized to clad the two metal layers; next, layer increasing line structures are respectively formed at the two sides of the dielectric layer; and finally, the layer increasing line structures at the two sides of the dielectric layer are separated along the interface of the two metal layers so that two packaging substrates are formed. In the invention, the adhesion characteristics of the dielectric layer is utilized so that the two metal layers in the middle cannot be separated in the course of forming the layer increasing line structures in the initial stage, and the dielectric layer part around the two metal layers is cut off to successfully separate the two metal layers so that the manufacturing process is simplified, and the two metal layers in the middle can form a line layer, a metal lug or a supporting structure through the pattering manufacturing process and have no waste.

This invention relates to a microbe ferment producing low-temperature cellulose method, which is to domesticate the microbe that produces cellulose gradually under low temperature, which makes the microbe grows better; culturing the domesticated cellulose under 10-16deg C by expanding gradually and then inoculating 3-9% cultured cellulose by ferment liquid volume in the liquid ferment culture medium, when culturing for 72-144h in 10-16deg C, that means the microbe ferment producing low-temperature cellulose is complete; the ferment liquid collects liquid in 4, 000-8, 000rpm by centrifugal separation, the collected liquid is the coarse enzyme liquid; According to the different users and demand, the coarse enzyme can be condensed, separated and purified to be prepared into the enzyme preparation with different activity and pure. '

The invention discloses SBS modified asphalt. The SBS modified asphalt is prepared with, by weight, 100 parts of matrix asphalt, 2.0-3.5 parts of SBS asphalt modifier, 1-2 parts of RET asphalt modifier, 0.2-0.5 part of polyphosphoric acid, 3-4 parts of compatilizer and 0.1-0.15 part of stabilizer. In addition, the invention further discloses a method for preparing the SBS modified asphalt. The method comprises the steps of 1, heating the matrix asphalt, adding the matrix asphalt into the compatilizer, stirring the mixture uniformly, and obtaining mixed materials; 2, adding the SBS asphalt modifier and the RET asphalt modifier into the mixed materials, stirring the mixture uniformly, conducting cutting, adding the stabilizer, continuing cutting, adding polyphosphoric acid, stirring the mixture uniformly, and obtaining the SBS modified asphalt. The SBS modified asphalt is chemical stabilization type SBS modified asphalt, great high temperature performance and anti-track performance are achieved, and the heat stability of the SBS modified asphalt is superior to that of traditional SBS modified asphalt.

The invention belongs to the fields of new materials and micro-electronics, and particularly relates to a low-temperature solution preparation method of a high-dielectric zirconium oxide thin film. The method comprises the following steps: weighing soluble zirconium salt and measuring a solvent to prepare a zirconium oxide precursor solution with the concentration of 0.01 to 0.5 mole / liter, and performing magnetic stirring and ultrasonic dispersion for 0.1 to 3 hours to form a clarified zirconium oxide precursor solution; preparing a zirconium oxide thin film: coating a cleaned substrate with the zirconium oxide precursor solution to form a zirconium oxide precursor thin film, performing preheating treatment at 50 to 150 DEG C, then performing light wave annealing at certain power and temperature for certain time, coating the zirconium oxide precursor solution for multiple times according to the requirement on the thickness of the zirconium oxide thin film, and annealing to obtain the zirconium oxide dielectric thin film. The zirconium oxide thin film obtained by the method disclosed by the invention is high in dielectric property, and has important application prospect in the micro-electronics field of transistors, capacitors and the like. By means of the process, the conventional high-temperature solution process, the long process cycle or expensive equipment and the like can be avoided; the method is low in cost and suitable for industrial large-scale production.

The invention relates to a production process of zinc oxide by the ammonia water circulation method, which comprises eight procedures of (1) sulfuric acid leaching; (2) removing iron and manganese byoxidation; (3) removing heavy metals by replacement; (4) synthesizing basic zinc carbonate; (5) filtering and drying; (6) calcining and smashing; (7) treating waste liquid of ammonium sulfate; and (8)absorbing ammonia gas, wherein, the treatment of the waste liquid of the ammonium sulfate (7) comprises the steps of adding calcium hydroxide in the waste liquid of the ammonium sulfate, the ammoniagas produced by reaction is introduced into the ammonia gas absorption procedure (8) for generating ammonia water, introducing carbon dioxide into the ammonia water, then returning to the synthesis procedure (4) and continuing the reaction with solution of zinc sulfate, thereby realizing circulation and reutilization of the ammonia water. The production process can avoid the process of concentration and crystallization or heating and steaming of ammonia, be characterized by simple and easy process and low production cost, simultaneously avoid the production of a large number of byproducts of the ammonium sulfate, have no emission of waste water and reduce environmental pollution.

The invention discloses a method for producing low-temperature phytase by fermenting microorganisms. The method comprises the steps of: performing low-temperature domestication on microorganisms producing phytase step by step to ensure that the microorganisms grow well in low-temperature environment; performing amplification culture on phytase-producing bacteria obtained after low-temperature domestication step by step at a temperature of between 12 and 18 DEG C, inoculating into a liquid fermentation culture medium according to the inoculation amount which is 4 to 10 percent of the volume offermentation liquor, and culturing for 72 to 144h at a temperature of between 12 and 18 DEG C, namely finishing the production of the low-temperature phytase by fermenting the microorganisms; centrifuging the fermentation liquor at a rotating speed of between 6,000 and 10,000rpm to collect liquid, wherein the collected liquid is crude enzyme fluid; and further concentrating, separating and purifying the crude enzyme fluid according to different needs and different using objects to obtain enzyme preparations with different activities, purities and formulations.

The invention relates to the field of tea preparation and particularly relates to a process method for baking angilica keiskei koidzumi. According to the process method, an angilica keiskei koidzumi baking technical method, comprising the steps of baking at low temperature, adding jasmine flowers and producing fragrance at high temperature, is established, the steps of a preparation process are simple, the loss of chalcone and vitamin C in angilica keiskei koidzumi during preparation is reduced, and the content of chalcone and vitamin C is obviously higher than that of tea products which are prepared by only frying leaves under conventional process conditions, so that the nutritional healthcare effects of angilica keiskei koidzumi are guaranteed; according to the prepared angilica keiskei koidzumi product, baking and frying processes are replaced with low-temperature baking, so that the tea is uniform in heated degree and good in sensory character, and the problem of charring due to excessive baking and frying is effectively solved; due to the two steps of adding jasmine flowers and producing fragrance at high temperature, the fragrance of angilica keiskei koidzumi is guaranteed.