The invention relates to a method for manufacturing a low-power dissipation avalanche thyristor chip through open pipe daubing resource perfect diffusion. The method comprises the steps of (1) technological environment preparation, (2) ultrasonic cleaning, (3) silicon wafer cleaning, (4) quartz frame and quartz lead cleaning, (5) silicon wafer boron-aluminum diffusion, (6) oxidation, (7) primary photoetching, (8) phosphorus diffusion, (9) circle cutting, (10) sintering, (11) secondary photoetching and evaporation once forming, (12) alloying, (13) table face processing, and (14) testing. Compared with the prior art, the method has the advantages that boron-aluminum primary diffusion is adopted, so that PN junction leading edge smoothness and product uniformity are ensured; the secondary photoetching and evaporation once forming technology is adopted, the working procedures are simplified, the physical damage is reduced, and the rate of finished products and the product performance reliability are improved; operation is carried out in the ultra-clean technological environment, and the long minority carrier lifetime is ensured due to a special cleaning way and a high-quality cleaning reagent; it is ensured that sintering deformation is small due to the novel sintering technology, bonding is firm, and it is ensured that diffusion parameters are stable and unchangeable.