173results about How to "Reduce process cost" patented technology

The invention discloses a semiconductor fingerprint identification sensor and a manufacture method thereof. The semiconductor fingerprint identification sensor comprises an induction area, a control area and an interface area, wherein the induction area, the control area and the interface area are in communication connection; fingerprint information induced by the induction area is sent to the control area; after the fingerprint information is processed by the control area, the processed fingerprint information is output through the interface area; the induction area comprises an insulation layer, a routing layer, a substrate layer and a protection layer, wherein the insulation layer, the routing layer, the substrate layer and the protection layer are fixed in sequence; the routing layer is embedded between the insulation layer and the substrate layer; one surface, which contacts with the protection layer, on the substrate layer, is provided with sensor arrays; through holes corresponding to the sensor arrays are arranged on the substrate layer; and the sensor arrays are electrically connected with a sensing lead wire circuit of the routing layer through the through holes. The invention has the advantages of being low in cost, high in signal to noise ratio, high in reliability and simple in processing technology.

Provided is a preparation method of a high-entropyAlCoNiCrFeMo alloy coating. The high-entropy AlCoNiCrFeMo alloy coating comprises the components in atomic percent of 100% Al, 100% Co, 100% Cr, 100% Fe, 100% Ni, and 10% Mo. The preparation method comprises the following steps: 1, blending; 2, smelting a mother alloy; 3, preparing an alloy electrode; 4, preparing a substrate; and 5, preparing the high-entropy alloy coating. The alloy coating prepared according to the preparation method provided by the invention is applied to surface deposition of a grinding tool to form a settled layer with high hardness, bonding strength, wear resistance and corrosion resistance on the surface of the grinding tool, or is applied to surface repairing of a worn workpiece, and belongs to the field of surface strengthening or surface modification.

The invention relates to an organic light emitting diode touch control display panel. The display panel comprises a thin film transistor array substrate, an OLED element and a touch control array. The touch control array comprises a first touch control line, a second touch control line and a touch control sensing electrode, wherein the first touch control line is extended along a first direction and is disposed in the same layer with a gate line; the second touch control line is extended along a second direction, is intersected with the first touch control line and is disposed in the same layer with a data line; and the touch control sensing electrode is disposed in the same layer with a lower electrode of the OLED element, is spaced from the lower electrode and is electrically connected with a touch control sensing electrode line via a contact hole in a planarization layer. The organic light emitting diode touch control display panel has a good display effect and / or good touch control detection precision.

A preparation method for a CBN (Cubic Boron Nitride) coated cutter based a on micrometer / nanometer diamond transition layer comprises the main steps as follows: pretreating a hard alloy substrate; pretreating tantalum wires; putting the substrate into heat wire method chemical vapor deposition equipment, and respectively depositing micrometer diamond and nanometer diamond by changing technological parameters; placing a deposited film in radio-frequency magnetron sputtering equipment and conducting pre-sputtering treatment on the film through Ar ions; and depositing a CBN coating in Ar and N2 gas atmosphere by taking hBN as a target material and the micrometer / nanometer diamond as a transition layer. The invention has the advantages that the technology and the equipment are simple, the operation is easier, and the combination of a coating and the substrate is improved remarkably.

The invention discloses a circulating production process for preparing hydrogen fluoride by utilizing fluorosilicic acid. The circulating production process comprises the following steps: 1) mixing the fluorosilicic acid with alkaline-earth metal fluoride or alkaline metal fluoride to react to obtain a mixed solution of the fluorosilicic acid and fluorosilicate; 2) distilling the mixed solution obtained by the step 1) and collecting hydrogen fluoride gas to obtain a fluorosilicate solid; 3) heating and decomposing the fluorosilicate solid to obtain a fluoride solid and silicon tetrafluoride gas; absorbing the silicon tetrafluoride gas with a fluorosilicic acid solution and filtering to obtain the fluorosilicic acid solution with increased concentration and silica gel sediment, so that one production period is finished; 4) taking the fluorosilicic acid solution obtained by the step 3) and the fluoride solid to react according to step 1) to step 3). According to the process disclosed by the invention, metal fluoride is actually not consumed, and only needs to be added at the initial stage of the process; the fluoride can be circularly utilized and only the fluorosilicic acid raw material and water are consumed; the process has low cost, a byproduct only contains silica gel and the yield of the hydrogen fluoride reaches 98.8 percent or more.

The invention discloses a preparation method of a flexible super-hydrophobic and super-oleophobic structure. The preparation method comprises the following steps of: (1) manufacturing a bottom layer of the flexible super-hydrophobic and super-oleophobic structure: rotatably coating a layer of negative photoresist on a substrate and carrying out exposure without using a mask; (2) rotatably coating a layer of negative photoresist on the negative photoresist after exposure of the step (1), and carrying out exposure by utilizing an array graphic mask; (3) carrying out second-time exposure on the photoresist of a structural layer: adopting the mask corresponding to the step (2) to carry out etching exposure; (4) developing: carrying out development on the structure after exposure in the step; (5) plating a protective layer film: forming a layer of protective film on the surface of the structure obtained in the step (4); (6) peeling: peeling the structure obtained after treatment of the step (5) from the substrate and obtaining the flexible super-hydrophobic and super-oleophobic structure. The preparation method disclosed by the invention is simple in process and low in cost, and has great promotion action for popularization and application of the flexible super-hydrophobic and super-oleophobic structure.

The invention relates to the manufacturing technology of polycrystalline silicon solar cells, in particular to a method for manufacturing a solar cell with local back surface field passivation. The method comprises the sequential steps of flock making, polishing, back face film coating, forming PN junctions on the front face, back face laser holing or grooving, rear cleaning, front face film coating, silk-screen printing and sintering, and solar cell making. The method for manufacturing the solar cell with the local back surface filed passivation is simple in process step, low in manufacturing cost, and good in product quality.

The invention relates to a high-efficient antistatic master batch used for BOPP membranes and a production process thereof, aiming at solving the problems of the prior art that various other functional promoters should be added, the process is complex, the process cost is high, the antistatic agent content in the master batch is low, the amount of added membrane is high, the membrane fabrication cost is increased and the antistatic effect is not ideal. The invention adopts the technical proposal that: the master batch comprises the components with the following content (weight portions): 62 to 70 portions of polypropylene and 30 to 38 portions of antistatic agent; the antistatic agent can use the complexing agent of non-ionic glycerin fatty acid ester, non-ionic ethoxyamine and semi-ionic borate derivatives. The production process uses a precision system for batching; the antistatic agent and the polypropylene are mixed and then extruded by a double screw extruder with the extruder temperature being 215 to 225 DEG C, the electric current being 440 to 460mA, the revolution being 420 to 430r / min, the die pressure being 18 to 20MPa / h and the melt temperature being 220 to 230 DEG C; the melt is extruded, dried, cooled and granulated and then the master batch is made.

The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a 3D NAND flash memory. The method comprises the steps that firstly, different stairs are made on the part where steps are opened through 1+log2N levels of light covers and the etching technology to form differences; then, 2N stairs are etched at a time through 1 level of a light cover or PR trimming and etching. Thus, the technological steps are reduced, and meanwhile technological cost is reduced.

The invention discloses a liquefied natural gas receiving station evaporation gas direct output process. Based on a traditional BOG direct output process, LNG is pressurized; the pressurized LNG is gasified to enter a turbine expander for doing work by expansion; the part of power is used for driving a BOG compressor and an LNG high-pressure pump; and meanwhile, medium / high-pressure natural gas and high-pressure natural gas are output outwards. The method can fully use cold energy generated in the vaporization process of high-pressure liquefied natural gas to reduce total energy consumption of a receiving station.

The invention relates to a diamond salt fusing and tungsten plating method. The diamond salt fusing and tungsten plating method is characterized in that after greasy dirt on the surface of a diamond is removed through ultrasonic cleaning in acetone, the diamond is ultrasonically cleaned through alcohol and dried; and then the cleaned diamond, tungsten-containing ammonium salt and salt fusing salt are mixed according to a certain proportion and subjected to ball milling, powder obtained after ball milling is placed in an alumina crucible to be subjected to high-temperature treatment, the treatment temperature ranges from 900 DEG C to 1,200 DEG C, the insulating time ranges from 0.5 h to 4 h, and then cooling is achieved along with a furnace. The powder obtained after high temperature treatment is further ground, salt is removed through multiple times of ultrasonic vibrating and distilled water boiling, and then the tungsten-plated diamond is obtained. The surface of the tungsten-plated diamond prepared through the method contains WC and W, a plating layer is even, the comprehensive mechanical performance is good, the binding force is high after the tungsten-plated diamond and metal powder are sintered, and the tungsten-plated diamond is suitable for preparing various diamond cutting and grinding tools.

The invention discloses a preparation method of a polyamide polyether organosilicone ternary polymerization type hydrophilic finishing agent, and belongs to the technical field of textile and chemical industry. The preparation method comprises the steps that hexamethylenediamine, adipic acid, double-end carboxyl polyethylene glycol and double-end amino polyether silicone oil are matched and mixed to be uniform according to the amount of substance, nitrogen protection is introduced in, the temperature is slowly increased for a reaction, phosphorous acid and a manganese dioxide solid body are added, and the temperature is increased for normal-pressure condensation polymerization; a sodium chloride solid body with the same mass as the phosphorous acid is added, slow stirring, cooling and standing layering are carried out, then, a water layer is removed, and the polyamide polyether organosilicone ternary polymerization type hydrophilic finishing agent is obtained. On the basis of the prior art, the reaction condition is optimized, and the manganese dioxide solid body is added as the catalyst for condensation polymerization, so that the reaction is carried out at normal pressure, and industrial production is facilitated; meanwhile, the prepared finishing agent has the good hydrophilic finishing effect on fabric, has the good improvement on the fabric soft hand feel, antistatic property and washing resistance, and is high in economic benefit.

The invention discloses thin-layer antirust oil. The oil contains 65-67wt% of lightweight refined oil, 9-11wt% of antirust compounding agent 1, 9-11wt% of antirust compounding agent 2, 10-14wt% of antirust compounding agent 3, 0.02-0.08wt% of antirust compounding agent 4, 0.06-0.1wt% of stearic acid, 0.4-0.6wt% of antioxidation compounding agent and 0.8-1.2wt% of surfactant. A preparation method of the thin-layer antirust oil comprises the following steps: adding the lightweight refined oil to a reactor and stirring the lightweight refined oil; adding the antirust compounding agent 1, the antirust compounding agent 2 and the antirust compounding agent 3 to the reactor in sequence and continuously stirring the mixture for 25-35 minutes; then adding the stearic acid, the antioxidant and theantirust compounding agent 4 to the reactor in sequence and continuously stirring the mixture for 25-35 minutes; and then adding the surfactant to the reactor and continuously stirring the mixture for 80-120 minutes, thus obtaining the thin-layer antirust oil. The thin-layer antirust oil has the following advantages: the production process of the antirust oil is simple; the antirust oil is non-toxic and harmless, has excellent moisture and heat resistance and salt mist resistance and can be sprayed, brushed or dipped on the parts; and the antirust oil has thin coating, so the parts with the antirust oil can be assembled without cleaning the antirust oil.

The invention relates to a method for preparing aniline-2-sulfonic acid, in particular to a method for preparing aniline-2-sulfonic acid through aniline catalysis and sulfonation. With metal hydrogen sulfate serving as a catalyst, aniline is directly catalyzed and sulfonated to prepare aniline-2-sulfonic acid in a transposition mode. According to the method, aniline is directly catalyzed and sulfonated to prepare aniline-2-sulfonic acid in the transposition mode, so that aniline-2-sulfonic acid is prepared from aniline through a one-step method, and the total yield of aniline-2-sulfonic acid reaches 95% or above; the process route is short, the quantity of the three wastes is small, and the cost is low.

The invention discloses a three-dimensional grid core material woven fabric. The three-dimensional grid core material woven fabric is composed of a first face layer fabric, a second face layer fabric and a core layer, wherein the first face layer fabric and the second face layer fabric are woven through weft and warp made of inorganic nonmetallic materials, and the core layer is used for connecting the first face layer fabric and the second face layer fabric. The low-density weft and warp of the first face layer fabric are interwoven in a tabby structure mode, a plurality of pieces of warp in adjacent sections are tied respectively to form stranding warp through wrap-directional filaments in a twisted-woven mode, and therefore the first face layer fabric which is of a continuous mesh grating-shaped structure is formed. Core layer filaments are distributed in a continuous V-shaped structure mode in the warp direction and are continuously and alternately distributed in an I-shaped or V-shaped mode in the weft direction, corresponding warp and weft of the first face layer fabric and the second face layer fabric are vertically connected at intervals, and the three-dimensional grid core material woven fabric is formed. The three-dimensional grid core material woven fabric has the advantages that the structure is advanced and reasonable, when used as core materials for manufacturing light building members, the three-dimensional grid core material woven fabric is good in compatibility for foaming cement or gypsum or other else, pouring is convenient, tamping is easy, and the strength of a produced product is high.

Embedded memories. The devices include a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, and a plurality of capacitors. The substrate comprises transistors. The first dielectric layer, embedding first and second conductive plugs electrically connecting the transistors therein, overlies the substrate. The second dielectric layer, comprising a plurality of capacitor openings exposing the first conductive plugs, overlies the first dielectric layer. The capacitors comprise a plurality of bottom plates, respectively disposed in the capacitor openings, electrically connecting the first conductive plugs, a plurality of capacitor dielectric layers respectively overlying the bottom plates, and a top plate, comprising a top plate opening, overlying the capacitor dielectric layers. The top plate opening exposes the second dielectric layer, and the top plate is shared by the capacitors.

The invention provides a preparation method and an energy storage material of multiple conductive ceramic materials with layered structures. The method includes the steps: directly forming raw material mixture according to stoichiometric ratio; performing reaction on the raw material mixture in molten salt in inert atmosphere, and cooling the raw material mixture after reaction to obtain product mixture; removing the molten salt in the product mixture to obtain the multiple conductive ceramic materials with the layered structures. The structural formula of the multiple conductive ceramic materials is (M1-xYx)n+1ACn, wherein n=1, 2 or 3, 0<=x<=1, M and Y are transition metal elements, A is IIIA or IVA element with atomic number above 13, and C is carbon. The preparation method can solve oneor more of the problems of high synthesis temperature, complicated preparation technology and equipment, high cost and the like of existing multiple conductive ceramic materials. Moreover, the preparation method has the advantages of rapidness, high efficiency, energy conservation, environmental protection, low cost, easiness in implementation of large-scale production and the like.

The invention provides a composite silver wire, which contains gold, palladium, and silver. The content of gold is greater than or equal to 4 wt % and less than 8 wt %. The content of palladium ranges from 2 wt % to 4 wt %. Therefore, the composite silver wire is excellent in general workability, high-temperature resistance and high-moisture resistance, and low in cost.

The invention relates to the technical field of displaying and provides a color filter and a preparation method thereof, as well as a liquid crystal display device. According to the invention, the color filter comprises a substrate, a black matrix layer, a color filter layer, a flattened conductive layer and a spacer, wherein the flattened conductive layer is formed by laminar di-hydroxyl hydroxide stripping liquid. According to the invention, in the color filter, a flat protective layer and a conductive layer of the traditional color filter layer are replaced with the flattened conductive layer. According to the invention, in the preparation process of the color filter, a conductive layer forming process and a flat protective layer forming process are combined into a one-step process, so that the technical cost of the sputtering conductive layer is reduced; moreover, as the laminar di-hydroxyl hydroxide stripping liquid is used as the flattened conductive layer, the material cost is reduced, which greatly reduces the cost.

The invention belongs to the technical field of electroplating of plastic parts, and in particular relates to a nickel-free environmental protection electroplating process. The nickel-free environmental protection electroplating process of the present invention adopts nickel-free environmental protection electroplating, which reduces the toxicity of nickel to the human body; the processing process is simple and easy to implement, the process cost is low, the process flow is shortened and simplified, the processing time is short, and the production efficiency is high; pre-treatment Using plasma treatment, carbonyl, carboxyl, hydroxyl and other hydrophilic groups are formed on the surface of plastic structural parts, which can effectively roughen the surface of plastic structural parts and reduce the cumbersome process of conventional wet pretreatment; the conditions are mild and will not affect the plastic structural parts The structure and performance are affected; the palladium-free sensitizing solution and activation solution are used to replace the traditional colloidal palladium activation process, which avoids pollution while saving man-hours and reducing process costs; the metal coating is uniform and dense, with good stability; the process is low-toxic and environmentally friendly. Will not produce toxic carcinogenic and environmental pollution substances.

The invention discloses an improved hierarchical clustering method for sewage abnormity detection. The invention provides an improved hierarchical clustering method applied to automatic monitoring ofsewage abnormity detection. According to the method, the terminal condition is judged through an LDA information gain algorithm in combination with a grid clustering idea in machine learning, so thathigh efficiency and accuracy of clustering are realized, an optimal clustering scheme of data is determined, and abnormity in sewage treatment is determined through judgment of a normal cluster and anabnormal cluster. In order to identify abnormal data in sewage treatment data, an improved hierarchical clustering algorithm based on grids is applied to detect data abnormity. According to the algorithm, grid clustering is used for data preprocessing, and an LDA algorithm is used for judging optimal clustering. Through combination of grid clustering, the overall clustering efficiency is improved; meanwhile, the accuracy degree of the whole clustering process is guaranteed through cohesion type hierarchical clustering, an LDA-based information gain algorithm serves as a clustering terminationcondition, and therefore the problem that the clustering effect is unstable in the hierarchical clustering algorithm is well solved, and the intra-class variance is minimum and the inter-class variance is maximum after projection.

The invention discloses a production method of potato noodles. The method comprises the following steps: taking raw materials; preparing a starchy paste; kneading the mixed powder; pumping air bubbles by using a vacuum machine; leaking noodles and molding; boiling the noodles and pasting; putting the rows of noodles on racks; naturally aging; freezing and aging; defreezing and drying; weighing and packaging; and entering a warehouse. By adding wheat germ powder, mushroom and other raw materials with high nutritive values into the potato noodles in a reasonable matching manner, the produced potato noodles are high in nutritive values, low in process cost, short in production period and simple in production process, thereby being easy to popularize.

The invention discloses a millesimal fine adjustment tool rest, which is characterized in that the cutter locations at all directions of the tool rest have independent functions of adjustment and tool setting, the reading value precision per division is 0.0005mm, and the travel route is 0-8mm. The cutter locations rotate around a middle rotary mechanism together to change positions, thus being capable of being located on arbitrary angles. The interface in the middle of the tool rest is matched with a mechanical indexing mechanism and an electrodynamic type indexing mechanism of an ordinary universal lathe. A mechanical indexing mechanism of an ordinary universal lathe tool rest is installed in the interface to form a mechanical manual millesimal fine adjustment tool rest. An electrodynamic indexing mechanism is installed in the interface to form an electrodynamic indexing millesimal fine adjustment tool rest.

The embodiment of the invention provides a fabrication method of a low-temperature poly-silicon thin film transistor. The fabrication method comprises the steps of providing a substrate, wherein a poly-silicon layer is formed on the substrate and comprises a first region, a second region and a third region; coating photoresist on the first region and the second region, and performing exposure and first developing to form a photoresist layer; performing a first doping process by taking the photoresist layer as shading so as to form a heavy-doping region on the third region; performing second developing on the photoresist layer so that the second region is exposed; and performing a second doping process by taking the photoresist layer after the second developing as shading so as to form a light doping region on the second region. By the method, a process of yellow light and photoresist stripping can be omitted, and the process cost is reduced.

The invention belongs to the technical field of mineral metallurgy, and concretely discloses a leaching method for recovering copper from malachite copper oxide ores. The method is characterized in that an organic acid trichloroacetic acid solution is used as a leaching agent to leach copper from the copper oxide ores, the leaching temperature is 20-60DEG C, copper oxide ores with the granularity of below 38[mu]m account for 75-95% of the weight of the copper oxide ores, a certain concentration of the trichloroacetic acid solution is mixed with copper oxide ore powder according to a liquid / solid mass ratio of 5-20:1, and the obtained mixture is fully stirred for 30-60min to obtain a copper-containing solution suitable for later copper extraction and electrodeposition treatment. The leaching method uses the characteristics of simple preparation and high leaching rate of the leaching agent, reduces the environment pollution and facilitates the comprehensive utilization of resources by using trichloroacetic acid wastes generated in the pharmacy and chemical industry, guarantees the high copper leaching rate without high temperature or a pressurizing device, and also has the advantages of simple operation and low process cost.

The invention discloses a method for regulating the threshold voltage of a complementary metal oxide semiconductor. The method mainly comprises that the implantation dosage and the energy of P-type ions are determined according the threshold value VTP of P-type metal oxide semiconductor, and P-type ion common implantation is conducted to a silicon wafer with gate oxide layer according to the result of the determination; and the implantation dosage and the energy of N-type ions are determined according to the threshold voltage VTN of N-type metal oxide semiconductor, the implantation dosage and the energy of the P-type ions, and photoetching and N-type ion implantation are conducted to the silicon wafer underwent the P-type ion common implantation according to the result of the determination and a P-well photoglyphy used to conduct P-well photoetching to the silicon wafer. By adopting the technical scheme, the VTP and the VTN can be accurately adjusted and the technological cost is saved.

The invention relates to a horizontal directional solidification preparation method of a large-size Re:YAP series laser crystal, which is technologically characterized in that the Re:YAP laser crystal is grown by horizontal directional solidification crystallization under a vacuum condition. The specific growth process comprises six major steps of material melting, seeding, shouldering, equal-width growth, cooling and annealing. The method provided by the invention combines the advantages of a directional crystallization process and a vertical zone-melting process in growing crystals; and the prepared Re:YAP laser crystal has the advantages of higher quality, larger size, higher utilization rate, low defect density, better laser performance, non-doped ion core, low cost, low energy consumption and the like.

The invention discloses a method for processing a loquat leaf beverage, which comprises the steps of cleaning, disinsectization, sterilizing, rinsing, spreading and drying, water extracting, cooling and filtrating, blending, sterilizing and stocking. The processing method extracts the functional substances of the loquat leaf according to the characteristic that the loquat leaf is rich in compounds containing flavone, comparatively more inorganic salt, protein, glucide, amino acid needed by the human body and other nutrients, different edulcorants, antioxidants and complex densifiers are added to produce the beverage, which not only improves the added value of resources, but also increases the income of fruit growers and has remarkable economic benefits and social benefits. Fallen loquat leaves are usually taken as waste and burnt in loquat orchards, which not only wastes resources, but also pollutes the environment. The processing method takes the fallen loquat leaves as raw material, thereby utilizing waste effectively.