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2996results about How to "Reduce process steps" patented technology

Array substrate, irregularly-shaped display and display device

The invention discloses an array substrate, an irregularly-shaped display and a display device, and relates to the technical field of display. In the array substrate, a plurality of grid lines with unequal lengths are arranged on a display region, capacitance compensation structures are arranged on a non-display region and are in one-to-one corresponding to a part of the grid lines, each capacitance compensation structure comprises a first electrode, a second electrode and a third electrode which are arranged on a substrate, the first electrode and the second electrode form a first capacitor, the second electrode and the third electrode form a second capacitor, and a coupling capacitance value of the capacitance compensation structure is relevant to the length of the corresponding grid line. According to the technical scheme provided by the invention, the capacitance compensation structures are arranged on the non-display region of the array substrate, the coupling capacitance values of the capacitance compensation structures are relevant to the lengths of the corresponding grid lines, thus, the difference among coupling capacitance of the grid lines with different lengths on the display region is compensated, and the display image quality is improved.
Owner:SHANGHAI TIANMA MICRO ELECTRONICS CO LTD

Method for preparing solar cell by using local area back field

The invention discloses a method for preparing a solar cell by using a local area back field, which comprises the following steps of: selecting a silicon chip and making the silicon chip into a soft silicon chip, then performing boron or phosphorus dispersion, cleaning a boron-silicon glass layer or a phosphorus-silicon glass layer left on the surface of the silicon chip after the dispersion, depositing a silicon nitride film on the front of the silicon chip by using PECVD, polishing the back of the silicon chip by using hot alkali liquid, and depositing a passive film, performing laser perforation and sputtering an aluminum layer on the polished back; and finally, screen-printing a silver electrode on the front of the silicon chip, and sintering, testing and separating the silicon chip. The method avoids the problem of current leakage caused by lamination during etching; the PECVD process adopted by the passive film on the back is more suitable for large-scale production; the adoption of the back laser perforation improves the manufacturing speed, reduces the process step and avoids pollution brought by corrosive slurry; and the Al layer can be well sintered and contacted with the silicon through pores so that the contact area of the metal and the back surface silicon is smaller and the current carrier compounding rate of the back surface is reduced.
Owner:JA SOLAR TECH YANGZHOU

Method for preparing spherical aluminum-doped nickel lithium carbonate for lithium ion battery positive electrode material

ActiveCN102074679AMorphology and particle size distribution controllableGood liquidityCell electrodesLoop stabilityLithium electrode
The invention relates to a method for preparing spherical aluminum-doped nickel lithium carbonate for a lithium ion battery positive electrode material by combining liquid phase oxidation and crystallization controlling. Through controlling of the preparation technique, firstly synthesizing a spherical hydroxyl oxygenized nickel cobalt aluminum precursor with high density, and then calcining at the temperature of 500-800 DEG C for 10-24 hours in a flow oxygen gas atmosphere after mixing the precursor with a lithium source, thus acquire the spherical aluminum-doped nickel lithium carbonate with high density. The synthesized aluminum-doped nickel lithium carbonate is in a single spherical shape, has good stacking density, and can be used for improving the volume ratio capacity of a battery.The aluminum-doped nickel lithium carbonate prepared by the method in the invention has the advantages of high specific capacity and good loop stability. The method provided by the invention has the advantages of simple technique, low cost, less pollution, good product performance and suitability for industrialized production.
Owner:深圳市费特森新能源有限责任公司

Thin film transistor (TFT) array substrate and display device

InactiveCN102629056AReduce liquid crystal alignment disorder areaIncrease opening ratioSolid-state devicesNon-linear opticsInsulation layerDisplay device
The invention discloses a thin film transistor (TFT) array substrate, which comprises grid lines and data lines, the grid lines and the data lines are formed on the substrate. The grid lines and the data lines cross to define sub-pixel units. Each sub-pixel unit comprises a thin film transistor device, a public electrode, a first pixel electrode layer and a second pixel electrode layer. The first pixel electrode layers or the second pixel electrode layers are connected with public electrodes, and the other ones are connected with source electrodes or drain electrodes of the thin film transistors, the first pixel electrode layers and the second pixel electrode layers are separated through insulation layers, and the second pixel electrode layers are arranged above the first pixel electrode layers. Images of strip pixel electrodes of the second pixel electrode layers are overlapped with images of the first pixel electrode layers, an inclined angle is arranged between the strip pixel electrodes and liquid crystal initial orientation, and the grid lines are parallel to the strip pixel electrodes close to the grid lines or the data lines are parallel to the strip pixel electrodes close to the data lines. The TFT array substrate and the display device guarantee that a liquid crystal orientation chaos phenomenon caused by effects of disorder electric fields at a pixel edge can not occur.
Owner:BOE TECH GRP CO LTD +1

Liquid crystal display device with color film on thin-film transistor and its manufacture method

This invention discloses a sort of liquid crystal display that the chromatic film is above the thin film transistor, and it consists of the nether baseboard, the grating line, the grating pole, the thin film transistor is formed above the grating pole, the data wire, the power pole which connects with the data wire and the corresponding leakage pole are formed above the thin film transistor, the deactivation protective foil is formed above the channel of the thin film transistor, and it has the bore in the part which is corresponds to the leakage pole, the black matrix is formed above the deactivation protective foil, and it has the bore in that bore position, the hatch of the black matrix corresponds to the picture element area, the chromatic filter layer is formed in the hatch of the black matrix, a picture element pole is formed above the chromatic filter layer, and it connects with the leakage pole by the bore, the upper baseboard, the common pole which is formed above the nether baseboard, a liquid molecule layer is formed between the upper baseboard and the nether baseboard. This invention discloses the manufacturing method of this crystal display at the same time. This invention advances the penetrant rate and the hatch rate of the liquid crystal display, and it predigests the technique.
Owner:BEIJING BOE OPTOELECTRONCIS TECH CO LTD +1

Novel method for separating gold and silver from gold mud

The invention provides a novel method for separating gold and silver from gold slime, which comprises: wet gold slime is subjected to one-step chloridizing leaching and filtered; filtrate is a gold-containing solution, and filter cakes are silver chloride deposit; the gold-containing solution is reduced to obtain gold powder which is then smelted into gold ingots; and the filter cakes, namely the silver chloride deposit, are converted into coarse silver powder which are then smelted into silver ingots. The method adopts one-step chloridizing gold leaching reaction to overcome the defect of large metal loss due to long pretreatment flow of the gold slime and high frequency of filtration reaction in the prior art, only uses a hydrochloric acid and sodium chlorate during chloridizing and gold leaching, is easy to control the reaction, removes the process of pre-leaching the gold slime and removing impurities in the prior art, removes multi-step reduction, reduces the processing step, greatly reduces the discharge amount of wastewater, reduces the heating duration, saves the cost of water and electricity, and improves the recovery rate of the gold and the silver and the quality of the gold ingots and the silver ingots.
Owner:LINGBAO CITY JINYUAN MINING

Roller and producing technique

The invention relates to the field of steel rolling machinery, in particular to a roller and a production process for the roller which is made of W6Mo5Cr4V2 high speed steel; the production process comprises the following steps: a. material preparation; b. the processing of two end faces of blanks; c. the processing of central holes of two ends; d. the processing of rough turn; e. the drilling of hoisting holes outside the length of finished products; f. carrying out quenching and tempering treatment to cause the roller hardness to reach 40 to 50 HSD; g. the modification of the central holes of the two ends; h. the processing of half finish turning; i. coarse grinding of the roller body; j. carrying out quenching and tempering treatment to lead the surface of the roller body to reach the quenching hardness of 88 to 93 HSD; k. the processing of the lengths of the two ends to required sizes; l. the processing of finish turning; m. the coarse grinding of the roller body and a roller neck; n. stress relief treatment; o. the repairing of the central holes of the two ends; p. fine grinding of the roller body and the roller neck; q. super grinding of the roller body and the roller neck to finished products. The roller and the production process thereof solves the problem of big size, high production cost, tedious process and great production difficulty of rollers which are produced with conventional materials.
Owner:CHANGZHOU ECCO ROLLER

Method for preparing graphene oxide

ActiveCN103332670AReduce the introductionLower the activation energy of chemical reactionsCarbon compoundsStrong acidsEnergy expenditure
The invention discloses a method for preparing a graphene oxide. The graphene oxide is prepared from a graphite raw material in a mode that mechanical action and oxidation reaction are combined. The method comprises the following steps of: mixing an oxidant with the graphite raw material, subsequently preparing the graphene oxide by employing mechanical action, adding the oxidant after the graphite raw material is subjected to mechanical action so as to prepare the graphene oxide, and adding the oxidant after the graphite raw material is subjected to mechanical action so as to carry out oxidation reaction and prepare the graphene oxide. According to the method, strong acids and strong oxidants required in a chemical oxidation method are abandoned, so that the introduction of byproducts and impurities is greatly reduced, the separation and the purification are convenient, the process procedures are reduced, the treatment time of a mechanical milling method is shortened, the energy consumption is reduced, and the yield is greatly increased. With the combination of the two methods, the graphene oxide can be prepared at one step within the shortest time, the yield is greater than 20%, the graphite oxide can be stably suspended under a centrifugal condition of 16,000rpm without ultrasound, and the method has the characteristics of rapidness, simplicity, convenience, environmental-protection and efficiency.
Owner:CHONGQING JIAOTONG UNIVERSITY

Liquid crystal display device with thin-film transistor on color film and its manufacture method

This invention discloses a sort of liquid crystal display that the thin film is above the chromatic film, and it consists of the nether baseboard, the black matrix which is formed under the nether baseboard, the chromatic filter layer which is formed in the hatch of the black matrix and corresponds to the picture element area, the over protective film which is formed above the chromatic filter layer and the black matrix, the grating line and the grating pole which is formed above the over protective film, the thin film transistor which is formed in the grating pole, the data wire and the power pole and the leakage pole are formed above the thin film transistor, the deactivation protective layer which is formed above the area of the leakage and the other exceptant part of the picture element area, the picture element pole which is formed above the picture element area and the over protective film, and it contacts with the part of the leakage pole, the upper baseboard, the common electric pole which is formed above the upper baseboard, the liquid crystal molecular layer which is formed between the upper baseboard and the nether baseboard. This invention advances the penetrant rate and the hatch rate of the liquid crystal display, and it predigests the technique.
Owner:BEIJING BOE OPTOELECTRONCIS TECH CO LTD +1

Isothermal forming die of large-curvature titanium alloy covering part and forming method of isothermal forming die

The invention relates to an isothermal forming die of a large-curvature titanium alloy covering part. The structure of the isothermal forming die is as follows: a blank holder is arranged between a convex die and a concave die; the lower surface of the blank holder is matched with the molded surface of the convex die; the upper surface of the blank holder is matched with the molded surface of the lower surface of the concave die; the bottom surface of the blank holder is connected with the upper surface of the convex die through a push rod; a limiting groove is formed in the side face of the blank holder and is in sliding connection with the outer edge of a guide structure on the convex die; the upper surface of the blank holder fits the lower surface of the concave die; a guide plate is arranged at the lateral end of the concave die and is in sliding connection with an inner edge groove of the guide structure; a straight pin is arranged on the upper surface of the blank holder and is positioned in a limiting hole of the concave die. The isothermal forming die of the large-curvature titanium alloy covering part provides the effective die for preliminary isothermal forming steps and ensures the final forming of the large-curvature titanium alloy covering part; in addition, according to a forming method of the isothermal forming die, the processing steps of isothermal forming and superplastic forming are sequentially adopted, so that a formed hypocrateriform part is uniform in wall thickness and meets the technical requirements.
Owner:SHENYANG AIRCRAFT CORP

Liquid crystal display device

The embodiment of the invention discloses a liquid crystal device, and belongs to the technical field of display. The liquid crystal display device comprises an array substrate, a color filter substrate, a liquid crystal layer and frame glue, wherein the array substrate comprises a plurality of scanning lines in parallel, insulated layers arranged on the surfaces of the scanning lines, a plurality of parallel data lines arranged on the surfaces of the insulated layers, a plurality of pixel electrodes arranged on the surfaces of the insulated layers and distributed in a matrix, passivation layers covering the surfaces of the pixel electrodes and the surfaces of the data lines, and a plurality of first common electrodes which cover the surfaces of the passivation layers and are parallel with the data lines and crossed with the scanning lines; the color filter substrate comprises a black matrix, a color resistance layer, a flat layer and a second common electrode covering the surface of the flat layer, and the second common electrode is of a net-shaped structure, the net-shaped structure is a certain distance away from the data lines and the scanning lines in the vertical direction and the net-shaped structure is relatively overlapped with the data lines and the scanning lines. The penetration rate of the liquid crystal display device rises, and the response speed is improved.
Owner:KUSN INFOVISION OPTOELECTRONICS

Preparation method of lithium-nickel-cobalt-aluminum oxide for anode materials of lithium ion batteries

ActiveCN103066257ASolve the problem of complete oxidationPrevent "cation mixing" phenomenonCell electrodesLithium hydroxideOxygen
The invention provides a preparation method of lithium-nickel-cobalt-aluminum oxide for anode materials of lithium ion batteries. The method comprises: step 1, using a nickel-cobalt-aluminum precursor prepared through a coprecipitation method and doped with mixed ions as raw materials, putting the raw materials into a sealed hearth of a pressure furnace, continuously introducing oxygen until a fixed pressure value is formed, then heating to a pre-burning temperature and keeping warm for a period of time, and cooling to obtain an oxidized precursor; and step 2, adding measured lithium salt or lithium hydroxide into the oxidized precursor, ball milling and uniformly mixing; heating the uniformly mixed raw materials to a certain temperature and keeping warm for a period of time, and meanwhile continuously introducing oxygen to complete a sintering process, thereby obtaining the finish product. According to the invention, through a hyperbaric oxygen atmosphere, the oxygen are enabled to fully infiltrate into particles of the raw materials which has a certain accumulation thickness, thereby preventing situations that only surface materials are oxidized under a normal pressure, and ensuring a full conversion of Ni<2+> to Ni<3+> by a full pre-oxidation.
Owner:GUANGZHOU LIBODE NEW MATERIAL

Array substrate and manufacturing method thereof, and display device

The invention discloses an array substrate and a manufacturing method thereof, and a display device. Therefore, the process steps are reduced, so that the production cost is lowered and the production efficiency is improved. The array substrate includes a substrate base plate, thin-film transistors arranged on the substrate base plate, data lines connected with source electrodes / drain electrodes of all thin-film transistors, and a light shield layer arranged on the substrate base plate. The data lines and the light shield layer are arranged at the same layer. First via holes are formed above the data lines to expose parts of data lines. The thin-film transistors include semiconductor active layers and first transparent electrodes; second via holes are formed above the semiconductor active layers to expose parts of the semiconductor active layers; and the data lines and the semiconductor active layers are electrically connected by the first transparent electrodes through the first via holes and the second via holes.
Owner:SHANGHAI TIANMA MICRO ELECTRONICS CO LTD +1

Multi-layer flexible circuit board and fabrication method thereof

A multi-layer flexible circuit board comprises a plurality of conductive circuit layers and a plurality of insulation layers, wherein the insulation layer is arranged between adjacent conductive circuit layers, a plurality of first-order blind holes and a plurality of second-order blind holes are formed in the multi-layer flexible circuit board, the first-order blind holes are filled with first-order conductive posts, the second-order blind holes are filled with second-order conductive posts, the first-order conductive posts and the second-order conductive posts are matched to make the plurality of conductive circuit layers electrically connected, the plurality of conductive circuit layers comprise a first external conductive circuit layer, a second external conductive circuit layer and a plurality of internal conductive circuit layers, the plurality of second-order blind holes comprise a first second-order blind hole, the first second-order blind hole is filled with a first second-order conductive post, the plurality of internal conductive circuit layers comprise a first internal conductive circuit layer, a second internal conductive circuit layer and a third internal conductive circuit layer which are adjacent to one another, and the first internal conductive circuit layer, the second internal conductive circuit layer and the third internal conductive circuit layer are electrically connected by the first second-order conductive post. Moreover, the invention also provides a fabrication method of the multi-layer flexible circuit board.
Owner:AVARY HLDG (SHENZHEN) CO LTD +2
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