2185 results about "Melt temperature" patented technology

A medical implant of ultrahigh molecular weight polyethylene having an improved balance of wear properties and oxidation resistance is prepared by irradiating a preform of ultrahigh molecular weight polyethylene, annealing the irradiated preform in the absence of oxygen to a temperature at or above the onset of melting temperature, and forming an implant from the stabilized cross-linked polymer. Implants prepared according to the process of the present invention have comparable oxidation resistance and superior wear performance compared to unirradiated ultrahigh molecular weight polyethylene.

A novel densified fluoropolymer article is described which has a water vapor permeation of about 0.015 g-mm / m2 / day or less, and preferably has a matrix tensile strength of at least 10,000 psi in two orthogonal directions. The articles are made by compressing expanded porous PTFE at pressures, temperatures and times which result in elimination of the pores, and subsequent stretching above the crystalline melt temperature.

Embodiments of the invention include a method comprising disposing a thin metallic layer having a low melting temperature between one end of a conductive post on a substrate and a conducting structure on an opposing substrate. Heated platens in contact with the substrates can apply pressure and heat to the thin metallic layer and cause it to be entirely consumed and subsequently transformed into a bonding layer having a melting temperature higher than the melting temperature of the original thin metallic layer. Prior to, during, or after the conductive post is bonded to the conducting structure, the region around the conductive post and between the substrates may be filled with a dielectric material, such as polyimide.

A high density integrated circuit structure and method of making the same includes providing a first silicon substrate structure having semiconductor device formations in accordance with a first circuit implementation and metal interlevel lines disposed on a top surface thereof and a second silicon substrate structure having a second circuit implementation and metal interlevel lines disposed on a top surface thereof. The first substrate structure includes a planarized low-K dielectric disposed between the metal interlevel lines and a protective coating separating the metal interlevel lines from the low-K dielectric, the metal interlevel lines of the first silicon substrate structure have a melting temperature on the order of less than 500 DEG C. and the low-K dielectric having a dielectric K-value in the range of 2.0-3.8. The second substrate structure also includes a planarized low-K dielectric disposed between the metal interlevel lines and a protective coating separating the metal interlevel lines from the low-K dielectric, the metal interlevel lines having a melting temperature on the order of less than 500 DEG C. and the low-K dielectric having a dielectric K-value in the range of 2.0-3.8. Lastly, the first substrate structure is low temperature bonded to the second substrate structure at respective metal interlevel lines of the first and second substrate structures.

Special liquid droplet targets that are irradiated by a high power laser and are plasmarized to form a point source EUV, XUV and x-ray source. Various types of liquid droplet targets include metallic solutions, and nano-sized particles in solutions having a melting temperature lower than the melting temperature of some or all of the constituent metals, used a laser point source target droplets. The solutions have no damaging debris and can produce plasma emissions in the X-rays, XUV, and EUV(extreme ultra violet) spectral ranges of approximately 0.1 nm to approximately 100 nm, approximately 11.7 nm and 13 nm, approximately 0.5 nm to approximately 1.5 nm, and approximately 2.3 nm to approximately 4.5 nm. The second type of target consists of various types of liquids which contain as a miscible fluid various nano-size particles of different types of metals and non-metal materials.

Thermoplastic components may experience local damage, including cracks and decohesion of fiber reinforcements, among others. Such thermoplastics may be repaired by heating them to a suitable softening / melting temperature under pressure and maintaining them under pressure and at elevated temperature until the damage is healed. This may be done in-place using custom-fabricated, suitably-shaped die portions maintained under pressure by magnetic attraction. Various heating methods and die portion fabrication methods are described.

Fibers and nonwoven materials comprising polymeric blends and polymeric mixtures that incorporate a blend of a first metallocene polypropylene and a second polypropylene are described. The first and second polypropylenes have a predetermined relationship for the melt temperature and the melt flow rate of the individual polypropylenes. Also described are fibers (including bicomponent fibers) and nonwoven materials made from the fibers where the fibers are extruded using the polymeric blends, and / or the polymeric mixtures.