2185 results about "Melt temperature" patented technology

A medical implant of ultrahigh molecular weight polyethylene having an improved balance of wear properties and oxidation resistance is prepared by irradiating a preform of ultrahigh molecular weight polyethylene, annealing the irradiated preform in the absence of oxygen to a temperature at or above the onset of melting temperature, and forming an implant from the stabilized cross-linked polymer. Implants prepared according to the process of the present invention have comparable oxidation resistance and superior wear performance compared to unirradiated ultrahigh molecular weight polyethylene.

A novel densified fluoropolymer article is described which has a water vapor permeation of about 0.015 g-mm / m2 / day or less, and preferably has a matrix tensile strength of at least 10,000 psi in two orthogonal directions. The articles are made by compressing expanded porous PTFE at pressures, temperatures and times which result in elimination of the pores, and subsequent stretching above the crystalline melt temperature.

A high density integrated circuit structure and method of making the same includes providing a first silicon substrate structure having semiconductor device formations in accordance with a first circuit implementation and metal interlevel lines disposed on a top surface thereof and a second silicon substrate structure having a second circuit implementation and metal interlevel lines disposed on a top surface thereof. The first substrate structure includes a planarized low-K dielectric disposed between the metal interlevel lines and a protective coating separating the metal interlevel lines from the low-K dielectric, the metal interlevel lines of the first silicon substrate structure have a melting temperature on the order of less than 500 DEG C. and the low-K dielectric having a dielectric K-value in the range of 2.0-3.8. The second substrate structure also includes a planarized low-K dielectric disposed between the metal interlevel lines and a protective coating separating the metal interlevel lines from the low-K dielectric, the metal interlevel lines having a melting temperature on the order of less than 500 DEG C. and the low-K dielectric having a dielectric K-value in the range of 2.0-3.8. Lastly, the first substrate structure is low temperature bonded to the second substrate structure at respective metal interlevel lines of the first and second substrate structures.

Thermoplastic components may experience local damage, including cracks and decohesion of fiber reinforcements, among others. Such thermoplastics may be repaired by heating them to a suitable softening / melting temperature under pressure and maintaining them under pressure and at elevated temperature until the damage is healed. This may be done in-place using custom-fabricated, suitably-shaped die portions maintained under pressure by magnetic attraction. Various heating methods and die portion fabrication methods are described.