124results about How to "No defect" patented technology

It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.

The invention provides degradable isocyanate which can be used for preparing degradable polyurethane materials. On the other hand, the isocyanate is polymerized with epoxy resin to form polyurethane modified epoxy resin which can generate a degradable crosslinking polymer with a degradable curing agent. The degradable polyurethane material and the degradable crosslinking polymer can be degraded in a mixed system of an acid and a solvent under the heating and stirring condition. The invention further provides a composite material prepared from the degradable curing gent, the polyurethane modified epoxy resin, an auxiliary material and a reinforcing material as well as a composite material prepared from the degradable polyurethane, an auxiliary material and a reinforcing material. The composite material can be degraded in the mixed system of the acid and the solvent under the heating and stirring condition, and can be recycled after being neutralized. The composite material has excellent mechanical properties, and is suitable for different composite material application fields, and the degrading and recycling method is simple, economical, mild in condition and easy to control.

The invention discloses a composite conductive material of graphene film and metal nanometer structure; the composite conductive material of graphene film and metal nanometer structure comprises a metal nanometer structure and a graphene film which sticks onto the metal nanometer structure; the graphene film directly sticks onto the metal nanometer structure by chemical vapor deposition method or carbon segregation method; the layer number of the graphene film is 1-30 layers. The provided conductive material has mechanical flexibility and high conductivity as well as adjustable light transmission; meanwhile, the transparent material also has a characteristic of preventing the metal from being oxidized. The square resistance of the provided conductive material is 5Omega / to 1000Omega / , the transparency is 5%-97%, and the bending radius is less than 10mm. The invention also discloses a preparation method of the conductive material; the provided preparation method of the conductive material does not need to transfer the graphene film; the operation is simple without using an organic solvent; the conductive material and preparation method are green and environment-friendly, as well as saving cost.

The invention provides a preserving fluid and a preserving method for maintaining high cell activity of a tissue sample, wherein the preserving fluid comprises the components: ion buffer solution components, carbohydrate components,, components avoiding the generation of ice crystals in and out solutions of tissue cells at a low temperature of 0-6 DEG C, components providing supplement, antioxidant and anti-apoptosis components for anabolism of the tissue cells; the preserving fluid has good biocompatibility, does not contain toxic or harmful components, and also does not contain components such as animal-derived protein, antibiotics and hormones influencing tissue gene expression. Different from traditional ultralow-temperature cryopreservation (-80 DEG C), the cryopreservation method disclosed by the invention can effectively realize low-temperature storage (0-6 DEG C) of fresh tissue samples of human beings and animals, maintains high cell activity of tissues, maintains tissue morphology, and is used for preservation and transportation of the tissue samples. Meanwhile, the nucleic acid integrity of the tissue and the stability of gene expression can be effectively maintained, the original state of the tissue is maintained, and the method can be used for gene detection, scientific research and other related experiments.

The invention discloses a recovery method of a fiber reinforced composite material. The fiber reinforced composite material is catalytically oxidized through an organic catalyst to depolymerize thermosetting epoxy resin into thermoplastic linear macromolecules and rapidly dissolve the thermoplastic linear macromolecules in an organic solvent, so that the fiber material and the thermoplastic polymer are separated and recovered. The method disclosed by the invention has the advantages of mild degradation conditions, simple process operation, small amount of three wastes, environmental friendliness and the like, and is a green method for recycling the fiber reinforced composite material.

It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.

The invention discloses a preparation method of a Silicalite-1 / ZSM-5 composite molecular sieve, which comprises the following steps: 1)dispersing a ZSM-5 molecular sieve in water under ultrasonic effect, adjusting pH value to 2-6 or 8-13, adding a template, then adding silicon source, uniformly stirring, performing solid-liquid separation, drying to obtain the pretreated ZSM-5 molecular sieve; 2)adding the pretreated ZSM-5 molecular sieve in a mixing solution containing sodium hydroxide and water, uniformly stirring, crystallizing, washing, and drying to obtain the Silicalite-1 / ZSM-5 molecular sieve. According to the invention, the composite molecular sieve Silicalite-1 is completely covered on the ZSM-5 external surface, thickness is uniform, operation is simple, the composite molecular sieve is convenient for large scale production, and the composite molecular sieve has latent application value in toluene methanol alkylation and xylene isomerization reactions.

The invention provides surface sulfur seepage prevention coating for a furan resin-sand production wind power nodular iron casting. The surface sulfur seepage prevention coating is prepared from the following components in parts by weight: 62 to 70 parts of magnesia powder, 2 to 3 parts of lithium-based bentonite, 1 to 1.5 parts of organic bentonite, 0.8 to 1.5 parts of phenolic resin, 0.5 to 1 part of industrial glucose, 0.2 part of polyvinyl butyral (PVB), 0.5 to 1 part of rosin, 0.15 part of ethyl silicate and 24 to 30 parts of ethyl alcohol. The surface sulfur seepage prevention coating of the technical scheme disclosed by the invention can be used for production of all the furan resin-sand production wind power nodular iron castings; for a common mechanical casting, the quality can be improved, and the wind power nodular iron casting and an outlet nodular iron casting can meet the technical requirement of a user more easily; and the surface layer, subjected to sanding cleaning, of the nodular iron casting does not have a sulfur seepage shortcoming, so that the loss on defective product is greatly reduced, and the surface sulfur seepage prevention coating is relatively high in practical value.

A recording tape cartridge which can be loaded into a drive device having a reel on which a recording tape is wound and which is rotatably accommodated in a case, the reel including: a resin-formed main portion which includes a reel hub formed in a tubular shape having a floor, the recording tape being wound around an outer peripheral surface of the reel hub; and a substantially disc-shaped metal plate attached firmly to an outer surface of a floor portion of the reel hub, wherein a gate portion, through which a resin material is introduced at the time of molding the main portion, is provided at a radial direction outer side of the metal plate.

The invention discloses a method for a germanium-silicon epitaxy of high germanium concentration. According to the method, when silane and germane gases are introduced, the germanium content of a germanium-silicon epitaxy can be increased by lowering the percentages of silane and germane. At a same germanium source flow rate, and with the reduction of a silicon source flow rate, the germanium concentration is substantially enhanced, and finally a defect-free germanium-silicon epitaxial film with 25-35% of germanium atoms can be obtained. Under the premise of utilizing existing equipment, the method of the invention balances a growth rate and the doping concentration of germanium. While obtaining a high germanium concentration, the epitaxy growth rate is reduced by only a small degree. And the germanium-silicon epitaxy can be guaranteed to have no defect, meet device requirements, and have enough throughput simultaneously.

Disclosed herein is a method for manufacturing a magnetic garnet single crystal from a melt containing an alkali metal oxide or carbide, garnet single crystal raw materials and Bi2O3-B2O3-PbO as a flux by liquid phase epitaxy (LPE) wherein the garnet single crystal is grown at a relative low temperature due to a reduced viscosity of the melt, and the grown garnet single crystal has a uniform thickness and a specular surface without any crystal defects. Further disclosed is a magnetic garnet single crystal manufactured by the method.

Provided are a polarizing plate which has no defects of unevenness and is excellent in optical characteristics as well as in external appearance, and an image display apparatus of high quality using such a polarizing plate. The polarizing plate of the present invention includes a polarizer and a protective layer (A) placed on at least one surface of the polarizer, in which the protective layer (A) is a (meth)acrylic resin layer having a thickness of 1 to 50 μm with a surface hardness of B or more in terms of a pencil hardness, and an adhesive layer having a thickness of 50 to 150 nm is placed between the polarizer and the protective layer (A).