The invention relates to a process and a device for rapidly growing a
sapphire crystal material of a
corundum system by virtue of a
flame fusion method and belongs to the field of processes and devices for preparing crystals of the
corundum system by virtue of the
flame fusion method. By improvement on the
crystal growth process, the rapid growth method is effectively broken through, the difficulty of not large growth size of the
crystal is completely solved, the production efficiency is greatly improved and the production cost is further effectively controlled. Furthermore, at a high temperature of 2050 DEG C, the low-melting-point
impurity in gamma-Al2O3
powder is gasified, the high-melting-point
impurity is oxidized under an oxidizing
atmosphere, the growth process of the crystal is fully realized, the repurification and recrystallization processes of the crystal are completed in fact, therefore, under the new process condition, the purity of alpha-Al2O3
sapphire crystal reaches up to 99.9998% and the requirement of users on the purity of the crystal is fully met. The whole set of device has simple and reasonable structure and design, is scientific and practical and suitable for being popularized in the industry and the
crystal growth operation is efficiently performed in high quality manner.