The invention discloses a quick
thermal treatment method for preparing a
vanadium dioxide film. The method comprises the following steps of: (1)
cutting a
silicon chip to form a substrate, and cleaning and
drying the
silicon substrate; (2) placing the
silicon substrate of the step (1) in a
vacuum chamber, and depositing a
vanadium dioxide film on the silicon substrate by adopting a target magnetron
sputtering method, wherein the target is 99.99 percent metallic
vanadium,
argon is used as a working gas and
oxygen is used as a reaction gas; (3) putting the
vanadium dioxide film product sputtered in the step (2) into a quick annealing furnace to prepare a
vanadium dioxide film, wherein the annealing temperature is 500 to 550 DEG C, the heating rate is 50 DEG C per second, the heat preservation time is 10 to 30 seconds, cooling is performed within 3 minutes, and the protective gas is
nitrogen; and (4) measuring. By the method, the
thermal treatment time is shortened, and obvious
phase change property can be obtained after the
vanadium dioxide film product is quickly and thermally treated for 10 to 30 seconds; the method is simple
in process control, high in
repeatability and suitable for large-area production; and electric and optical properties of the vanadium dioxide film are optimized. The method is widely applied in the fields of
infrared detectors, memories, optical communications and the like.