188 results about "Vanadium oxide thin films" patented technology

This invention provides a preparation method of vanadium oxides film whose phase change temperature is variable. Siliconoxide film and silicon nitride film deposit on the silicon slice. The method of ion beam reactive sputtering is used to deposit vanadium oxide film. The processing conditions as followings: back bottom vacuum 4X10-4Pa-3X10-3Pa, oxygen pressure 6X10-4Pa-8X10-3Pa, argon gas pressure: 1X10-2Pa-2.3X10-2Pa,ion beam power: 8W-60W, substrate temperature: 120deg.C-450deg.C, sputter time: 10-45min, the vanadium target is butt material. The annealing treatment is for the sample. The processing conditions gas: argon or nitrogen gas, annealing temperature: 250deg.C-580deg.C, annealing time: 20-240 min, and then getting phase change vanadium oxide film.

The invention relates to a vanadium dioxide intelligent temperature control film and a preparation method thereof. The preparation method comprises the following steps of: uniformly dispersing and dissolving vanadic oxide powder in an organic solvent with weak reductibility by adopting a wet chemical solution method; adding PVP (Polyvinyl Pyrrolidone) or PEG (polyethylene glycol) and a metal salt to prepare a doped VOx film (x is more than 2.0 and less than 2.5); and performing thermal treatment to form a doped porous hypovanadic oxide (VO2) film. In a better embodiment, the preparation method comprises the following steps of: adding polyvinyl pyrrolidone and a wolfram salt into a system consisting of vanadic oxide powder, benzyl alcohol and isopropyl alcohol to prepare a wolfram-doped VOx film; and annealing in hydrogen / argon atmosphere at the temperature 410 DEG C for 3 hours to prepare a wolfram-doped porous VO2 film, wherein the metal-insulator phase-transition temperature of the wolfram-doped porous VO2 film can be adjusted between 30 DEG C and 68 DEG C according to doping amount of wolfram, the penetration rate of a visible light region is 70 percent, the difference between the penetration rate before phase transition and the penetration rate after phase transition at the position of which the wavelength is 2,500 nanometers is 62 percent, 3-4 orders of magnitude of specific resistance is changed, and higher practical value is achieved.

The invention provides a low temperature deposition method of vanadium dioxide thin film on a glass substrate by utilizing a principle of template induction function for the crystal growth. Glass is taken as a substrate, and the low temperature deposition method comprises the steps in sequence that firstly, the glass substrate is cleaned and pre-heated; secondly, a silicon dioxide diffusing blocked layer is prepared; thirdly, a metal oxide buffer layer is prepared; fourthly, a vanadium dioxide thermal color layer is prepared. The material of the metal oxide buffer layer adopted by the invention is transparent in the visible light area and has low crystallization temperature, the crystal shape of the material can be well matched with the vanadium dioxide, and the template induction function can be generated during the growing process of the vanadium dioxide thin film, therefore, the deposition temperature of the vanadium dioxide thin film can be greatly reduced. The preparing process of the vanadium dioxide intelligent glass is simplified, the cost is reduced, the energy consumption is saved, and the difficulty of the industrialization process of the vanadium dioxide intelligent glass is greatly reduced.

The invention discloses a terahertz (THz) wave band vanadium oxide optical switch and a preparation method thereof and relates to the technical field of optical communication. The vanadium oxide optical switch is formed by the vanadium oxide film and is loaded in a THz time-domain spectrum system or modem. The method comprises the following steps: using the reactive magnetic sputtering method to prepare a vanadium oxide film on the silicon substrate material; using the THz time-domain spectrum system to generate THz wave, performing laser exciation to the vanadium oxide film during the transmission of the THz wave to ensure that the THz wave can not penetrate through the vanadium oxide film and turn off the vanadium oxide optical switch; and using the THz time-domain spectrum system to generate THz wave, removing laser during the transmission of the THz wave to ensure that the THz wave penetrates through the vanadium oxide film and turn on the vanadium oxide optical switch. By adopting the optical switch and preparation method thereof provided by the invention, the effects of fast switching speed, low insertion loss and high extinction ratio can be realized.

The invention relates to nano polishing solution for chemically mechanical polishing of vanadium oxide, which consists of a nano-abrasive, a pH regulator, a surfactant, a defoaming agent, a bactericide, a cleaning aid and a solvent, wherein the nano-abrasive is zirconium oxide, titanium oxide, plutonium oxide or silica; the pH regulator comprises inorganic base of KOH and organic base of tetramethylammonium, tetraethyl ammonium hydroxide or hydroxy amine; the surfactant is silicane polyethylene glycol ether, polyethylene glycol ether or 2-(2-dodecyloxyethoxy)ethanol; the defoaming agent is poly(dimethylsilane); the bactericide is isomerous thiazolidinone; the cleaning aid is isopropanol; and the solvent is deionized water. The invention has the advantages that: the polishing rate is stably controllable, the damage is low, the cleaning is simple, equipment is not corroded, the environment is not polluted, and the storage time is long; and a vanadium oxide film material is subjected to the chemically mechanical polishing by the nano polishing solution for preparing a resistive random access memory, and the method is simple and practicable, and is completely compatible with an integrated circuit process.

The invention relates to a preparation method of an intelligent temperature control color changing vanadium oxide film, which is characterized by comprising the following steps: (1) preparing tungstenic sol; (2) preparing sol comprising vanadium ions; (3) preparing tungsten-doped vanadium oxide sol, i.e. adding the tungstenic sol obtained in the step (1) into the sol comprising vanadium ions, which is obtained in the step (2), so as to obtain the tungsten-doped vanadium oxide sol; and (4) preparing a tungsten-doped vanadium oxide film, i.e. plating the tungsten-doped vanadium oxide sol obtained in the step (3) on the surface of a washed substrate and then carrying out annealing processing in the inert atmosphere or under the vacuum condition so as to obtain the tungsten-doped vanadium oxide film with an intelligent temperature control color changing function. The method disclosed by the invention has low energy consumption, adopts a simple preparation process, has high safety and has wide application prospect in the field of photoelectronic functional materials.

The invention relates to a functional thin film material preparing technology, which adopts improved ion beam amplify deposited method to make the film and combines the subsequent crystallization and annealing to achieve the impurity element even immersing and the effective place-replacing to vanadium so that the phase starting temperature of the thin film reduces to 12-16 deg. It adjusts the argon / hydrogen ratio film craft and crystallizing heat treatment condition so that when the polycrystalline VO2 thin film transfers to the mental phase from the semiconductor phase, the change of the resistance ratio over 2 magnitude orders.

The invention discloses a high-resistance temperature coefficient vanadium oxide film preparation method which comprises the following steps: (1) performing ion bombardment activation treatment on a substrate in an oxygen-enriched atmosphere; (2) performing vanadium oxide film deposition in two steps at normal temperature: depositing a 1-5nm low-valence ultrathin vanadium oxide seed layer on the treated substrate, and then depositing a vanadium oxide film through reactive sputtering; and (3) rapidly annealing the film at a high temperature in the same atmosphere as reactive sputtering. By adopting the preparation method disclosed by the invention, vanadium oxide film deposition with the resistance temperature coefficient of -3-5% / K is achieved, and meanwhile the preparation method disclosed by the invention has good compatibility with a micro-electromechanical systems (MEMS) process and an integrated circuit manufacturing process, and is applicable to large-scale manufacturing of devices based on the vanadium oxide thermosensitive film.

The invention discloses a low-temperature deposition method for a vanadium dioxide thin film. A magnetron sputtering technique is adopted; vanadium metal or vanadium alloy is taken as a target; oxygen is taken as a reactant gas; argon is taken as a sputtering gas. A vacuum chamber is vacuumized until the air pressure is below the background vacuum of 1*10<-3> Pa before the thin film is prepared; then a mixed gas of the oxygen and the argon is pumped in, and oxygen partial pressure is held to be 0.01-0.06 Pa; in the process of deposition of the thin film, the deposition temperature is controlled to be 240-260 DEG C and negative bias is added to a base, the sputtering power density of the target surface is 2-3 W / cm<2> and the high-property VO2 thin film is obtained on the surface of the base. According to the low-temperature deposition method for the vanadium dioxide thin film, the deposition temperature of the VO2 thin film is low and is matched with appropriate negative bias and other technological parameters to prepare the high-property VO2 thin film which is even and compact, low in phase transition temperature of the vanadium dioxide and good in phase transition property; the production cost is greatly reduced.