Preparation method of thermosensitive-film infrared detector

Abstract

The invention relates to a preparation method of a thermosensitive-film infrared detector. The method comprises the following steps: depositing successively a sacrificial layer, a thermal-sensitive layer and a protective layer on a readout circuit of an infrared detector, wherein a material of the thermal-sensitive layer is vanadium oxide and the material of the protective layer is silicon nitride; simultaneously, imaging the protective layer and the thermal-sensitive layer; depositing a dielectric layer; etching a via and a contact, wherein the via etching ends at an electrode of the readoutcircuit and the contact etching ends at the thermal-sensitive layer surface; depositing a metal electrode layer and imaging the metal electrode layer; carrying out structure release of the sacrificial layer. In the method of the invention, the silicon nitride layer or SiO2 is added to be used as a protective layer of a vanadium oxide thermal-sensitive layer so that the vanadium oxide film, which is the thermal-sensitive layer, can be prevented from generating changes of a thermal property and an electrical property and influence on the detector performance can be reduced. Simultaneously, by using a high selection ratio of the silicon nitride etching to the vanadium oxide etching, the contact and the via can be used to complete the imaging of hole graphics through one lithographic plate.

Description

technical field [0001] The invention relates to the field of infrared detection, in particular to a manufacturing process of a heat-sensitive infrared detector, and especially proposes a new method for the protection of heat-sensitive materials and the simplification of the manufacturing process. Background technique [0002] In recent years, the field of infrared detection is undergoing a revolution. The uncooled infrared imaging technology represented by the microbolometer has made important breakthroughs and achieved commercial mass production. It not only solves the most prominent requirement of low temperature (~77K) cooling in infrared imaging technology, but also realizes large-scale or ultra-large-scale integration with the readout circuit, realizing high density, miniaturization, portability and easy operation. Infrared camera. At the same time, this technology is also suitable for mass production using large-scale integrated circuit production technology, which ma...

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Problems solved by technology

However, O plasma for dry debonding can lead to VO x A phase transition occurs, resulting in VO x The resistance of the resistance changes, resulting in uncontrollable resistance, large fluctuations, and irreversible changes, which affect the performance and yield of the device

If wet degumming is used, it is inevitable to 2 The contact of O molecules also leads to VO x A chemical reaction occurs on the surface of the film, which affects the VO x the quality of

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