Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Vanadium oxide thin film and preparation method thereof

A vanadium oxide thin film and thin film technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of low sensitivity and low phase transition range of vanadium oxide thin film, and achieve simple preparation process, shorten Preparation time, effect of improving repeatability

Inactive Publication Date: 2015-05-06
TIANJIN UNIV
View PDF2 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problems existing in the prior art, the present invention provides a vanadium oxide thin film and its preparation method, which overcomes the problems of low phase transition amplitude and low sensitivity of the vanadium oxide thin film in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vanadium oxide thin film and preparation method thereof
  • Vanadium oxide thin film and preparation method thereof
  • Vanadium oxide thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] 1) Cleaning of Al2O3 substrate

[0036] Put the Al2O3 substrate (1cm×1cm) in the R direction into acetone and absolute ethanol for 15min and ultrasonically vibrate for 15min, then take out the substrate and dry it for later use.

[0037] 2) Preparation of thin films of metal vanadium by magnetron sputtering

[0038] Pure metal vanadium film was deposited on Al2O3 substrate by DPS-Ⅲ type ultra-high vacuum direct-current counter-target magnetron sputtering. For the deposition target, a metal vanadium target with a purity of 99.999% was selected, and the aluminum oxide substrate cleaned in step (1) was placed in a vacuum chamber, and the body was vacuumed to 4.0×10 -4 Pa; use argon with a mass purity of 99.999% as the working gas, control the flow of argon to 48sccm, the working pressure of sputtering to 2.0pa, the sputtering power to 172.5W, the sputtering time to 10min, and the substrate temperature during sputtering for room temperature. The atomic force microscope p...

Embodiment 2

[0045] This embodiment is similar to Embodiment 1, except that: the oxygen flow rate during the annealing process in step 3) is 3 slpm when heating up and keeping warm. The surface morphology of thin films was measured by scanning electron microscopy and atomic force microscopy, such as Figure 5 shown. The phase transition characteristics of the vanadium oxide film were measured by using four probes, and the measured temperature range was 27-90°C. During the heating process, when the surface temperature of the sample is 30.5, 50, 68, and 90°C, the sheet resistance of the corresponding film is 7.89, 5.58, 2.04, and 1.58KΩ / □, and the sheet resistance increases with the increase of temperature. The change factor is about 5; during the cooling process, when the temperature is 90, 68, 50.5, and 30°C, the corresponding sheet resistance is 1.6, 2.4, 2.8, 8.04KΩ / □, and the resistance change factor is 5. The magnitude of the phase transition is nearly an order of magnitude. The curve...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
phase transition temperatureaaaaaaaaaa
Login to View More

Abstract

The invention discloses a vanadium oxide thin film and a preparation method thereof. According to the preparation process, the oxygen flow rate during annealing is improved, so that the surface of the prepared vanadium oxide thin film is loose and porous, and the phase change amplitude of the vanadium oxide thin film is improved. According to the method, the defects that the vanadium oxide thin film is long in preparation time and low in phase change amplitude are overcome, the process parameters can be strictly controlled, and the process repeatability and the phase change amplitude of the vanadium oxide thin film are improved, so that the sensitivity of the device is improved. Meanwhile, according to the loose and porous morphology, the specific surface area of the film is enlarged, and the film plays an important role in improving the gas-sensitive property of the sensor and can be well applied to actual operation.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a vanadium oxide thin film and a preparation method thereof. Background technique [0002] Metallic vanadium reacts with oxygen to form complex vanadium oxide systems with various forms of stoichiometry. Most of the vanadium oxides can undergo insulator-metal transition under thermal excitation, and have different phase transition temperatures. Among all vanadium oxides, because the phase transition temperature of vanadium dioxide is 68°C, which is closest to room temperature, it has attracted extensive attention from researchers. Its thermally induced phase change characteristics are mainly manifested in that it is a semiconductor phase at low temperature, and as the temperature gradually rises, it turns into a metal phase after reaching the phase transition temperature point, and the order of magnitude of the phase transition can reach 4-5, and is A first-order reversibl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/58C23C14/08
CPCC23C14/35C23C14/083C23C14/5806C23C14/5853
Inventor 梁继然李娜刘星胡明
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com