295 results about "Oxide substrate" patented technology

A graphene-on-oxide substrate according to the present invention includes: a substrate having a metal oxide layer formed on its surface; and, formed on the metal oxide layer, a graphene layer including at least one atomic layer of the graphene. The graphene layer is grown generally parallel to the surface of the metal oxide layer, and the inter-atomic-layer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and the surface atomic layer of the metal oxide layer is 0.34 nm or less. Preferably, the arithmetic mean surface roughness Ra of the metal oxide layer is 1 nm or less.

A power module package includes a power circuit element, a control circuit element, a lead frame, an aluminum oxide substrate having a heat sink and an insulation layer, and a sealing resin. The control circuit element is electrically connected with the power circuit element to control chips within the power circuit element. The lead frame has external connection terminal leads in its edge and has a first surface to which the power circuit element and the control circuit element are attached and a second surface which is used as a heat transmission path. The heat sink is a plate made of metal such as aluminum and the electrical insulation layer is formed at least on an upper surface of the heat sink and made of aluminum oxide. The electrical insulation layer may be formed over an entire surface of the heat sink. Here, the insulation layer is attached to the second surface by an adhesive, on a region below where the power circuit element is attached, to the first surface of the lead frame. In addition, the sealing resin encloses the power circuit element and the control circuit element, the lead frame, and the metal oxide substrate and exposes the external connection terminals of the lead frame.

A method is described for strengthening or restoring strength to a flat brittle oxide substrate which includes the steps of coating the edges of the brittle oxide substrate with a strengthening composition without coating a significate portion of the flat surfaces. The strengthen brittle oxide substrate such as glass and a window containing as the window pane the edge strengthen glass are also provided.

A process and apparatus for the decontamination of gaseous contaminants (especially oxygen, carbon dioxide and water vapor) from hydride gases (including their lower alkyl analogs) down to <=100 ppb contaminant concentration are described. The critical component is a high surface area metal oxide substrate with reduced metal active sites, which in various physical forms is capable of decontaminating such gases to <=100 ppb, <=50 ppb or <=10 ppb level without being detrimentally affected by the hydride gases. The surface area of the substrate will be >=100 m2 / g, and preferably 200-800 m2 / g. Oxides of various metals, especially manganese or molybdenum, can be used, and mixtures of integrated oxides, or one type of oxide coated on another, may be used. The substrate is preferably retained in a hydride-gas-resistant container which is installed in a gas supply line, such as to a gas- or vapor-deposition manufacturing unit. The invention provides final decontamination for hydride gas streams intended for gas- or vapor-deposition formation of high purity LED, laser (especially blue laser), electronic, optical or similar products, and can be used in combination with upstream preliminary decontamination process and / or upstream or downstream solid particulate removal units.

A method of making and the resulting non-metallic CMP conditioning pad comprising a non-metallic substrate and a single layer of abrasive particles bonded to the substrate by a non-metallic bonding medium. Preferred substrates include aluminum oxide and graphite. A bonding system employing finely powdered aluminum oxide particles mixed with a suitable adhesive is employed to bond the abrasive layer to the aluminum oxide substrate. Silicon carbide particles mixed into a compatible adhesive carrier including a polymer composition is preferred for bonding the abrasive particle layer to a graphite or carbide substrate.

A method is described for strengthening or restoring strength to a brittle oxide substrate which includes the steps of coating the brittle oxide substrate with an aqueous solution containing a silane-based composition, and curing the coating to form a transparent layer on the brittle oxide substrate. Also disclosed are novel compositions used to coat brittle oxide substrates, and silane-coated brittle oxide containers.

Methods of forming an oxide layer such as high aspect ratio trench isolations, and treating the oxide substrate to remove carbon, structures formed by the method, and devices and systems incorporating the oxide material are provided.

Process for reducing charge leakage in a SONOS flash memory device, including in one embodiment, forming a bottom oxide layer of an ONO structure on the semiconductor substrate to form an oxide / silicon interface having a first oxygen content adjacent the oxide / silicon interface; treating the bottom oxide layer to increase the first oxygen content to a second oxygen content adjacent the oxide / silicon interface; and depositing a nitride charge-storage layer on the bottom oxide layer. In another embodiment, process for reducing charge leakage in a SONOS flash memory device, including forming a bottom oxide layer of an ONO structure on a surface of the semiconductor substrate having an oxide / silicon interface with a super-stoichiometric oxygen content adjacent the oxide / silicon interface; and depositing a nitride charge-storage layer on the bottom oxide layer.

The present invention provides novel catalysts for accomplishing catalytic decomposition of undiluted light hydrocarbons to a hydrogen product, and methods for preparing such catalysts. In one aspect, a method is provided for preparing a catalyst by admixing an aqueous solution of an iron salt, at least one additional catalyst metal salt, and a suitable oxide substrate support, and precipitating metal oxyhydroxides onto the substrate support. An incipient wetness method, comprising addition of aqueous solutions of metal salts to a dry oxide substrate support, extruding the resulting paste to pellet form, and calcining the pellets in air is also discloses. In yet another aspect, a process is provided for producing hydrogen from an undiluted light hydrocarbon reactant, comprising contacting the hydrocarbon reactant with a catalyst as described above in a reactor, and recovering a substantially carbon monoxide-free hydrogen product stream. In still yet another aspect, a process is provided for catalytic decomposition of an undiluted light hydrocarbon reactant to obtain hydrogen and a valuable multi-walled carbon nanotube coproduct.

A semiconductor structure for providing an epitaxial zinc oxide layer having p-type conduction for semiconductor device manufacture and methods of depositing the p-type zinc oxide layer. A zinc oxide layer is deposited epitaxially by molecular beam epitaxy on a crystalline zinc oxide substrate. The zinc oxide layer incorporates a p-type dopant, such as nitrogen, in an atomic concentration adequate to provide p-type conduction. The p-type zinc oxide layer may further incorporate an atomic concentration of a compensating species, such as lithium, sufficient to electronically occupy excess donors therein so that the efficiency of the p-type dopant may be increased.

An alumina comprising composition protective overlayer (20) for protecting a ceramic matrix composite material (12) from a high temperature, moisture-containing environment. Alumina may be used as a protective overlayer to protect an underlying mullite layer to temperatures in excess of 1,500° C. The coating may have porosity of greater than 15% for improved thermal shock protection. To prevent the ingress of oxygen to an underlying ceramic material, an oxide barrier layer may be optionally disposed between the alumina coating and the ceramic material. Such a protective overlayer may be used for an article having a ceramic oxide or non-oxide substrate.

The information recording medium of the present invention comprises at least one of the following oxide-based material layers: (I) an oxide-based material layer containing Zr, at least one element selected from the group GL1 consisting of La, Ga and In, and oxygen (O); (II) an oxide-based material layer containing M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y, and O; (III) an oxide-based material layer containing at least one element selected from the group GM2 consisting of Zr and Hf, at least one element selected from the group GL2, Si, and O; and (IV) an oxide-based material layer containing at least one element selected from the group GM2, at least one element selected from the group GL2, Cr, and O. This oxide-based material layer can be used, for example, as a dielectric layer.

A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and / or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag. Dividing the first layer of titanium oxide, the Ag layers, and / or the third layer with a sublayer of oxidized metal can provide greater thermal and mechanical stability to the respective layers.

The invention provides a catalytic method for generating sulfate radicals and active oxygen species as well as an advanced oxidation method of organic pollutants difficult to biodegrade. The problemsof low degradation efficiency of organic pollutants and high cost in the prior art are solved. According to the catalytic method for generating sulfate radicals and active oxygen species, a transitionmetal oxyhydroxide-based material serves as a catalyst, and the sulfate radicals, hydroxyl radicals, superoxide radicals and singlet oxygen non-radicals are generated, so that the organic pollutantsdifficult to biodegrade are efficiently oxidized. The transition metal oxyhydroxide-based material serves as the catalyst, the activation efficiency of perosulfate is improved and various radicals andactive oxygen species are generated, so that the oxidative degradation rate of the organic pollutants is increased; and the catalyst has a stable structure, is low in heavy metal dissolution rate inthe catalytic process, avoids secondary pollution, and can be widely applied to treatment of industrial production waste water, treatment of domestic sewage, purification treatment of polluted underground water and surface water as well as treatment of polluted soil.

The invention relates to a pyrochlore type high-entropy oxide solidified body and a preparation method thereof. The high-entropy oxide solidified body has a pyrochlore structure, and the chemical formula is RE2M2O7, wherein RE is a rare earth element, and M is a transition metal element. The pyrochlore-type high-entropy oxide solidified body of the invention has excellent chemical stability. Radioactive nuclides of different valence states and types can be solidified in crystal lattices of a high-entropy oxide base material, deep geological disposal is facilitated, , and the system of solidification treatment of base materials for radioactive nuclear waste is enriched. The method is low-cost, is simple and feasible and has a wide application range. The process is high in efficiency and good in safety, and is expected to be applied to the technical field of radioactive nuclear waste treatment.

In a process of preparing a via in a semiconductor substrate wafer in which vias are landed on tungsten, and in which resist is stripped using plasma or chemical based processes that do not remove the veils formed during the etch, the improvement of concurrently removing veil material, controlling the interface of the tungsten, and stripping the resist, comprising:a) depositing and patterning tungsten on a substrate;b) depositing an oxide as an interlevel dielectric on the tungsten;c) patterning the oxide using photolithography and a photoresist;d) etching the oxide using a plasma generated etching method in which veils made up of metals, carbon based materials and oxide based materials are formed on the tungsten and sidewalls of the vias; ande) stripping the resist using a dry polymer removal method employing process gases and reducing gases to concurrently cause resist stripping, removal of the veils, and control of the tungsten interface.

A pearlescent pigment comprising a substrate and a first layer, wherein the first layer comprises iron oxide, wherein the iron has from about 1% to about 30% Fe(II) and from about 70% to about 99% Fe(III). A process for making these pearlescent pigment, comprise reducing a metal oxide substrate with a hydrogen source in the presence of a noble metal catalyst in a liquid medium. The pigments may be used in a variety of applications including cosmetics, plastics, automotive or architectural coatings.

The invention discloses a simple preparation method for a one-piece high load copper base catalyst, which belongs to the technical field of catalyst preparation. Precursors of a metal oxide and active metal are blended at high speed by using a colloid mill, the nucleation process and the crystallization process of precursors of a carrier and an active component are isolated to obtain highly dispersed hydroxide nanoparticle sol, and finally the one-piece high load copper base catalyst which is controllable in metal nucleus diameter and uniform in dispersion is prepared by roasting and reduction. The one-piece high load copper base catalyst is characterized in that nano metal copper is dispersed and anchored in a single magnesium oxide substrate, the specific surface area is 50 to 150 m<2> / g, and the percentage mass content of the copper is 50 to 90 %. After the catalyst is used for hydrogenation preparation of 1, 4-cyclohexanedimethanol by 1, 4-dimethyl cyclohexanedicarboxylic acid and hydrogenation preparation of furfuryl alcohol by furfural, the reaction conversion rate can reach 90 to 99%, and the selectivity to a main product reaches 90 to 99%.

The invention provides a preparation method of a composite material of graphene oxide and titanium oxide nano particles, and belongs to the technical field of preparation methods of catalysts for catalytically degrading a dye. The preparation method comprises the following steps of: dissolving graphite oxide into the water and ultrasonically oscillating; adding titanium dioxide and mixing under stirring; pouring suspension liquid into a teflon bush of a hydrothermal reaction kettle and sealing; reacting for some time while adjusting and controlling the reaction time and the reaction temperature of the hydrothermal method; cooling to the room temperature after the reaction; centrifugally washing the suspension liquid in the telfon bush; and drying the precipitate to obtain the composite material of graphene oxide and titanium dioxide. According to the preparation method of the composite material of graphene oxide and the titanium oxide nano particles, no additives are added, so that the environment is protected, the amount of introduced impurities is decreased, and the deposition or attaching performance of the titanium dioxide nano particles on a graphene oxide substrate is improved; the product is excellent in catalytic performance and can degrade the dye even in a dark condition; and the preparation method is lower in cost, simple and easy in operation, high in stability and repeatability, and suitable for massive production.

A method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET) is provided. Specifically, the present invention provides a method for applying an oxide layer to a silicon carbide substrate so that the oxide-substrate interface of the resulting SiC MOSFET is improved. The method includes forming the oxide layer in the presence of metallic impurities.

A composition includes a templated metal oxide substrate having a plurality of pores and a catalyst material includes silver. The composition under H2 at 30 degrees Celsius, the composition at a wavelength that is in a range of from about 350 nm to about 500 nm has a VIS-UV absorbance intensity that is at least 20 percent less than a standard silver alumina catalyst (Ag STD). The standard alumina is Norton alumina, and which has the same amount of silver by weight.

A capacitor element includes a pair of conductor layers, a plurality of generally tube-shaped dielectric substances, a first electrode outside the dielectric substances and second electrodes in the insides thereof, and insulation caps for insulating the first electrode from the conductor layer, wherein an electrode material is filled in gaps of a structure of an oxide base material resulting from anodic oxidation of a metal, and then, the structure is removed and replaced by a high permittivity material.

The invention provides an oxide-substrate-assisted method for quickly preparing large-size single-crystal graphene, relating to a preparation method of single-crystal graphene. The method is mainly characterized in that metal foil is used as a catalyst and growth substrate, oxide is used as a substrate to closely contact the metal foil, and a normal-pressure chemical vapor deposition (CVD) process is utilized to quickly obtain the large-size high-quality single-crystal graphene. The method solves the technical problems of substrate surface treatment, long growth cycle and the like in the CVD process for preparing large-size single-crystal graphene by using the common single crystal as the substrate, and quickly prepares the high-quality large-size single-crystal graphene sample by using the very simple process.

A process for the release of a biologically active species comprising the steps of:providing a mesoporous oxide-based material having structural order and at least one level of porosity;fixing or immobilizing said biologically active species in said ordered mesoporous oxide; andproviding said ordered mesoporous oxide with said fixed or immobilized biologically active species in vivo thereby realizing intraluminally induced substantially pH-independent supersaturation of said biologically active species resulting in enhanced transepithelial transport; wherein said biologically active species is a poorly soluble therapeutic drug classified as belonging to Class II or Class IV of the Biopharmaceutical Classification System and said ordered mesoporous oxide has a pore size in the range of 4 to 14 nm.

The present invention provides a method for storing thermal energy, such as solar energy, as a fuel, by heating a reactive oxide substrate to a first temperature, such that the reactive oxide substrate is reduced, wherein the reactive oxide substrate includes a cerium oxide. The method also includes contacting the reduced reactive oxide substrate at a second temperature with a gas mixture including carbon dioxide, wherein the first temperature is greater than the second temperature, thereby preparing the fuel. The present invention also provides a method for preparing the reactive oxide substrates by heating a mixture including a doped cerium oxide and a pore-forming agent, such that pores are formed in the doped cerium oxide, thereby forming the reactive oxide substrate.

Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO3, R1-xAxMnO3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

A method for uniformly dispersing noble metal particles on a porous carrier by first mixing an alkoxide product of aluminum or silicon and a noble metal precursor together; then mixing a surfactant into the mixture; then mixing ammonia solution into the mixture to form a hydroxide of aluminum or silicon; then mixing a reducing agent into the mixture to convert the noble metal precursor into noble metal nanoparticles dispersed on the hydroxide; then separating the noble metal nanoparticles and the hydroxide from the mixture before calcining the hydroxide into an oxide of aluminum or silicon.