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Method for preparing vanadium dioxide film by using magnetron sputtering process

A vanadium dioxide and magnetron sputtering technology, applied in sputtering coating, metal material coating process, vacuum evaporation coating and other directions, can solve the range of small temperature change and phase transition temperature adjustment of vanadium dioxide film Narrow and other problems to achieve the effect of avoiding adverse effects

Inactive Publication Date: 2014-10-15
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] CN102912308A discloses a low phase transition temperature vanadium dioxide thin film preparation process, which adopts DC reactive magnetron sputtering technology and annealing technology to prepare low phase transition temperature vanadium dioxide thin film, but the vanadium dioxide thin film prepared by this method has a phase change The range of temperature regulation is narrow (36~42℃), that is, variable temperature change (△T c ) is small, only 6°C; in addition, this method requires annealing treatment to modify the film

Method used

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  • Method for preparing vanadium dioxide film by using magnetron sputtering process
  • Method for preparing vanadium dioxide film by using magnetron sputtering process
  • Method for preparing vanadium dioxide film by using magnetron sputtering process

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preparation example Construction

[0024]The preparation method of the present invention adopts a magnetron sputtering method, adopts a multifunctional magnetron sputtering system, uses a metal vanadium target, vacuumizes, controls the substrate temperature, and feeds argon and oxygen as sputtering gases respectively. and reactive gases to prepare VO 2 film. Specifically, a multifunctional magnetron sputtering system can be used, using high-purity metal vanadium (purity: 99.99%) as the target material, the target material diameter is 2 to 4 inches, the thickness is 4 to 6mm, and the background vacuum is 1 to 5×10 -5 Pa, the substrate temperature is 300-500°C, the Ar gas flow rate is 30-50 sccm, the sputtering power is 20-100w, the sputtering time is 60-300min, and the oxygen flow rate is 0.4-2 sccm.

[0025] The substrate can be selected as Na-free ordinary glass, quartz glass, sapphire or coated with a layer of SiN x Si substrate. For example, by plating a layer of SiN x The Si sheet is used as the substra...

Embodiment 1

[0039] The substrate is a Si sheet coated with a layer of SiNx as the substrate. The SiNx layer is mainly an insulating layer to avoid the leakage of the film in the electrical test. It is cleaned by standard ultrasonic cleaning with acetone, ethanol and deionized water. Using a multi-functional magnetron sputtering system, using high-purity metal vanadium (purity: 99.99%) as the target, the target diameter is 2 inches, the thickness is 5mm, and the back vacuum is 3×10 -5 Pa, the deposition temperature is 400°C, the Ar gas flow rate is 40 standard condition milliliters per minute (sccm), the sputtering power is 60w, the sputtering time is 150min, and the oxygen flow rate is 0.4sccm (that is, the oxygen partial pressure is 1.0%). The grain size of the vanadium thin film is 15nm and the thickness is 70nm.

Embodiment 2

[0041] The steps of Example 1 were basically repeated, except that the oxygen flow rate was 0.6 sccm, that is, the oxygen partial pressure was 1.5%, and the particle size of the vanadium dioxide film was 18 nm, and the thickness was 70 nm.

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Abstract

A method for preparing a vanadium dioxide film by using a magnetron sputtering process comprises: taking metal vanadium as a target material, taking argon as a sputtering gas, and taking oxygen as a reaction gas, performing sputtering so as to form the vanadium dioxide film on a substrate, and specifically controlling the deposition temperature to be 300-500 DEG C, the deposition total pressure to be 0.5-2.0 Pa and the oxygen partial pressure to be 1-5%. The method helps to overcome the disadvantage that a conventional preparation technology for a vanadium oxide film is complex, and also the prepared vanadium oxide film is a vanadium dioxide film with adjustable phase-transition temperature.

Description

technical field [0001] The invention relates to a method for preparing a vanadium dioxide pure phase thin film with an adjustable phase transition temperature, specifically refers to the realization of a vanadium dioxide pure phase thin film with an adjustable phase transition temperature by using a non-doped method using magnetron sputtering The film structure belongs to the field of new inorganic energy-saving materials. Background technique [0002] my country's building energy consumption per unit area is 3 to 4 times that of developed countries. Building energy consumption accounts for nearly 1 / 3 of the total energy consumption, which not only causes a huge waste of energy, but also is a major contributor to greenhouse gas emissions. Most of the heat loss used for building heating, cooling and air conditioning is concentrated in openings such as windows and outer walls of buildings such as walls and roofs. Carrying out low-carbon intelligent integrated control of ligh...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/35
Inventor 金平实曹逊姜萌周怀娟罗宏杰包山虎
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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