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Process for prapring vanadium oxide film

A technology of vanadium oxide film and oxygen, which is applied in the field of information science and technology, can solve the problems of vanadium oxide film damage, reduce the phase transition characteristics of vanadium oxide film, and reduce the repeatability of the method.

Inactive Publication Date: 2003-01-22
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the process of reactive ion beam sputtering coating, since the bombardment ion beam generally uses Ar + Ion beam, during the sputter coating process, the vanadium oxide particles with relatively high energy generated by sputtering bombard the lattice microstructure of the formed vanadium oxide film, which has a damage effect on the vanadium oxide film on the substrate, reducing the The phase change characteristics of vanadium oxide film, although the annealing process can compensate part of the damage, but the phase change effect of the prepared vanadium oxide film is generally not as good as that of other methods (such as PECVD) near the phase transition temperature.
Moreover, in the process of ion beam sputtering coating, since the reaction gas flow rate is restricted by many factors such as ion beam energy, dense flow density, background vacuum and Ar gas flow rate, it is very important to precisely control the reaction gas flow rate. Greatly increases the difficulty of the method and reduces the reproducibility of the method

Method used

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  • Process for prapring vanadium oxide film
  • Process for prapring vanadium oxide film
  • Process for prapring vanadium oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Example 1: (1) Purpose of the method: to prepare a vanadium oxide thin film with a high temperature coefficient of resistance, which is used as a heat-sensitive thin film material for an uncooled infrared detector. (2) Substrate material: Si (3) Preparation process: ①Clean the substrate. Use standard semiconductor cleaning methods to clean the substrate, clean the substrate and dry it for later use. ② Sputtering vanadium film. Open the vacuum chamber, put in the Si substrate, first draw a low vacuum, and then open the high valve to draw a high vacuum. After the high vacuum reaches the predetermined value, it is filled with argon to reach the working pressure. Turn on the parallel source, first clean the Si substrate with a parallel ion beam, then turn off the parallel source, turn on the focus source, and clean the rake material. After cleaning, open the baffle and start sputtering coating. The method parameter list of sputter coating is shown in Table 2:

[0031] ...

Embodiment 2

[0034] Embodiment 2: (1) purpose of the method: to prepare a vanadium oxide thin film with high phase change characteristics, used for phase change micro-optical switches (2) substrate material: Si 3 N 4 (3) Preparation process: The preparation process is basically the same as that of Example 1, but the method parameters are slightly different. Table 4 and Table 5 are respectively the method parameter table of this implementation example

[0035] background vacuum

[0036] The important parameter of the phase-change micro-optical switch is its phase-change characteristic, and the better the phase-change characteristic, the better the characteristic of the vanadium oxide film. Using this method in Si 3 N 4 The change of resistivity of the vanadium oxide thin film prepared on the substrate can reach 3 orders of magnitude before and after the phase transition, and the change of infrared spectral transmittance can reach 60% before and after the phase transition, which...

Embodiment 3

[0037] Reactive gas

[0038] Reactive gas

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Abstract

The preparation process of vanadium oxide film includes: cleaning substrate surface; sputtering vanadium film to the substrate in vacuum chamber after the substrate and the target being cleaned with parallel particle beam and focused particle beam; oxidizing the vanadium film in an annealing furnace heated in argon atmosphere and filled with oxygen to prepare vanadium oxide film; annealing the vanadium oxide film in pure argon atmosphere; and cooling in argon environment to room temperature. The said process results in compact film with high adhesion to the substrate, no need of strict control in reaction gas flow rate, high repeatability and capacity of preparing vanadium oxide film with different chemical composition for different requirement.

Description

technical field [0001] The invention belongs to the field of information science and technology, and in particular relates to a method for preparing a vanadium oxide thin film. Background technique [0002] Since the late 1950s when Morin first discovered that vanadium oxide films have temperature phase transition properties at Bell Laboratories, vanadium oxide films have aroused widespread interest from researchers from all over the world. The research results show that the vanadium oxide film has reversible temperature phase transition characteristics. At room temperature, the vanadium oxide film presents a semiconducting state with a tetragonal lattice structure, which has high resistivity and infrared light wave transmittance; when the film temperature rises When the phase transition temperature is reached, the microstructure and photoelectric properties of the film change suddenly; at this time, the vanadium oxide film changes from a tetragonal lattice structure to a mo...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/36
Inventor 黄光陈长虹王宏臣李雄伟陈四海易新建
Owner HUAZHONG UNIV OF SCI & TECH
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