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Preparation method of vanadium oxide film with high resistance temperature coefficient

A technology of vanadium oxide film and temperature coefficient, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of increasing intrinsic noise of devices and affecting the uniformity of microstructure in vanadium oxide film, achieving The effect of guaranteeing compatibility

Inactive Publication Date: 2015-05-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

Although by doping W, Ti and other transition metal elements, VO x The temperature coefficient of resistance of the film is improved, however, the doping of transition metal elements will affect the uniformity of the microstructure in the vanadium oxide film, and may lead to an increase in the intrinsic noise of the device

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  • Preparation method of vanadium oxide film with high resistance temperature coefficient
  • Preparation method of vanadium oxide film with high resistance temperature coefficient
  • Preparation method of vanadium oxide film with high resistance temperature coefficient

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Embodiment Construction

[0033] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0034] The present invention prepares VO by magnetron sputtering x / ZnS / VO x Thin film structure, and through low temperature annealing treatment to improve VO x The temperature coefficient of resistance of the thin film material, and obtain a suitable thin film resistivity. The present invention uses ZnS thin film as the reducing agent of vanadium oxide material for the first time. The main mechanism is to diffuse oxygen atoms into the ZnS thin film through low-temperature annealing treatment, and at the same time reduce the vanadium in a high-valence state to a low-valence state, and finally obtain VO 2 and V 2 o 3 Dominated mixed-phase vanadium oxide films.

[0035] like figure 1 as shown, figure 1 A flow chart ...

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Abstract

The invention discloses a preparation method of a vanadium oxide film with a high resistance temperature coefficient. The preparation method comprises steps as follows: the surface of a monocrystal silicon substrate is cleaned, and the monocrystal silicon substrate is assembled in a growth chamber of a magnetron sputtering device; a silicon nitride film is sputtered on the surface of the monocrystal silicon substrate; a vanadium oxide film is deposited on the silicon nitride film; a zinc sulfide film is deposited on the vanadium oxide film; a vanadium oxide film is deposited on the zinc sulfide film; a deposited film sample is subjected to annealing treatment. According to the preparation method, high-temperature annealing treatment is not required, compatibility of vanadium oxide film preparation as well as an MEMS (micro-electromechanical systems) process and an integrated circuit technology is guaranteed, a vanadium oxide film material with moderate resistivity can be obtained, and the requirements of a high-performance vanadium oxide based uncooled infrared detector can be met.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, in particular to a method for preparing a vanadium oxide thin film with a high temperature coefficient of resistance (TCR). Background technique [0002] At present, mature high-performance uncooled infrared detectors mainly include pyroelectric and microbolometer two types. Among them, the microbolometer uses the resistivity of the heat-sensitive material to detect the infrared temperature. It has the advantages of no need for chopping, the manufacturing process is compatible with the integrated circuit process, and it is convenient for mass production. [0003] Commonly used heat-sensitive materials mainly include metal and semiconductor thin films. Due to the low temperature coefficient of resistance of metal thin films, their applications in high-performance uncooled microbolometer detectors are limited. Generally, as the temperature of semiconductor materials increases, the ch...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35C23C14/58
CPCC23C14/0629C23C14/0652C23C14/083C23C14/5806
Inventor 张立春王国伟张宇徐应强倪海桥牛智川
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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