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Preparation method and application of porous vanadium dioxide thin film

A vanadium dioxide, porous structure technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problem that the film uniformity and thickness are not well controlled, the vanadium dioxide thin film process is difficult to control, not suitable for Large-scale production and other issues, to achieve high visible light transmittance, improve visible light transmittance, and ensure the effect of infrared regulation efficiency

Inactive Publication Date: 2015-07-15
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation of vanadium dioxide films by sol-gel method is low in cost and simple in process, but the uniformity and thickness of the film are not easy to control; the films prepared by pulsed laser deposition and ion beam sputtering are of good quality, but they are not suitable for large-scale production The magnetron sputtering method has the advantages of high sputtering efficiency, uniform film formation, suitable for large-area production and no pollution, and is widely used
However, the one-step process of oxygen and argon sputtering to prepare vanadium dioxide thin films is difficult to control and has poor repeatability. The post-oxidation method to prepare vanadium dioxide thin films has a simple sputtering process, and the annealing and oxidation process is also easy to control. The film forming effect is good and the repeatability is low. ok, but it needs to be evacuated and put into a specific atmosphere

Method used

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  • Preparation method and application of porous vanadium dioxide thin film
  • Preparation method and application of porous vanadium dioxide thin film
  • Preparation method and application of porous vanadium dioxide thin film

Examples

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Effect test

Embodiment 1

[0030] Prepare a porous vanadium dioxide film on a quartz glass substrate, the specific steps are as follows:

[0031] 1) Clean the glass substrate, the process is as follows: first clean the glass surface with a detergent, then rinse and dry with distilled water, then ultrasonically clean with acetone for 30 minutes, and finally put it in absolute ethanol for 30 minutes, and dry for later use.

[0032] 2) Using the magnetron sputtering method, prepare a V / C composite film on the above-mentioned glass substrate, fix the quartz glass substrate on the substrate stage, put a metal vanadium target (purity 99.99%) and a graphite target (purity 99.9%) ), first draw a low vacuum, and then turn on the molecular pump to fine pump to 3.0×10 -3 Pa. Argon gas (purity 99.999%) was introduced to the pressure in the chamber to 1 Pa, and it was kept stable. The metal vanadium target adopts DC sputtering, and the graphite target adopts radio frequency sputtering. Set the DC target sputterin...

Embodiment 2

[0036] Prepare porous structure vanadium dioxide thin film on ITO glass substrate, concrete steps are as follows:

[0037] 1) Clean the substrate, the process is as follows: first clean the surface of the substrate with a detergent, then rinse and dry with distilled water, then ultrasonically clean with acetone for 30 minutes, and finally put it into absolute ethanol for 30 minutes, and dry it for later use.

[0038] 2) Using the magnetron sputtering method to prepare a V / C composite film on the above-mentioned substrate, the ITO substrate is fixed on the substrate platform, and a metal vanadium target (purity 99.99%) and a graphite target (purity 99.9%) are put in, First draw a low vacuum, and then turn on the molecular pump to fine pump to 3.0×10 -3 Pa. Argon gas (purity 99.999%) was introduced to the pressure in the chamber to 1 Pa, and it was kept stable. Set the DC target sputtering power to 77W, and the RF target sputtering power to 300W. Sputtering time is 3min. Aft...

Embodiment 3

[0042] Prepare vanadium dioxide thin film on quartz glass substrate, difference with embodiment 1 is the sputtering power of vanadium target and carbon target, concrete steps are as follows:

[0043]1) Clean the glass substrate, the process is as follows: first clean the glass surface with a detergent, then rinse and dry with distilled water, then ultrasonically clean with acetone for 30 minutes, and finally put it in absolute ethanol for 30 minutes, and dry for later use.

[0044] 2) Using the magnetron sputtering method, prepare a V / C composite thin film on the above-mentioned glass substrate, fix the quartz substrate on the substrate stage, put the metal vanadium target (purity 99.99%) and graphite target (purity 99.9%) , first draw a low vacuum, and then turn on the molecular pump to fine pump to 3.0×10 -3 Pa. Argon gas (purity 99.999%) was introduced to the pressure in the chamber to 1 Pa, and it was kept stable. Set the DC target sputtering power to 77W, and the RF tar...

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Abstract

The invention discloses a preparation method and an application of a porous vanadium dioxide thin film. The preparation method comprises the following steps: by virtue of a magnetron sputtering method, preparing a C-doped metallic vanadium film from a graphite target and a metallic vanadium target; and then adding the C-doped metallic vanadium film in an annealing furnace and annealing in an atmospheric condition so as to obtain the porous vanadium dioxide thin film having a phase change effect. C doping content can be regulated by controlling the sputtering power of the two target materials, and the optimum annealing temperature and annealing time can be selected according to the C doping content and the thickness of the metallic vanadium film, so that the obtained vanadium dioxide thin film is excellent in performance; an infrared transmittance regulating amplitude can reach 45% and visible light transmittance can reach 70%. Normal glass, quartz glass or transparent conductive oxide glass can be used as a substrate of the thin film; and the thin film has a broad application prospect in the fields of smart windows, light storage devices, optoelectronic switches and the like.

Description

technical field [0001] The invention belongs to the field of preparation of functional thin film materials, in particular to a preparation method and application of a porous vanadium dioxide thin film. Background technique [0002] The vanadium dioxide film undergoes a phase transition from a low-temperature semiconductor state to a high-temperature metal state at 68 °C, and the phase transition process is accompanied by a sudden change in optical and electrical properties. Moreover, its phase transition temperature can be lowered by doping, so vanadium dioxide has high research value and application prospects as a functional thin film material. [0003] Vanadium dioxide has high near-infrared transmittance at low temperature and low near-infrared transmittance at high temperature. However, since bulk or single crystal vanadium dioxide is easy to crack after many phase transition cycles, vanadium dioxide polycrystalline film can overcome this shortcoming and still exist sta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/58C23C14/08
Inventor 陶海征朱本钦赵修建
Owner WUHAN UNIV OF TECH
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