Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Vanadium oxide thin film for micro-metering bolometer and manufacturing method thereof

A technology of microbolometer and vanadium oxide thin film, which is applied in electric radiation detectors, non-adjustable metal resistors, resistors, etc., can solve the problem of difficulty in meeting the long-term operation needs of devices, quality degradation, poor chemical structure stability of thin films, etc. problems, to achieve the effect of being suitable for large-scale industrial production, reducing raw material manufacturing costs, and improving poor chemical stability

Inactive Publication Date: 2010-11-17
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF5 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the electronic structure of the vanadium atom is 3d 3 4s 2 , the 4s and 3d orbitals can lose part or all of their electrons. Therefore, the traditional methods of preparing vanadium oxide films, such as magnetron sputtering, electron beam evaporation, and laser ablation deposition, have their own insurmountable shortcomings: That is, the valence state of the V element in the prepared vanadium oxide film is complex, and the stability of the chemical structure of the film is poor.
Due to the complex composition of the V element, small changes in the preparation process will have a greater impact on the chemical composition of the vanadium oxide film, resulting in significant changes in the electrical and optical properties of the film, which in turn affect the performance of the device.
Therefore, one of the main disadvantages of the microbolometer based on vanadium oxide film is that the preparation process of vanadium oxide film is difficult, and the repeatability and stability of the product are poor.
The disadvantage of co-sputtering metal doping is that the sputtering rate of metal impurities and vanadium oxide is difficult to keep consistent, so the ratio of vanadium oxide to metal impurities in the film prepared by this method is often different from that of the target material, and the ratio Can also vary drastically with sputtering process fluctuations
The disadvantages of this inorganic sol-gel method are: (1) the temperature of sol preparation is too high, which affects device integration; (2) the product contains a large amount of non-metallic F impurities, which affects material properties; (3) the obtained vanadium oxide The light absorption rate is low, which is not conducive to the absorption detection of infrared light
Unfortunately, the conventional organosol-gel method contains some of the same disadvantages as the inorganic sol-gel method, including: (1) when the organic or inorganic sol-gel method is used for metal doping, the stability of metal impurities in the vanadium oxide film Poor performance, impurity diffusion, segregation and other phenomena are prone to occur, resulting in the degradation of the performance and quality of the vanadium oxide thin film, and it is difficult to meet the long-term operation needs of the device; (2) The method of metal doping by organic or inorganic sol-gel method cannot Effectively Improving the Light Absorption Properties of Vanadium Oxide Thin Films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vanadium oxide thin film for micro-metering bolometer and manufacturing method thereof
  • Vanadium oxide thin film for micro-metering bolometer and manufacturing method thereof
  • Vanadium oxide thin film for micro-metering bolometer and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The present invention will be further described below in conjunction with accompanying drawing:

[0036] The guiding ideology of the present invention is in vanadium oxide-carbon nanotube composite membrane structure, utilizes carbon nanotube and vanadium oxide excellent electrical and optical property respectively, prepares the composite thin film (as shown in Figure 1) of comprehensive performance relatively good, It is used as thermistor material and light absorbing material of uncooled microbolometer to improve the performance of infrared detector or terahertz detector. The present invention prepares vanadium oxide-carbon nanotube composite membrane embodiment as follows: 1. select silicon wafer as the substrate 1 of thin film growth, first use Piranha solution treatment and deionized water cleaning, then soak with dilute hydrofluoric acid solution , blow dry with nitrogen, and set aside; ②Put the pre-prepared carbon nanotubes in a beaker, first use chemical treatme...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a vanadium oxide thin film for a micro-metering bolometer and a preparation method thereof. The preparation method comprises the following steps of: (1) cleaning a substrate, and then blow-drying the substrate for later use; (2) putting a prepared original or functionalized carbon nanotube into a beaker to mix with an organic solvent, performing ultrasonic dispersion, and then transferring dispersion liquid to the surface of the cleaned substrate to volatilize the solvent and form crisscross and interconnected carbon nanotube films; (3) putting the substrate diffused with the carbon nanotube films and obtained in the step (2) in to a vacuumized reactor, growing a layer of vanadium oxide film by using the reactor, and performing annealing to form a vanadium oxide-carbon nanotube composite film structure, wherein the grown vanadium oxide film is diffused on the surface of the carbon nano-tube and in gaps between tubes; (4) cooling the vanadium oxide-carbon nanotube composite film structure to the room temperature, and taking the vanadium oxide-carbon nanotube composite film structure out of the reactor; and (5) repeating the steps of carbon nanotube diffusion, vanadium oxide sedimentation and annealing in turn as required to form a vanadium oxide-carbon nanotube multi-layer composite film structure.

Description

technical field [0001] The invention relates to the technical fields of uncooled infrared detection and uncooled terahertz detection, in particular to a thermistor material and light-absorbing material of a microbolometer, and a preparation method thereof. Background technique [0002] Infrared detectors convert invisible infrared heat radiation into detectable electrical signals to realize the observation of external affairs. Infrared detectors are divided into two categories: quantum detectors and thermal detectors. Thermal detectors, also known as uncooled infrared detectors, can work at room temperature, have the advantages of good stability, high integration, and low price, and have broad application prospects in military, commercial, and civilian fields. Uncooled infrared detectors mainly include three types: pyroelectric, thermocouple, and thermistor. Among them, the microbolometer focal plane detector based on thermistor is a kind of uncooled infrared detector that ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C26/00G01J5/20H01C7/00
Inventor 许向东蒋亚东周东王志杨书兵吴志明何少伟
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products