53results about How to "Good phase change performance" patented technology

The invention discloses a phase change microcapsule temperature self-adjusting GRC dry-mixed mortar surface layer material. The surface of a phase change microcapsule is coated with a layer of a cement material to make the phase change microcapsule have a hard shell in order to guarantee the integrity of the phase change microcapsule in the stirring processing process, and carbon fibers are added in order to improve the heat conduction performance of the outer wall of the phase change microcapsule. The phase change microcapsule dry-mixed mortar material produced in the invention can be applied to make the surface layer of glass fiber concrete (GRC), and the GRC produced in the invention has an excellent temperature self-adjusting function.

The invention relates to a nano VO2 film with a superhydrophilic self-cleaning function and an intelligent temperature control function and a preparation method of the nano VO2 film. The preparation method of the nano VO2 film comprises the steps that firstly, a precursor solution of vanadium dioxide is prepared through a sol-gel method; then a substrate is evenly coated with the precursor solution; and finally one-step annealing is conducted, so that the nano VO2 film is obtained. A corresponding tungsten-doped VO2 film can be obtained by directly adding a tungsten source in the precursor solution, and the phase-change temperature can be adjusted to 32 DEG C; the crystal sizes of VO2 particles can be changed through tungsten ion doping, a certain micro-nano structure is formed on the surface of the substrate, and the superhydrophilic self-cleaning function at the water contact angle of 12 degrees is achieved; in addition, the difference of the light transmittance before the phase change and the light transmittance after the phase change of the film in the position with the visible light transmittance being 80% and the wavelength being 2000 nm is 26%, and an extremely good intelligent temperature control effect is achieved.

The invention discloses a segmented heat storage composite phase change material and a preparation method thereof. The composite phase change material comprises the following raw materials in percentage by mass: 15-50% of a hydrated salt phase change material, 0.5-3% of a nucleating agent, 1-2.5% of an emulsifier, and 55-80% of an organic phase change material. The preparation method comprises thesteps of melting the organic phase change material by heating, maintaining the temperature higher than the phase change temperature of the organic phase change material by 1-10 DEG C, adding the emulsifier, and stirring to obtain a uniform mixture; heating the hydrated salt phase change material till melting, adding the nucleating agent, controlling the temperature of the hydrated salt phase change material to be the same as the temperature of the mixture, and stirring to mix the hydrated salt phase change material and the nucleating agent uniformly; mixing the two materials while stirring toobtain a water-in-oil phase change emulsion, so as to obtain a solid segmented heat storage composite phase change material. The sum of latent heat of the two phase changes of the material reaches 162.7-204.7 J / g, and the problem of volatilization of free water produced after the hydrated salt is melted is solved.

The invention discloses a Sb2Tex-SiO2 nano composite phase change material used on a phase change memory. The material is formed by compositing a phase change material Sb2Tex with SiO2 and has a chemical formula of (Sb2Tex)y(SiO2)1-y, wherein x is larger than or equal to 0.5 but smaller than or equal to 3 and y is larger than or equal to 0.2 but smaller than 1. The Sb2Tex-SiO2 nano composite phase change material has the advantages that through doping the SiO2 into the phase change material, the phase change material with a reversible phase change ability is isolated into areas with nanoscales by the amorphous state SiO2, and a composite structure is formed, so the resistivity and the crystallization temperature of the phase change material are increased and the heat conductivity of the phase change material is reduced. Due to the increase of the crystalline state resistance of the phase material, a Reset current of the phase change memory device can be reduced, and thereby the barrier that the Reset current of the phase change is overlarge is overcome; due to the rising of the crystallization temperature, the stability of the Sb2Tex-SiO2 phase material device can be improved; dueto the decline of the melting temperature, the power consumption of the Sb2Tex-SiO2 phase material device is effectively reduced; and due to the reduction of the heat conductivity, the utilization rate of energy can be improved.