Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Inorganic compound crystal CsSb5S8 and preparation method and application thereof

A technology of inorganic compounds and crystals, applied in chemical instruments and methods, crystal growth, self-solid, etc., to achieve the effect of simple process, good application value, and high crystallinity

Active Publication Date: 2021-08-10
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
View PDF1 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since human beings entered the information age, the demand of computers for the storage and processing of information is increasing, and some storage devices in the past can no longer fully meet the growing needs of people.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inorganic compound crystal CsSb5S8 and preparation method and application thereof
  • Inorganic compound crystal CsSb5S8 and preparation method and application thereof
  • Inorganic compound crystal CsSb5S8 and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] Example 1 Sample CsSb 5 S 8 Synthesis

[0063] After Ba (28.8mg), Sb (127.8mg), S (60.6mg) and CsCl (282.8mg) were mixed evenly, they were put into a quartz tube and evacuated to 1×10 -4 Seal the tube with Pa, put it into the muffle furnace and heat it to 800°C at a rate of 32°C / h. ℃), the chemical formula is CsSb 5 S 8 crimson crystals. Take it out and grind it to get powdered CsSb 5 S 8 compound.

[0064] The sample numbers, types and amounts of raw materials, reaction temperature and holding time, and cooling rate are shown in Table 1.

[0065] Table 1

[0066]

Embodiment 2

[0067] The structural analysis of embodiment 2 crystal

[0068] Using single crystal X-ray diffraction and powder X-ray diffraction methods, sample 1 # ~5 # Perform structural analysis.

[0069] The instrument used for single crystal X-ray diffraction: Rigaku FR-X microfocus diffractometer, test condition: 293K, and SHELXTL crystallographic software for structure analysis.

[0070] The instrument used for powder X-ray diffraction: Rigaku Flex600 X-ray diffractometer, test condition: 293K.

[0071] Among them, the results of single crystal X-ray diffraction showed that sample 1 # ~5 # The chemical formula is CsSb 5 S 8 , is a centrosymmetric structure, belongs to the monoclinic crystal system, and the space group is P2 1 / n, the unit cell parameter is Z=4. The inorganic compound crystal CsSb 5 S 8 The crystal structure of figure 1 shown. Inorganic compound free crystal CsSb 5 S 8 is a one-dimensional infinite band structure 1 ∞ [Sb 5 S 8 ], consisting of mu...

Embodiment 3

[0075] Embodiment 3 Differential scanning calorimetry experiment and result

[0076] Take sample 1 # represented by the inorganic compound crystal CsSb 5 S 8 Differential scanning calorimetry tests were performed. The test instrument is a Mettler Toledo thermal analyzer, and the test method is to mix CsSb 5 S 8 The polycrystalline sample is placed in a quartz tube and then pumped to about 10 -4 Pa and sealed. Then, two heating / cooling cycles were performed at a rate of 30°C / min.

[0077] image 3 for its test results, where image 3 (a) represents CsSb 5 S 8 The first differential scanning calorimetry (DSC) cycle of the image 3 (b) means CsSb 5 S 8 of the second DSC cycle. show that CsSb 5 S 8 Its glass transition temperature is 202°C, and it has a crystalline-glass phase transition behavior.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
glass transition temperatureaaaaaaaaaa
glass transition temperatureaaaaaaaaaa
Login to View More

Abstract

The invention discloses an inorganic compound crystal CsSb5S8 and a preparation method and application thereof. The chemical formula of the inorganic compound crystal is CsSb5S8, the inorganic compound crystal belongs to a monoclinic system, and the space group is P21 / n. The cell parameter Z is 4. The glass transition temperature of the inorganic compound crystal is about 202 DEG C, the conductivity of the crystalline state is 1.2 times that of the glass state, and the inorganic compound crystal has good phase change performance, is a novel inorganic phase change compound and has excellent application value in the field of phase change memories.

Description

technical field [0001] The application relates to an inorganic compound crystal and its preparation method and application, belonging to the technical field of inorganic phase change materials. Background technique [0002] With the continuous development of society and continuous advancement of technology, computers play a pivotal role in daily study, work and life. Since human beings entered the information age, the demand of computers for the storage and processing of information is increasing, and some storage devices in the past can no longer fully meet the gradually increasing needs of people. Therefore, it is of great significance to develop large-capacity and high-speed memory. In recent years, companies such as Intel, Samsung, IBM, Philips and STMicroelectronics, as well as many research institutes and universities have started research and development in the field of phase change memory, and have achieved more results in the field of basic and applied research of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B1/10
CPCC30B29/46C30B1/10
Inventor 陈文发郭国聪姜小明刘彬文
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products