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Method for preparing monox infrared permeability increasing vanadium oxide film

A technology of vanadium oxide film and infrared anti-reflection technology, which is applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of low infrared transmittance and poor weather resistance of the film, and achieve the goal of not being easily oxidized, Effects of enhanced weather resistance and increased phase transition range

Active Publication Date: 2015-09-23
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention will solve existing VO 2 In view of the problems of low infrared transmittance and poor weather resistance of thin films, a method for preparing silicon oxide infrared anti-reflective vanadium oxide thin films is provided

Method used

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  • Method for preparing monox infrared permeability increasing vanadium oxide film
  • Method for preparing monox infrared permeability increasing vanadium oxide film
  • Method for preparing monox infrared permeability increasing vanadium oxide film

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specific Embodiment approach 1

[0018] Embodiment 1: The preparation method of a silicon oxide infrared anti-reflection vanadium oxide film described in this embodiment is completed according to the following steps:

[0019] 1. Cleaning: Under the condition of ultrasonic power of 300W~600W, put the V target and Si target in acetone for 15min~30min, ethanol for 15min~30min, and deionized water for 15min~30min, respectively. The V target and the cleaned Si target; under the condition of ultrasonic power of 300W ~ 600W, the sapphire substrate was washed in acetone for 15min ~ 30min, in ethanol for 15min ~ 30min and in deionized water for 15min ~ 30min. Obtain the cleaned sapphire substrate;

[0020]2. Preparations before coating: first install the cleaned V target and cleaned Si target on the magnetron sputtering target, and then place the cleaned sapphire substrate in the high vacuum magnetron sputtering coating system for heating The central position on the table, and then start the vacuum pumping system of ...

specific Embodiment approach 2

[0028] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that in step 1, under the condition of ultrasonic power of 450W-550W, the V target and the Si target are respectively placed in acetone for 20min-25min and ethanol for 20min-25min. Wash for 20min-25min and deionized water for 20min-25min to obtain the cleaned V target and cleaned Si target; under the condition of ultrasonic power of 450W-550W, place the sapphire substrate in acetone for 20min-25min 1. Washing in ethanol for 20 minutes to 25 minutes and in deionized water for 20 minutes to 25 minutes to obtain a cleaned sapphire substrate. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0029] Specific embodiment three: the difference between this embodiment and one of specific embodiments one or two is: in step two, then start the vacuum pumping system of the high vacuum magnetron sputtering coating system, so that in the cabin of the high vacuum magnetron sputtering coating system Vacuum up to 3.0×10 -4 Pa~6.0×10 -4 Pa. Others are the same as in the first or second embodiment.

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Abstract

The invention relates to a method for preparing a monox infrared permeability increasing vanadium oxide film, and aims at solving the problems that the infrared transmittance of an existing VO2 film is low, and weather resistance is poor. The method comprises the first step of cleaning, the second step of preparing before film plating, the third step of VO2 film plating, the fourth step of annealing, the fifth step of SiO2 film plating and the sixth step of shutdown, and accordingly the method for preparing the monox infrared permeability increasing vanadium oxide film is finished. The method is used for preparing the monox infrared permeability increasing vanadium oxide film.

Description

technical field [0001] The invention relates to a method for preparing a silicon oxide infrared antireflective vanadium oxide thin film. Background technique [0002] With the rapid development of modern society, a large number of resources are used, and many non-renewable energy sources will be exhausted within a few decades, so the problem of energy shortage is becoming more and more prominent. serious problems facing countries. In order to solve the problem of energy shortage, a large number of scientific researches have done a lot of research in recent years to develop energy-saving and environment-friendly materials. And VO 2 Thin films are the focus of some of their research, and the VO 2 The thin film applied to automobiles, airplanes, and buildings can automatically adjust the transmittance of sunlight, which is called "smart window" by us. [0003] Smart windows can adjust the intensity of solar radiation entering the building according to the ambient temperatur...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08C23C14/10
Inventor 郭帅朱嘉琦代兵杨磊杨秋玲杨振怀
Owner HARBIN INST OF TECH
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