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Phase-change vanadium dioxide thin film and preparation method thereof

A technology of vanadium dioxide and vanadium dioxide nanometers, which is applied in the field of phase change vanadium dioxide thin film and its preparation, can solve the problems of changing stress level, affecting stability, easy to produce western deviation, etc., and achieve stable performance and automatic adjustment The effect of temperature

Inactive Publication Date: 2015-10-14
周少波
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

In this method, impurities are added during the preparation process, and the impurities change the stress level of the region, making the material not stable enough and prone to westing, thus affecting its stability

Method used

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  • Phase-change vanadium dioxide thin film and preparation method thereof
  • Phase-change vanadium dioxide thin film and preparation method thereof
  • Phase-change vanadium dioxide thin film and preparation method thereof

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Embodiment Construction

[0030] The present invention will be further described in conjunction with specific embodiments. It should be understood that these examples are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the teachings of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of the application.

[0031] figure 1 , a structural schematic diagram of a phase-change vanadium dioxide thin film embodiment, which is a multilayer structure, including a base layer 10, a vanadium dioxide nano-film layer 20 plated on the base layer 10, and a vanadium dioxide nano-film layer coated on the base layer 10. 20 is provided with an infrared transparent film layer 30 . The base layer 10 is a glass base layer. The invention is installed on the...

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Abstract

The invention discloses a phase-change vanadium dioxide thin film. The phase-change vanadium dioxide thin film comprises a base layer, wherein a vanadium dioxide nano-thin-film layer is arranged on the base layer; an infrared light-transmittance film layer is arranged on the vanadium dioxide nano-thin-film layer; the vanadium dioxide nano-thin-film layer is a vanadium dioxide thin film layer deposited by virtue of an ion beam reactive sputtering method; the infrared light-transmittance film layer is prepared by virtue of evaporation or sputtering plating of a high-refraction-rate film and a low-refraction-rate film and is prepared by virtue of alternative evaporation of six small layers including TiO2 thin films and SiO2 thin films. The phase-change vanadium dioxide thin film is capable of reflecting infrared light at high temperature and transmitting infrared light at low temperature, so that the purpose of automatically regulating the temperature is achieved; meanwhile, the performance is table.

Description

technical field [0001] The invention relates to the technical field of new thin film materials, in particular to a new thin film material that can be used for smart windows, energy-saving smart glass), MEMS (VO 2 Phase-change vanadium dioxide thin film and its preparation method in the field of low-light switch, sensor, etc. Background technique [0002] Energy saving, environmental protection, intelligence and safety are the themes in the development of new functional materials. In the technical field of thin film materials, there are currently many heat-reflective radiation materials, such as Japanese Patent JP 98-120946, German Patent DE 19501114 and Chinese Patent Publication Nos. CN 1030142, CN 1204672, CN 1405248A, CN 1434063A. The above disclosed patent technology is mainly based on the combination of traditional low-infrared heat-absorbing inorganic coatings (such as titanium dioxide, zinc oxide, barium sulfate, silicon oxide, etc.), relying on the performance of po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/22C23C14/08C23C14/10C23C14/46B32B9/04B32B17/06B82Y40/00B82Y30/00
Inventor 周少波
Owner 周少波
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