Vanadium oxide film for infrared detector and manufacturing method thereof

Abstract

The invention discloses a vanadium oxide film for an infrared detector and a manufacturing method thereof. The film is a vanadium oxide-carbon nanotube composite film, which is formed by compositing one-dimensional carbon nanotubes and a two-dimensional vanadium oxide film. The film is used as a thermistor material and an infrared absorption material of the infrared detector. The infrared detector is manufactured by using the vanadium oxide-carbon nanotube composite film, so that negative effect on the chemical structure of a sensitive film in the conventional manufacturing technology is overcome, shortcomings of simple carbon nanotubes or a simple vanadium oxide material in the aspects of electrical property, optical property and the like can be overcome, and the comprehensive performance of the infrared detector can be improved at the same time. The manufacturing method of the vanadium oxide-carbon nanotube composite film disclosed by the invention is simple, does not need any complex and expensive film-forming equipment, reduces manufacturing cost, improves the serviceability of the infrared detector and is suitable for massive industrial production.

Description

technical field [0001] The invention relates to the technical field of uncooled infrared detection, in particular to a thermistor material and infrared absorption material of an infrared detector, and a preparation method thereof. Background technique [0002] Infrared detectors convert invisible infrared heat radiation into detectable electrical signals to realize the observation of external affairs. Infrared detectors are divided into two categories: quantum detectors and thermal detectors. Thermal detectors, also known as uncooled infrared detectors, can work at room temperature, have the advantages of good stability, high integration, and low price, and have broad application prospects in military, commercial, and civilian fields. Uncooled infrared detectors mainly include three types: pyroelectric, thermocouple, and thermistor. Among them, the microbolometer focal plane detector based on thermistor is a kind of uncooled infrared detector that has developed very rapidly...

AI Technical Summary

Problems solved by technology

However, since the electronic structure of the vanadium atom is 3d 3 4s 2 , the 4s and 3d orbitals can lose part or all of their electrons. Therefore, the traditional preparation methods of vanadium oxide films, such as magnetron sputtering, electron beam evaporation, laser pulse deposition, etc., have their own insurmountable shortcomings: namely The valence state of the V element in the prepared vanadium oxide thin film is complex, and the stability of the chemical structure of the thin film is poor, etc.

Due to the complex composition of the V element, small changes in the preparation process will have a greater impact on the chemical composition of the vanadium oxide film, resulting in significant changes in the electrical, optical, and mechanical properties of the film, which in turn affect the performance of the device.

Therefore, one of the main disadvantages of the infrared detector based on the vanadium oxide film is: the preparation process of the vanadium oxide film is difficult, and the repeatability and stability of the product are poor.

The disadvantage of co-sputtering metal doping is that the sputtering rate of metal impurities and vanadium oxide is difficult to keep consistent, so the ratio of vanadium oxide to metal in the film prepared by this method is often different from that of the target material, and the ratio is also different. May vary wildly with sputtering process fluctuations

The disadvantages of this inorganic sol-gel method are: (1) the temperature of sol preparation is too high, which affects device integration; (2) the product contains a large amount of non-metallic F impurities, which affects material properties; (3) the obtained vanadium oxide The light absorption rate is low, which is not conducive to the absorption detection of infrared light

Unfortunately, organosol-gel methods suffer from some of the same disadvantages as inorganic sol-gel methods, including: (1) On amorphous substrates, organic or inorganic sol-gel methods often yield polycrystalline oxide Vanadium film, this kind of polycrystalline film has serious diffuse reflection of incident light and high noise, so it is not conducive to be directly applied to infrared detectors; (2) In the vanadium oxide film prepared by organic or inorganic sol-gel method Metal impurities are physically doped, that is, there is no chemical bond between them and vanadium oxide, so this kind of film is also prone to impurity diffusion, segregation, etc., resulting in degradation of performance and quality of vanadium oxide film, making it difficult to Meet the long-term operation needs of the device; (3) Metal doping by organic or inorganic sol-gel method cannot effectively improve the light absorption performance of vanadium oxide film

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