The invention discloses a preparation method of a fine-grained high-purity aluminum
silicon copper alloy target blank for
sputtering. The preparation method of the fine-grained high-purity aluminum
silicon copper alloy target blank for
sputtering comprises the steps that S10, an intermediate
alloy is prepared, specifically, the intermediate alloy is an aluminum
copper intermediate alloy and an aluminum
silicon intermediate alloy; S20, the intermediate alloy is melted with high-purity aluminum with 99.9995% purity in a vacuum
smelting furnace, alloy liquid is obtained after complete melting, and in the alloy liquid, the silicon content is 0.9-1.1 wt%, and the copper content is 0.45-0.55 wt%; S30, the alloy liquid is subjected to on-line refining with high-purity
argon; S40, the alloy liquidafter on-line refining is subjected to two-stage
filtration; and S50, the alloy liquid after two-stage
filtration is casted into a phi 120-164 mm bar blank to obtain the fine-grained high-purity aluminum silicon
copper alloy target blank for
sputtering. According to the preparation method of the fine-grained high-purity aluminum silicon
copper alloy target blank for sputtering, the prepared high-purity AL-1 wt% Si-0.5 wt% Cu target blank for sputtering has very low content of trace
impurity elements, good sputtering film-forming performance and uniform composition.