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Preparation method of fine-grained high-purity aluminum silicon copper alloy target blank for sputtering

A technology of aluminum-silicon master alloy and alloy target, which is applied in the field of sputtering target materials, can solve problems such as device failure, and achieve the effect of uniform structure, low content of impurity and trace elements, and good sputtering film-forming performance

Active Publication Date: 2020-09-29
XINJIANG JOINWORLD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] Due to the solid solution of aluminum and silicon, the pure aluminum film produces aluminum spikes, stress migration (SM) and electromigration (EM), etc., which eventually lead to device failure.

Method used

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  • Preparation method of fine-grained high-purity aluminum silicon copper alloy target blank for sputtering
  • Preparation method of fine-grained high-purity aluminum silicon copper alloy target blank for sputtering
  • Preparation method of fine-grained high-purity aluminum silicon copper alloy target blank for sputtering

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] (1) Master alloy preparation:

[0064] The master alloy is configured by using ultra-pure aluminum raw materials with a purity of 99.9995wt% and high-purity silicon with a purity of 99.9999wt%. The raw materials are put into the vacuum melting furnace with the aluminum-silicon weight ratio of 88:12. The high-purity silicon raw material is broken into powder blocks and added to accelerate the melting of silicon. After the vacuum melting furnace is evacuated, the temperature is raised for smelting. After the aluminum ingot is completely melted, the temperature of the molten aluminum is controlled at 830°C and kept for 1 hour. A graphite rotor was used to stir the molten aluminum for 15 minutes to homogenize the composition, and cast it into a remelted ingot of AL-13wt% Si master alloy (burning loss occurred during the melting process, and the actual ratio was mainly based on the detected ratio).

[0065]The master alloy is configured by using ultra-pure aluminum raw mat...

Embodiment 2

[0073] (1) Master alloy preparation: the same as in Example 1.

[0074] (2) Melting: sawing the above-mentioned aluminum-silicon and aluminum-copper master alloy ingots into small pieces. First, 80wt% is added to a vacuum melting furnace, and the temperature is raised and melted after vacuuming. After the aluminum ingot is completely melted, control the temperature of the molten aluminum to 730-745°C and use heat preservation to stand for 20 minutes. Sampling was carried out using a photoelectric direct-reading spectrometer, and the Si content in the molten aluminum was determined to be 0.80wt%, and the copper content was 0.41wt%. Add the remaining 20wt% of the master alloy twice, repeat the smelting process, and take samples to determine that the Si content in the molten aluminum is 1.0wt%, and the copper content is 0.51wt%. After casting, the bar was sampled to detect the content of metal impurity elements, using a glow discharge mass spectrometer, and the detection data a...

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Abstract

The invention discloses a preparation method of a fine-grained high-purity aluminum silicon copper alloy target blank for sputtering. The preparation method of the fine-grained high-purity aluminum silicon copper alloy target blank for sputtering comprises the steps that S10, an intermediate alloy is prepared, specifically, the intermediate alloy is an aluminum copper intermediate alloy and an aluminum silicon intermediate alloy; S20, the intermediate alloy is melted with high-purity aluminum with 99.9995% purity in a vacuum smelting furnace, alloy liquid is obtained after complete melting, and in the alloy liquid, the silicon content is 0.9-1.1 wt%, and the copper content is 0.45-0.55 wt%; S30, the alloy liquid is subjected to on-line refining with high-purity argon; S40, the alloy liquidafter on-line refining is subjected to two-stage filtration; and S50, the alloy liquid after two-stage filtration is casted into a phi 120-164 mm bar blank to obtain the fine-grained high-purity aluminum silicon copper alloy target blank for sputtering. According to the preparation method of the fine-grained high-purity aluminum silicon copper alloy target blank for sputtering, the prepared high-purity AL-1 wt% Si-0.5 wt% Cu target blank for sputtering has very low content of trace impurity elements, good sputtering film-forming performance and uniform composition.

Description

technical field [0001] The invention belongs to the technical field of sputtering targets, and in particular relates to a method for preparing a fine-grained high-purity aluminum-silicon-copper alloy target blank for sputtering. Background technique [0002] The rapid development of semiconductor integrated circuits (ICs) and the increase in the degree of integration make the quality requirements of metal interconnection wires further improved. Ultra-high-purity aluminum alloy targets are the main supporting materials for metal interconnections in IC manufacturing, and their market scale is expanding day by day. The quality of the sputtering target plays a vital role in the performance of the metal thin film material. [0003] Since the aluminum-silicon-copper film contains a small amount of silicon and metal copper, the film after sputtering greatly reduces the puncture of metal aluminum, so it is widely used as a sputtering target. [0004] High-purity aluminum sputterin...

Claims

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Application Information

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IPC IPC(8): C22C1/03C22C1/06C22C21/02C23C14/34B22D11/00B22D11/119
CPCC22C1/026C22C1/03C22C1/06C22C21/02C23C14/3414B22D11/003B22D11/119
Inventor 马小红徐亚军元鹏超白毅张博刘江滨马青
Owner XINJIANG JOINWORLD CO LTD
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