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177results about How to "Clean interface" patented technology
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Semiconductor device and manufacturing method thereof
ActiveUS20120161126A1Reduce parasitic capacitanceIncrease speedTransistorSolid-state devicesDevice materialWurtzite crystal structure
A semiconductor device capable of high speed operation is provided. Further, a semiconductor device in which change in electric characteristics due to a short channel effect is hardly caused is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed by self-aligned process in which one or more elements selected from Group 15 elements are added to the semiconductor layer with the use of a gate electrode as a mask. The source region and the drain region can have a wurtzite crystal structure.
Owner:SEMICON ENERGY LAB CO LTD
Systems and methods for multicast routing on packet switched networks
InactiveUS20060274720A1Clean interfaceTime-division multiplexData switching by path configurationProtocol Independent MulticastLocal Group
A system architecture is described for supporting protocol independent multicast routing and local group membership multicast protocols concurrently and consistently within a multi-cast border router on a packet switched network.
Owner:ADAMS ANDREW +5
Water dispenser for pets
InactiveUS20080190374A1Encourage adequate hydrationEasy to cleanAnimal watering devicesDiseaseMetabolic waste
An aseptic watering system for pets is that has a unique filtration and sterilization system for providing a source of drinking water substantially free of toxins, pathogens, resultant metabolic wastes, or other contaminants that may cause bothersome and life threatening diseases. The system also includes means for cooling the drinking water to make it more desirable to a pet.
Owner:FARRIS BARRY LEE
Method and device for filtering messages on notification bar of mobile terminal
InactiveCN103546641AReduce information noiseClean interfaceSubstation equipmentTelecommunicationsBlack list
The invention discloses a method and device for filtering messages on a notification bar of a mobile terminal. According to the method and device, applications which a user pays attention to are listed into a white list, and the messages are normally displayed on the notification bar if the messages come from the applications in the white list; or sensitive words which the user is disgusted with are listed into a black list, and the messages are concealed if the messages contain the words in the black list. In this way, the situation that the notification bar is flooded with the messages because all the messages are displayed on the notification bar can be avoided, interference in the messages which the user pays attention to by irrelevant messages is reduced, the interface of the notification bar is purified, and the method and device for filtering the messages on the notification bar of the mobile terminal are particularly suitable for Android cell phones with many pushed messages.
Owner:GUANGDONG OPPO MOBILE TELECOMM CORP LTD
Laser diode and manufacturing method thereof
ActiveUS20050127383A1Lower resistanceLight increaseLaser detailsLaser optical resonator constructionPhysicsResonator
Laser diodes containing aluminum at high concentration in an active layer have been usually suffered from remarkable facet deterioration along with laser driving operation and it has been difficult for the laser diodes to attain high reliability. An aluminum oxide film lacking in oxygen is formed adjacent to the semiconductor on an optical resonator facet, by which facet deterioration can be minimized and, accordingly, the laser diode can be operated with no facet deterioration at high temperature for long time and a laser diode of high reliability can be manufactured at a reduced cost.
Owner:LUMENTUM JAPAN INC
Semiconductor device and manufacturing method thereof
ActiveUS8883556B2Reduce parasitic capacitanceIncrease speedTransistorSolid-state devicesWurtzite crystal structureEngineering
A semiconductor device capable of high speed operation is provided. Further, a semiconductor device in which change in electric characteristics due to a short channel effect is hardly caused is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed by self-aligned process in which one or more elements selected from Group 15 elements are added to the semiconductor layer with the use of a gate electrode as a mask. The source region and the drain region can have a wurtzite crystal structure.
Owner:SEMICON ENERGY LAB CO LTD
Rare earth alloy powder-modified Ti(C,N)-based metal ceramic and preparation method thereof
The invention discloses a rare earth alloy powder-modified Ti(C,N)-based metal ceramic and a preparation method of the metal ceramic. The metal ceramic comprises Co and Ni or at least two of components selected from Co, Ni as well as Fe as a bonding phase, Ti(C,N) as a basic hard phase and optionally at least one of metallic carbides; and a rare earth alloy powder modifier 0.1-3wt% of the total mass of the metal ceramic. The preparation method comprises treating a raw material through a wet-grinding and mixing process, a die-forming process, a vacuum-degreasing process and a low-pressure sintering process to prepare the rare earth alloy powder-modified Ti(C,N)-based metal ceramic. On the premise of keeping high hardness and high wear resistance, the Ti(C,N)-based metal ceramic prepared according to the invention has excellent comprehensive performance, can be greatly improved in strength and tenacity and can also be widely applied to various cutting tools and wear-resistant parts.
Owner:SICHUAN UNIV
Preparation method for silver-zinc oxide nano-composite structure
The invention discloses a preparation method for a silver-zinc oxide nano-composite structure. The method is simple, efficient and environmentally friendly. The method comprises the steps that the characteristic that electric charges carried by zinc oxide and electric charges carried by nano-silver are opposite is utilized, and nano-zinc oxide powder carrying the positive electric charges is added into nano-silver sol with the negative electric charges in a certain proportion; ultrasonic dispersion or mechanical agitation is performed, so that the nano-zinc oxide powder and the nano-silver sol are fully mixed; on the basis of electrostatic interaction, nano-silver particles are loaded onto the surface of the nano-zinc oxide; afterwards, the obtained solid product is separated through centrifugation or filtration, and the solid product is washed several times with ethyl alcohol and dried to obtain the target product. The preparation method is simple and easy and convenient to implement, the range of the raw materials is wide, neither a surface active agent nor a molecular coupling agent needs to be added, the method is low in energy consumption, free of pollution and environmentally friendly, the product is even in load, the size of loaded silver particles and the amount of load can be regulated and controlled, the interface is clean, and the method is beneficial to accurate regulation and control over the antibacterial activity, photocatalytic properties and surface-enhanced Raman scattering properties of silver-zinc oxide nano-composite structure.
Owner:QINGDAO UNIV OF SCI & TECH
Semiconductor device and manufacturing method thereof
ActiveUS9443984B2Excellent characteristicsImprove reliabilityTransistorSolid-state devicesCrystalline oxideHydrogen
A semiconductor device capable of high speed operation is provided. Further, a highly reliable semiconductor device is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed in such a manner that one or more of elements selected from rare gases and hydrogen are added to the semiconductor layer by an ion doping method or an ion implantation method with the use of a channel protective layer as a mask.
Owner:SEMICON ENERGY LAB CO LTD
Manufacturing method of semiconductor device
InactiveUS7098087B2Improve finenessQuality improvementTransistorSolid-state devicesNoble gasHigh frequency power
It is an object of the present invention is to provide a technique for forming a dense insulating film of good quality that is applicable to a transistor made on a substrate weak against heat such as a glass and a semiconductor device that can realize high performance and high reliability using the technique. In the present invention a silicon oxide film is formed on a crystalline semiconductor film, which is formed on an insulating surface, by the sputtering method using silicon as a target by applying high-frequency power in an atmosphere containing oxygen or oxygen and a rare gas, a silicon nitride film is formed thereon by applying high-frequency power in an atmosphere containing nitrogen or nitrogen and a rare gas, and then, heat treatment of a stacked body of the crystalline semiconductor film, the silicon oxide film, and the silicon nitride film at a temperature higher than a temperature for forming the films is performed.
Owner:SEMICON ENERGY LAB CO LTD
Preparation method of fluorescent ceramic containing aluminum oxide matrix and related fluorescent ceramic
The invention provides a preparation method of fluorescent ceramic containing an aluminum oxide matrix. The preparation method sequentially comprises the following steps: mixing aluminum oxide, fluorescent powder and a sintering additive and removing impurities to obtain fluorescent ceramic precursor powder; then sintering the powder under an oxygen-free atmosphere to obtain the fluorescent ceramic. The grain diameter of each component is selected to be a pre-set size and the fluorescent ceramic precursor powder is subjected to high-pressure treatment in a sintering process; the sintering additive and corresponding nitrate are used as raw materials for introducing oxide. By adopting the preparation method provided by the invention, the aluminum oxide enters a liquid phase at relatively low temperature under the condition that the fluorescent powder has an unchanged crystal new look in a preparation process and the uniform and dense fluorescent ceramic with low porosity is obtained; the heat-conducting performance and luminous efficiency of the fluorescent ceramic are extremely improved.
Owner:APPOTRONICS CORP LTD
Sputtering apparatus and film forming method
InactiveUS7156961B2Clean interfaceIncrease ratingsCellsVacuum evaporation coatingSputteringEngineering
The present invention is to provide a sputtering apparatus and a thin film formation method which make it possible to form respective layers of a multilayer film having a clean interface at a optimum temperature, or which make it possible to continuously carry out the film formation and the surface processing. Another object of this invention is to provide a small sputtering apparatus for forming a multilayer film as compared with prior art apparatus. A sputtering apparatus of this invention comprises a main shaft around which at least one target and at least one surface processing mechanism are installed, a substrate holder holding a substrate or a plurality of substrates arranged facing the target and the surface processing mechanism, and a rotation mechanism to rotate the main shaft or the substrate holder.
Owner:ANELVA CORP
Method and device for playing video in small window in browser
InactiveCN104133898AAvoid ignoringMeet the needs of video browsingSpecial data processing applicationsComputer graphics (images)Web page
The invention discloses a method and device for playing video in a small window in a browser. The method comprises the following steps that A, video elements selected in a current webpage window are acquired; C, an independent video window which is independent of the current webpage window and is used for containing and playing video is established; D, other elements besides the selected video elements in the current webpage window in the step A are concealed; E, the current webpage window in the step A is moved and bound in the independent video window. The method and device for displaying the video in the small window in the browser has the advantages that the other elements besides the video elements in the current webpage window are concealed and then transferred to the independent video window so that the video can be protruded, an interface where the user watches the video is clearer, playing of the video is not influenced, and the video does not need to be replayed. In addition, whether elements pointed to by a user mouse are video elements or not can be better and more stably judged, and the video elements embedded in an iframe are prevented from being omitted.
Owner:SHANGHAI 2345 NETWORK TECH
In-situ synthesis TiB2/TiC reinforced Ti2Ni/TiNi biphase metal compound base composite coating and preparation method
ActiveCN105112907APrecise thickness controlLess stomataMetallic material coating processesCarbideHardness
The invention relates to an in-situ synthesis TiB2 / TiC reinforced Ti2Ni / TiNi biphase metal compound base composite coating and a preparation method thereof. The preparation method includes the steps that (1) nickel base alloy powder and carbide ceramic powder are sufficiently stirred and ground, and uniform mixed powder is formed; (2) a compact prefabricated coating is formed on a titanium alloy Ti6Al4V base; and (3) the prefabricated coating is subjected to laser cladding, and the in-situ synthesis TiB2 / TiC reinforced Ti2Ni / TiNi biphase metal compound base composite coating which is uniform in structure, low in cracking sensibility and excellent in abrasion resistance is obtained. Compared with the prior art, the prepared composite coating is uniform in structure, high in hardness, low in cracking sensibility and excellent in abrasion resistance. The in-situ synthesis TiB2 / TiC reinforced Ti2Ni / TiNi biphase metal compound base composite coating can be applied to titanium alloy parts working under the abrasion work condition on aerospace vehicles and naval vessels, and can be also applied to modification of titanium alloy parts of acid-resistant pumps and acid-resistant valves.
Owner:SHANGHAI UNIV OF ENG SCI
Preparation method of high-entropy ceramic composite coating
ActiveCN111254376AHighlight substantive featuresSimple preparation processMolten spray coatingCeramic compositeThermal spraying
The invention provides a preparation method of a high-entropy ceramic composite coating. The preparation method of the high-entropy ceramic composite coating comprises the following steps that step one, metal simple-substance powder, silicon carbide powder and a binder are prepared into metal simple-substance / silicon carbide composite powder, and the metal simple-substance powder is any five or more than five of zirconium, titanium, hafnium, tantalum, niobium, vanadium, chromium, molybdenum, tungsten, manganese or cobalt; step two, the surfaces of base materials needing coating are pretreated;and step three, a method of thermal spraying is adopted to spray the metal simple-substance / silicon carbide composite powder on the surfaces of the base materials, so that the high-entropy ceramic composite coating is synthesized through an in-situ reaction. The obtained coating has excellent performance, and the disadvantage that high-entropy ceramic composite powder is required to be prepared in the process of preparing the high-entropy ceramic composite coating in the prior art is further overcome.
Owner:HEBEI UNIV OF TECH
Laser diode and manufacturing method thereof
ActiveUS6990133B2Minimizing deteriorationHighly reliable laser diodeLaser optical resonator constructionSolid-state devicesHigh concentrationOxygen
Laser diodes containing aluminum at high concentration in an active layer have been usually suffered from remarkable facet deterioration along with laser driving operation and it has been difficult for the laser diodes to attain high reliability. An aluminum oxide film lacking in oxygen is formed adjacent to the semiconductor on an optical resonator facet, by which facet deterioration can be minimized and, accordingly, the laser diode can be operated with no facet deterioration at high temperature for long time and a laser diode of high reliability can be manufactured at a reduced cost.
Owner:LUMENTUM JAPAN INC
P-type (Bi0.25Sb0.75)2Te3/CeyFe4Sb12(y=0.8-1.2)-based bulk gradient thermoelectric material and preparation method thereof
InactiveCN101794858AClean interfaceHigh bonding strengthThermoelectric device manufacture/treatmentThermoelectric device junction materialsThermoelectric materialsGraphite
The invention discloses a P-type (Bi0.25Sb0.75)2Te3 / CeyFe4Sb12(y=0.8-1.2)-based bulk gradient thermoelectric material, which comprises a material of a low-temperature layer and a material of a medium-temperature layer, wherein the low-temperature layer comprises (Bi0.25Sb0.75)2Te3; the medium-temperature layer comprises CeyFe4Sb12(y=0.8-1.2); and a Ni or Cu transitional layer is arranged between the materials of the two layers. The invention also discloses a preparation method of the thermoelectric material, which comprises: firstly, preparing a CeyFe4Sb12 bulk according to a chemical formula; secondly, preparing (Bi0.25Sb0.75)2Te3 powder; and finally, placing the CeyFe4Sb12 bulk in a graphite mold, flatly spreading the transitional layer of the (Bi0.25Sb0.75)2Te3 powder on the CeyFe4Sb12 bulk and placing the mold in an SPS sintering furnace to sinter the materials. The thermoelectric material of the invention has a clean interface and high bonding strength and can be widely used in the field of low-high temperature waste gas and heat power generation.
Owner:BEIJING UNIV OF TECH
Method of manufacturing thin film transistor
InactiveUS7011996B2High carrier mobilityImprove uniformityTransistorSemiconductor/solid-state device manufacturingEngineeringGate oxide
After a polysilicon semiconductor film 5 and a first gate oxide film 6 are formed on a transparent insulating substrate 1, the semiconductor film 5 and the first gate oxide film 6 are patterned into an island shape to form an island part. At this time, an overhang part 8 of a visor shape is formed where side end surfaces of the first gate oxide film 6 and the semiconductor film 5 are not aligned and an end part of the first gate oxide film 6 projects slightly from a position of a side end surface of the semiconductor film 5. The overhang part 8 is removed, for example, during cleaning, which thus enhances yield.
Owner:VISTA PEAK VENTURES LLC
Method and System for Creating and Utilizing a Metadata Apparatus for Management Applications
ActiveUS20120226719A1Increase in numberStreamlines upgrade processData processing applicationsDigital data processing detailsMetadataHuman body
A method and system used to create a metadata apparatus that functions as a standard electronic language to both describe a complex item in precise detail and define data, objects, people and locations related to the item so as to provide a common secure platform and unlimited secondary meaningful use for products and systems that manage the item and related elements. The physical components of the apparatus include data centers, servers, desktop computers, mobile computing devices such as laptop computers, smart phones and computer tablets, and electronic devices in the field. For health care, the item is the human body. Examples of a device are machines used for medical imaging, laboratory analysis and patient surveillance such as EKGs, oximeters, respirators, etc.
Owner:SEWALL BARRY
Lead-free, high-sulphur and easy-cutting copper-manganese alloy and preparation method thereof
Disclosed are a lead-free, high-sulphur and easy-cutting copper-manganese alloy and preparation method thereof. The alloy comprises the following components in percentage by weight: 52.0-95.0 wt. % of copper, 0.01-0.20 wt. % of phosphorus, 0.01-20 wt. % of tin, 0.55-7.0 wt. % of manganese, 0.191-1.0 wt. % of sulphur, one or more metals other than zinc that have an affinity to sulphur less than the affinity of manganese to sulphur, with the sum of the contents thereof no more than 2.0 wt. %, and the balance being zinc and inevitable impurities, wherein the metals other than zinc that have an affinity to sulphur less than the affinity of manganese to sulphur are nickel, iron, tungsten, cobalt, molybdenum, antimony, bismuth and niobium. The copper alloy is manufactured by a powder metallurgy method, in which after uniformly mixing the alloy powder, sulphide powder and nickel powder, pressing and shaping, sintering, re-pressing, and re-sintering are carried out to obtain the copper alloy, and the resulting copper alloy is thermally treated.
Owner:HUNAN TERRY NEW MATERIALS COMPANY
Aluminium-in situ titanium boride composite powder
The present invention discloses an aluminium-in-situ titanium boride composite powder, belonging to the field of material technology. Its composition includes (mass%) 60-99.9% of aluminium and 0.1-40% of titanium boride reinforced granules. The described powder grain size is 5-60 micrometers, and the grain size of the described titanium boride reinforced granules is 50-300 nm, and the granule form is hexagonal form or rectangular paralleling. In the powder metallurgy said invention can raise mechanical property of composite material.
Owner:SHANGHAI JIAO TONG UNIV
Ti3AlC2/Ti5Si3 compound material and its preparation method
The invention relates to a method for synthesizing titanium silicide (Ti5Si3) granule in original position to intensify the composite material based on titanium carbide aluminum (Ti3AlC2). Adding a certain amount of silicon, to prepare the Ti3AlC2 / Ti5Si3 composite material of different volume ratio, the volume percentage of the titanium silicide granule is 10-40%. The specific preparing method comprises: employing titanium powder, aluminium powder, silicon powder and graphite powder as raw material, the mole ratio of Tií†Alí†Sií†C is 3: (1.1-x): (1.8~2.0), and x is 0.1-0.5, mixing the raw material powder with physical-mechanical means for 8-24 hours, loading into the graphite mould, the forced pressure is 10-20 Mpa, calcinating in the heating furnace under protective atmosphere, the heating-up speed is 10-50 Deg C / min, the calcining temperature is 1400-1600 Deg C and lasting for 0.5-2 hours, the calcinating pressure is 20-40 Mpa. The titanium carbide aluminium / titanium silicide of high purity and high intensity can be produced under lower temperature and in shorter time by applying this invention.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Preparation method of endogenous double-phase particle enhanced aluminum-based composite material
The invention relates to a preparation method of an endogenous double-phase particle enhanced aluminum-based composite material and belongs to the field of aluminum composite materials. The preparation method comprises the steps: by taking TiO2 powder and KBF4 powder as raw materials, uniformly mixing, drying and pressing the raw materials to obtain a mixed powder blank; adding the mixed powder blank into an aluminum alloy smelt and stirring the mixture; after an endogenous reaction, eliminating reaction dross; adding a refining agent C2Cl6(0.2-0. 7wt.%) to degas and refine; and leaving a compound melt to stand and pouring the same into a casting mould to obtain the endogenous TiB2 and Al2O3 double-phase particle enhanced aluminum-based composite material. According to the aluminum-based composite material provided by the invention, the endogenous TiB2 and Al2O3 particles are fine and uniform, clean in surface and good in combination with a matrix, and the endogenous double-phase particle enhanced aluminum-based composite material has the characteristics of light weight, high strength, high elastic modulus and the like.
Owner:KUNMING UNIV OF SCI & TECH
Method for synthesizing TiCx particle enhanced nickel base composite material by reaction in-situ
Owner:NORTH CHINA ELECTRIC POWER UNIV (BAODING) +1
Method for large-area transfer of two-dimensional transition metal chalcogenide film and application thereof
InactiveCN110648922AImproves Structural IntegrityEasy to removeTransistorSolid-state devicesThin membraneChemistry
The invention discloses a method for large-area transfer of a two-dimensional transition metal chalcogenide film and an application thereof. The method comprises the following steps: preparing a large-area two-dimensional transition metal chalcogenide film; sequentially depositing a single-layer organic dye molecular film and a dielectric film on the surface of the transition metal chalcogenide film by adopting a Van der Waals epitaxial growth technology and an atomic layer deposition technology, and arranging a layer of polymer film; and carrying out separation to obtain a transition metal chalcogenide / single-layer organic dye molecule / dielectric / polymer composite film based on a water permeation separation principle, combining the composite film with a target substrate, and removing thepolymer film to finish transfer. The transferred two-dimensional transition metal chalcogenide film has large-area integrity and a pollution-free interface. The transferred two-dimensional transitionmetal chalcogenide / single-layer organic dye molecular film-dielectric film can be used as a channel layer and a dielectric layer of an electronic device, has extremely low electric leakage and interface state, and can reduce the working voltage of the electronic device.
Owner:NANJING UNIV
High-quality graphene/two-dimensional metal carbide crystal vertical heterostructure material and preparation method thereof
ActiveCN109019569AHas a clean interfaceConsistent crystal orientationMaterial nanotechnologyGrapheneMetal foilCopper foil
The invention relates to the field of new materials, particularly to a high-quality graphene / two-dimensional metal carbide crystal vertical heterostructure material and a preparation method thereof. According to the preparation method, a bimetal laminate formed by a copper foil / metal foil sheet is used as a growth substrate, graphene grows at a high temperature through catalytic cracking of a carbon source by using a CVD technology, and a two-dimensional transition metal carbide crystal grows under the graphene by increasing the temperature, or graphene and a two-dimensional transition metal carbide directly grow at a temperature of higher than the melting point of copper so as to prepare a graphene / two-dimensional metal carbide vertical heterostructure; and subsequently the copper substrate is etched off to obtain the graphene / two-dimensional metal carbide vertical heterostructure. According to the present invention, the foundation is established for the research and applications of high-quality graphene / two-dimensional metal carbide vertical heterostructure in the fields of catalysis, laser detection, transparent electric-conduction films, thermal management, two-dimensional superconductivity, high transparent Josephson junctions.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Endogenous particle hybrid reinforced aluminum matrix composite and preparation method thereof
The invention provides an endogenous particle hybrid reinforced aluminum matrix composite and a preparation method thereof and belongs to the technical field of composites. The endogenous particle hybrid reinforced aluminum matrix composite is prepared from the following components in percentage by weight: 0-15% of Si, 0-8% of Cu, 0-5% of Mg, 0.1-15% of TiB2 particles, 0.1-10% of TiC particles and the balance of Al. The endogenous particle hybrid reinforced aluminum matrix composite comprises the following steps: (1) adding commercially pure aluminum to a crucible, melting an aluminum ingot and heating in the presence of argon; (2) evenly mixing AlTi20 powder and B4C particles as well as Ce2O3 together and drying; (3) injecting the mixture into the melt by use of an aluminum alloy refining rotary injection device, controlling the flow of the argon and performing mechanical stirring; (4) after the reaction is terminated, withdrawing from the rotary injection device and standing; (5) pouring into a die to obtain the endogenous particle hybrid reinforced aluminum matrix composite. The aluminum matrix composite prepared by use of the method is clean in interface, controllable in particle size and even in particle distribution, and meanwhile, the preparation method has the advantages of simple preparation process and suitability large-scale production.
Owner:赵遵成
Information processing method and device
InactiveCN104994236AEasy to useImprove experienceSubstation equipmentInformation processingWorld Wide Web
The embodiment of the invention discloses an information processing methodand an information processing device. The information processing method comprises a step of receiving communication information of multiple communication accounts associated with contacts; a step of bonding the communication information of the multiple communication accounts into an information set; and a step of displaying the information set in a preset displaying area. In the embodiment of the invention, all communication information of the contacts are bonded into the information set and intensively displayed, which is convenient for a user to use and check the communication information, thereby improving the communication continuity and increasing the user experience.
Owner:MEIZU TECH CO LTD
Ceramic-intermetallic compound composite material containing binder and preparation method thereof
InactiveCN101812622AThe process is simple and reliableSave energyElectrical resistance and conductanceCombustion
The invention relates to a ceramic-intermetallic compound composite material containing a binder and a preparation method for . The metal binder accounts for less than 20% of the total weight by weight percentage, and ceramic particles in situ are one kind of or two kinds of TiB2 and TiC. The weight percentage of the total weight of the ceramic particles in situ is less than 20%, and the weight percentage of the total weight of the TiB2 and TiC is less than 40%. The preparation method comprises the steps of: (1) mixing Cu, Ni, Fe, Al, Cr, B, C, Si and Ti powder as reactants according to a certain proportion and pressing into a blank; (2) heating the pressed blank in argon atmosphere by resistance wires for preheating, and then heating by the heat of the resistance until combustion synthetic reaction occurs; and (3) pressurizing after reaction to densify the blank, and form in situ ceramic reinforced intermetallic compound the composite material for containing the metal binder. The composite material has the advantages of excellent performance such as high intensity, high rigidity, and the like, simple preparation process, simple equipment, low energy consumption and easy popularization and application.
Owner:JILIN UNIV
Method for efficiently preparing nickel-coating copper composite powder through ultrasonic chemistry
InactiveCN103611933AIncreased spreading rateClean interfaceLiquid/solution decomposition chemical coatingChemical platingPowder metallurgy
The invention belongs to the technical field of powder metallurgy, and particularly relates to a method for efficiently preparing nickel-coating copper composite powder through cooperation of the high-energy ultrasonic technique and the hydrometallurgy. According to the method, the high-energy ultrasonic processing technique is combined with an alkaline chemical plating preparation method, the void effect, the shocking effect and the like of high-energy ultrasounds are adopted, the prepared nickel-coating copper composite powder is high in efficiency, excellent in dispersibility, even and free of agglomeration, particles are in ball shapes, the particle diameters range from 30 micrometers to 90 micrometers, the nickel coating is complete, plating layers are compact, and the powder is in the crystalline state. The method for preparing the nickel-coating copper composite powder through ultrasonic chemistry is simple in preparation technology, economical, efficient, complete in coating, free of segregation and capable of achieving industrial production of the high-quality nickel-coating copper composite powder.
Owner:JIANGSU UNIV OF SCI & TECH
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