149results about How to "Avoid grain growth" patented technology

A wiring glass substrate includes a glass substrate formed of glass and having a plurality of holes formed at predetermined positions, bumps so formed as to be connected to a conductive material filling the holes and wirings formed on a surface opposite to a surface having the bumps formed thereon and electrically connecting a plurality of connection terminals arranged in intervals different from intervals of the holes to the conductive material. The shape of the conductive material is porous and porous electrodes are bonded to the inner wall surfaces of the holes by an anchor effect to increase the strength of the glass substrate.

The invention discloses a method for preparing rare-earth vanadate LaVO4:Eu red fluorescent powder, which comprises the following steps: weighing La2O3 and Eu2O3 according to molar ratio; dissolving two oxides with concentrated nitric acid, and diluting the two oxides with deioniezed water; weighing NH4VO3 of which the mole number is two times that of rare-earth oxide to be prepared into dilute solution, and adding the dilute solution into rare-earth solution to obtain yellow clear solution; adding citric acid of which the mole number is 0.75 time that of rare-earth atoms and taken as a complexing agent into the yellow clear solution; adjusting the pH value of the mixed solution to be 5 to 7 with nitric acid and ammonia water; pouring the obtained emulsion into a polytetrafluoroethylene reaction kettle after the mixed solution is stirred, placing the reaction kettle into a microwave oven, and performing microwave irradiation for 8 to 10 minutes; and removing supernatant liquid after performing high speed centrifugation on the obtained suspension liquid, and washing and drying sediment to obtain the red fluorescent powder LaVO4:Eu. The method has the advantages of simple and convenient operation and quick synthesis. The obtained powder has the characteristics of high purity, high crystallinity, uniform particle size, and stable luminescence.

Components and methods of processing such components from precipitation-strengthened alloys so that the components exhibit desirable grain sizes following a supersolvus heat treatment. The method includes consolidating a powder of the alloy to form a billet having an average grain size. The billet is then forged at a temperature below the solvus temperature to form a forging having an average grain size of not coarser than the grain size of the billet. The billet is then forged at a total strain of at least 5%, after which at least a portion of the forging is heat treated at a temperature below the solvus temperature to pin grains within the portion. The entire forging can then be heat treated at a temperature above the solvus temperature of the alloy without coarsening the grains in the portion.

A conductive ink composition is obtained by dispersing, in an organic solvent, a solid material made from metal fine particles each coated with protective colloids each made of at least two organic compounds, the metal fine particles consisting of an alloy containing at least a noble metal. Each of the protective colloids is made from, e.g., a raw material containing an (A) amine and a (B) carboxylic acid. By applying and baking the conductive ink composition, grain growth is restrained. This allows acquirement of a metal film whose surface smoothness is excellent, and whose adhesiveness to an application target is improved as compared with that of a metal film made from a conventional conductive ink composition.

The present invention relates to a permanent magnet manufactured by steps of: pulverizing a magnet raw material into fine particles having a grain size of 3 μm or less; mixing the pulverized magnet raw material with a rust preventive oil in which a high-melting metal element-containing organic compound or a precursor of a high-melting ceramic is dissolved, thereby preparing a slurry; compression molding the slurry to form a molded body; and sintering the molded body.

A catalyst for purification of exhaust gas in which a noble metal is supported on a metal-oxide support wherein, in a oxidation atmosphere, the noble metal exists on the surface of the support in high oxidation state, and the noble metal binds with a cation of the support via an oxygen atom on the surface of the support to form a surface oxide layer and, in a reduction atmosphere, the noble metal exists on the surface of the support in a metal state, and an amount of noble metal exposed at the surface of the support, measured by CO chemisorption, is 10% or more in atomic ratio to a whole amount of the noble metal supported on the support.

A wiring glass substrate includes a glass substrate formed of glass and having a plurality of holes formed at predetermined positions, bumps so formed as to be connected to a conductive material filling the holes and wirings formed on a surface opposite to a surface having the bumps formed thereon and electrically connecting a plurality of connection terminals arranged in intervals different from intervals of the holes to the conductive material. The shape of the conductive material is porous and porous electrodes are bonded to the inner wall surfaces of the holes by an anchor effect to increase the strength of the glass substrate.

The invention relates to a method for welding ferritic stainless steel with trailing intense cooling and aims at the problem that a crystal grain grows and is brittle in the welding process of the ferritic stainless steel. A argon tungsten-arc welding machine is adopted, liquid nitrogen is used in the welding process to conduct welding with trailing intense cooling, and argon is used for protection, so that the problem that the crystal grain grows and is brittle in the welding heat affected zone is effectively prevented, the data are full and accurate, the quality of a welding joint is good, a welding line is good in fusion property and is not easily cracked, the strength of extension of the welding line is up to 481.5MPa, and therefore, the method is a quite ideal method for welding ferritic stainless steel.

The invention discloses a technical process of an X80 steel plate hot extrusion tee. The technical process comprises the following steps: (1) designing chemical compositions of raw materials, selecting agreeable X80 steel plates, controlling the grain size of the X80 steel plates at 11 grade or above; (2) blanking; (3) reel pipe spot welding, selecting agreeable welding rods the chemical compositions and mechanical properties of which are equivalent to or slightly higher than those of a parent material, controlling the interlayer temperature within 200 DEG C, the current between 160A and 190A and the voltage at 30V; (4) flattening; (5) hot press moulding, controlling the heating temperature within 930 DEG C and the temperature of workblank in a furnace lower than 600 DEG C; (6) opening holes for drawing, trimming and shaping and detection; (7) hot treatment, putting welding seams at the same heated layer when a plurality of parts are simultaneously treated in a furnace; and (8) surface cleaning, end part processing and finished product detection. The technical process selects the raw materials with agreeable chemical compositions, reduces the current and the voltage, improves the welding speed and reduces the heat quantity during processing procedures, thus preventing the augmentation of grains and meeting the requirements of the X80 steel plate hot extrusion tee.

Disclosed is a multilayer ceramic electronic component, comprising an element body obtained by stacking dielectric layers (thickness t1) and electrode layers (thickness t2). The dielectric layer (2) includes a compound expressed by ABO3 (A includes Ba, and may include Ca or Sr; and B includes Ti, and may include Zr or Hf), and includes 0.75 to 2.0 moles of MgO, 0.4 to 1.0 mole of an oxide of Y, Dy, Ho and the like in terms of the oxide, and 0.4 to 0.8 mole of SiO2 per 100 moles of the compound. A segregation phase (20) containing Mg is formed in at least a part of an electrode missing portion (30), where the electrode layer is supposed to be formed but no electrode layer is formed. Line coverage of the electrode layer (3) is 60 to 90% and relations of 0.3≦t1≦2.0 and 0.3≦t2<1.0 are fulfilled.