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201results about How to "Extensive control" patented technology

Electronic bill presentment and payment systems and processes

EBPP systems and processes which employ a common document model/data model to accommodate the interests and preferences of billers, customers, financial institutions, other EBPP organizations and others in the context of EBPP specifically and electronic commerce more generally. The common document model/data model allows the biller to outsource billing activities to the EBPP organization while retaining control over the billing information or how or where bills will be presented. Billers are incentivized to use the system because they avoid the expense and effort of building a customized system in house, but get the same advantages of an in house system while leveraging the expertise of an outside EBPP organization who operates across a range of industries, customers, geographical locations and financial fields. The systems also allow billers enhanced opportunities to build brand and customer relationships not offered in paper-based billing systems. Customers are incentivized to use the system because they can pay all or most all of their bills in one place, the place of their choice with bills presented how they choose, and because they may communicate more effectively with billers if and when things go wrong rather than wasting inordinate time on the telephone attempting to sort things out with uninformed people as is often the case in paper based billing systems where the relevant data never seems to catch up with the biller's customer service personnel. The result is a ubiquitous EBPP presence that makes everyone's life easier and better by reducing bill generation and payment burdens.
Owner:FIDELITY INFORMATION SERVICES LLC

Semiconductor device and manufacturing method thereof

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
Owner:SEMICON ENERGY LAB CO LTD

Touch control liquid crystal display device

One inventive aspect is a touch control liquid crystal display device. The device includes a color film substrate, a thin film transistor array substrate, and a liquid crystal layer between the color film substrate and the thin film transistor array substrate. The color film substrate includes a grid-shaped black matrix layer, a touch control layer, and a color film layer. The touch control layer includes metal grid electrodes in a rectangle, where the metal grid electrodes include metal lines intersecting transversely and vertically. In addition, the metal grid electrodes include drive electrodes and sense electrodes. The drive electrodes are connected together through first metal connection lines in a first direction, and the sense electrodes are connected together through second metal connection lines in a second direction. In addition, the projection of the metal grid electrodes falls into the projection of the black matrix layer in the light transmission direction.
Owner:SHANGHAI TIANMA MICRO ELECTRONICS CO LTD

Semiconductor device and manufacturing method thereof

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
Owner:SEMICON ENERGY LAB CO LTD
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