A bonded SOI wafer is manufactured by bonding a bond and a base wafer, each composed of a siliconsingle crystal, via an insulator film, depositing a polycrystalline silicon layer on the bonding surface side of the base wafer, polishing a surface of the polycrystalline silicon layer, forming the insulator film on the bonding surface of the bond wafer, bonding the polished surface of the polycrystalline silicon layer and the bond wafer via the insulator film, and thinning the bonded bond wafer to form an SOI layer; wherein, the base wafer is a siliconsingle crystal wafer having a resistivity of 100 Ω·cm or more, depositing the polycrystalline silicon layer further includes a stage for previously forming an oxide film on the surface of the base wafer on which the polycrystalline silicon layer is deposited, and the polycrystalline silicon layer is deposited at a temperature of 900° C. or more.
The present invention provides compositions and methods for improved local anesthesia and / or analgesia, in which onset of action is rapid, the risk of toxicity is low, and the effect is sustained. More particularly, the present invention provides a combination of at least two ester anesthetics for administration to a subject, where at least one ester anesthetic provides a rapid onset of action and at least one ester anesthetic provides sustained activity. The compositions of the present invention are useful for the production of analgesia and / or anesthesia and are particularly useful for the prophylaxis and / or treatment of pain.