54results about How to "Improve photoelectric response" patented technology

The invention discloses a high-efficiency ternary organic solar cell, which includes a substrate, a cathode, a cathode modification layer, an active layer, an anode modification layer and an anode, wherein the active layer is a polymer electron donor PBDB-T and A blend film of two small molecule electron acceptors, HF‑PCIC and IEICO‑4F. Utilizing the complementary absorption of PBDB-T, HF-PCIC and IEICO-4F, especially by means of IEICO-4F to optimize the morphology of the active layer, the ternary organic solar cell prepared by the present invention realizes a wide spectrum of 300-1000nm Good photoelectric response in the range, compared to PBDB‑T:HF‑PCIC-based binary organic solar cells, the improvement of short-circuit current density is up to 7.2mA / cm 2 , the highest power conversion efficiency (PCE) is 11.20%, which is much higher than the 8.82% of the binary battery. In addition, the ternary organic solar cells also exhibited very low energy loss (0.59 eV), resulting in a high open-circuit voltage for the cells.

The invention discloses a bismuth vanadate electrode co-modified by MOF and HrGO, its preparation method and its application in the field of photoelectric catalysis. The preparation method comprises steps: (1) dissolving bismuth nitrate in nitric acid, and then adding partial Ammonium vanadate and polyvinyl alcohol, ultrasonically obtain the seed solution; the seed solution is smeared on clean conductive glass, dried and calcined, then taken out as the base electrode for use; (2) dissolving bismuth nitrate and ammonium metavanadate in In nitric acid, put the base electrode prepared in step (1), carry out hydrothermal reaction, and calcinate after the reaction to obtain BiVO 4 Electrode; (3) 2-aminoterephthalic acid is dissolved in DMF, and butyl titanate is dissolved in methanol, then above-mentioned two kinds of solutions are mixed and stirred evenly, then add the reduced graphene oxide that obtains through hydrogen plasma treatment Mix well and finally put in the BiVO 4 Electrode, solvothermal reaction to obtain BiVO 4 / NH 2 MIL125‑HrGO composite thin film electrode.

The invention discloses a thin film transistor structured visible blind photoelectric detector. The thin film transistor structured visible blind photoelectric detector comprises a thin film transistor, wherein the thin film transistor comprises a gate, a semiconductor channel and a gate dielectric layer, the gate dielectric layer is arranged between the gate and the semiconductor channel, the thin film transistor structured visible blind photoelectric detector also comprises a layer of transparent complementary type semiconductor thin film and a transparent metal oxide thin film, the complementary type semiconductor thin film is arranged at one side, far away from the gate dielectric layer, of the semiconductor channel layer and is suitably used for forming a pn junction with the semiconductor channel layer, and the metal oxide thin film is arranged between the semiconductor channel layer and the complementary type semiconductor thin film. The invention also discloses a fabrication method of the thin film transistor structured visible blind photoelectric detector. The pn junction formed from the complementary type semiconductor thin film and the semiconductor channel layer can generate a built-in electric field to prevent recombination of photo-induced electrons and photo-induced holes, the service lifetime of a photo-induced carrier is prolonged, and the suppression ratio of ultraviolet visible light is increased.

A kind of new metalloporphyrin complex of the present invention, its structural formula is as follows: also provide the preparation method of above-mentioned metalloporphyrin complex, 5,10,15,20-tetrakis (4-hydroxyphenyl) metalloporphyrin The morphine complex is dissolved in tetrahydrofuran, 3-isocyanatopropyltriethoxysilane is added, reflux reaction is carried out under the catalysis of triethylamine, and then hydrochloric acid solution is added to obtain the above-mentioned metalloporphyrin complex. Also provided is a preparation method of a porphyrin composite photoelectric thin film, adding hydrochloric acid solution to the tetrahydrofuran solution of the above-mentioned metalloporphyrin complex compound for reaction, and coating the obtained solution on a substrate to obtain a porphyrin composite photoelectric thin film . The invention realizes carrier transmission between multilayer self-assembled organic thin film layers, thereby improving the photoelectric response of the organic thin film.

The invention relates to the field of material chemistry, in particular to the technical field of photoelectrochemistry and photocatalysis, in particular to a preparation method for a manganese modified titanium dioxide nanotube to enhance a photoelectric response. The preparation method comprises the following basic steps that (1), grinding, cleaning and chemical polishing of a pure titanium sheet are carried out; 2), primary anodization in an ammonium fluoride, glycerol and aqueous solution system is carried out; 3), secondary anodization is carried out in an aqueous solution containing Mn(II) ions; and (4), heat treatment is carried out in an air atmosphere. The preparation method has the beneficial effects that operations are simple, the synergistic composite property between manganeseoxide and titanium dioxide is good, and good doping modification is carried out on titanium dioxide by manganese; and the photoelectrical response performance of a manganese-modified titanium dioxidenanotube array obtained by the preparation method to visible light is enhanced.

This application relates to a heterojunction-based high-efficiency photodetector and a method for preparing the heterojunction, specifically, to the field of photodetectors; the photodetector includes: an electrolyte tank, a reference electrode, a counter electrode, and a heterojunction-based The working electrode of the application; because the tin disulfide structure on the bismuth series compound film in the heterojunction of the photodetector of the present application is arranged vertically, then makes the tin disulfide structure have larger specific surface area, and forms with the bismuth series compound film Van der Waals heterojunction, which in turn enables the separation and transmission of photogenerated carriers to be accelerated during photoelectric detection, thereby improving the photoelectric response of the photodetector of the present application, and thus enabling the detection of the photodetector of the present application Accuracy and sensitivity are greatly improved, so that the photodetector of the present application can be applied in application environments requiring high sensitivity and high accuracy.