193 results about "Polariton" patented technology

A waveguide structure comprises a thin strip of material having a relatively high free charge carrier density surrounded by material having a relatively low free charge carrier density. The width and thickness of the strip are dimensioned such that optical radiation having a wavelength in a predetermined range couples to the strip and propagates along its length as a plasmon-polariton wave. The device includes a waveguide heater for passing a current through the strip to heat it and the surrounding material, so as to vary propagation of the optical radiation, or means for monitoring propagation of the optical radiation to determine a change in temperature of the strip. Some embodiments provide both heating of the strip and monitoring of its temperature.

The invention provides a terahertz light source chip and a manufacturing method thereof, a terahertz light source device and a manufacturing method thereof, and a terahertz light source module and a manufacturing method thereof. The light source chip comprises a two-dimensional electron gas mesa, an electrode, a terahertz resonant cavity and an optical grating, wherein the electrode is formed on the two-dimensional electron gas mesa and used for exciting plasma waves; the terahertz resonant cavity is formed below the two-dimensional electron gas mesa, and a holophote is arranged on the bottom surface of the resonant cavity; the optical grating is formed on the two-dimensional electron gas mesa and used for coupling a plasma wave mode to a terahertz resonant cavity mode so that terahertz wave emission can be generated. Plasma polaritons are formed by strongly coupling the terahertz resonant cavity mode to the plasma wave mode in two-dimensional electron gas under the optical grating, terahertz wave emission can be generated through electric excitation of the plasma polaritons, the problem that terahertz emission is low in frequency or working temperature because of high frequency oscillation relaying on a single electron or quantum jump relaying on a single electron is solved, and the emission frequency range and the working temperature range are widened.

A planar integrated circuit includes a semiconductor substrate having a substrate surface and a trench in the substrate, a waveguide medium in the trench having a top surface and a light propagation axis, the trench having a sufficient depth for the waveguide medium to be at or below said substrate surface, and at least one Schottky barrier electrode formed on the top surface of said waveguide medium and defining a Schottky barrier detector consisting of the electrode and the portion of the waveguide medium underlying the Schottky barrier electrode, at least the underlying portion of the waveguide medium being a semiconductor and defining an electrode-semiconductor interface parallel to the light propagation axis so that light of a predetermined wavelength from said waveguide medium propagates along the interface as a plasmon-polariton wave.

The invention provides a terahertz modulator based on low-dimension electron plasma waves, a manufacturing method thereof and a high-speed modulation method. The terahertz modulator comprises a plasmon and a resonant cavity. The resonance absorption mechanism is caused by electronic collective oscillation (plasma waves, namely Plasmon). In order to increase the coupling strength of the plasma waves and the plasmon, a GaN / AlGaN high-electronic-mobility transistor structure with a raster grid is integrated in a terahertz Fabry-Perot resonant cavity, plasmon polariton is formed through strong coupling of the plasmon and the resonant cavity mode. By means of the strong coupling effect, the transmission coefficient of the resonant cavity mode is the maximum at the resonance point, resonance conditions of the plasmon and the resonant cavity mode are adjusted and controlled by changing the raster pressure, and efficient and high-speed modulation for terahertz waves is achieved. The working principle and the achieving technology of the device are introduced in detail, and a good solution is provided for relevant applications.

A Schottky barrier photodetector comprises a waveguide structure formed by a thin strip of material having a relatively high free charge carrier density, for example a conductor or certain classes of highly-doped semiconductor, surrounded by material having a relatively low free charge carrier density, the material on at least one side of the strip comprising a semiconductor, the strip having finite width and thickness with dimensions such that optical radiation couples to the strip and propagates along the length of the strip as a plasmon-polariton wave, light for detection being coupled to one end of the strip to propagate along the strip as said plasmon-polariton wave, ohmic contact means applied to the semiconductor material and at least one electrode means connected to the strip for applying bias to the Schottky barrier and extracting a photodetector current corresponding to the light applied to the photodetector. Where the strip of material is a flat, thin strip, the device will be polarisation dependent. Substantially polarisation-independent operation maybe achieved by using a strip whose width is of the same order as its thickness.