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Ultraviolet light detector based on neutral particle beam (NPB) and black neutron detector

A detector and ultraviolet light technology, applied in the field of optoelectronic information, can solve the problems of small photoelectric response, complex process, high cost, etc., and achieve the effect of increasing the contact surface, improving photoelectric response, and improving efficiency

Inactive Publication Date: 2011-02-02
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Ultraviolet light detectors are currently mainly made of inorganic wide-bandgap semiconductor materials. Although they have the advantages of small size, small dark current, large photoelectric response, and long life, they have expensive manufacturing equipment, complicated processes, high costs, and limited selection of materials. and other shortcomings
The recently developed publication number is CN101604731A, and the title of the invention is "An Organic Thin Film Ultraviolet Detector", which discloses an organic thin film ultraviolet detector with a layered structure of hole transport materials and electron transport materials, with a small contact area. Low photocurrent generation efficiency and small photoelectric response

Method used

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  • Ultraviolet light detector based on neutral particle beam (NPB) and black neutron detector
  • Ultraviolet light detector based on neutral particle beam (NPB) and black neutron detector
  • Ultraviolet light detector based on neutral particle beam (NPB) and black neutron detector

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Effect test

Embodiment approach 1

[0014] On the ITO conductive glass anode 4 substrate, directly vacuum-deposit a mixed layer of 80nm NPB and BND, with a mass ratio of 4:1, and then vacuum-deposit a lithium fluoride cathode modification layer 2 with a thickness of 0.5nm, with a thickness of 100nm Aluminum metal thin film cathode 1 .

Embodiment approach 2

[0016] On the ITO conductive glass anode 4 substrate, the mixed layer of 100nm NPB and BND is vacuum evaporated directly, and its mass ratio is 4: 1, and then the lithium fluoride cathode modification layer 2 with a thickness of 1nm is vacuum evaporated, and the thickness is 100nm. Aluminum Metal Thin Film Cathode 1.

Embodiment approach 3

[0018] On the ITO conductive glass anode 4 substrate, the mixed layer of 120nm NPB and BND is directly vacuum evaporated, and its mass ratio is 4: 1, and then the lithium fluoride cathode modification layer 2 with a thickness of 2nm is vacuum evaporated, and the thickness is 150nm. Aluminum Metal Thin Film Cathode 1.

[0019] The organic ultraviolet photodetector that makes according to above-mentioned embodiment 2, the spectral response curve under -3V bias voltage is as follows figure 2 As shown, its response range is in the ultraviolet region between 300nm and 400nm, and its responsivity is 57.5mA / W under the irradiation of 350nm light.

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Abstract

The invention discloses an ultraviolet light detector based on a neutral particle beam (NPB) and a black neutron detector, which belongs to the field of photoelectronic information and is mainly applied to the fields of astrophysics analysis, solar irradiation and atmospheric ozone layer study, environment monitoring and forecasting, medicine, sanitation and the like. In the invention, a hole-transmission material NPB and electronic transmission material BND functional layer, a lithium fluoride cathode modifying layer (2) and an aluminum film cathode (1) are plated on an indium tin oxide (ITO) conducting glass anode (4) by evaporation under vacuum in turn, wherein the thickness of the NPB and BND combined layer is 80 to 120nm, and the mass ratio is 4:1. The ultraviolet light detector can detect ultraviolet light with a wavelength ranging from 300 to 400nm. The ultraviolet detector has the characteristics of low cost, low working voltage, simplicity, easy manufacturing process, high photoelectric current efficiency and large photoelectric response.

Description

technical field [0001] The invention belongs to the field of optoelectronic information and relates to an organic ultraviolet light detector, which is mainly used for producing an organic ultraviolet light detector with low noise and high response. Background technique [0002] Ultraviolet light detectors are widely used in astrophysical analysis, solar radiation and atmospheric ozone layer research, environmental monitoring and forecasting, medical and health and other fields. Its research work is of great significance to the development of information highways, national defense construction, and national economic and social development. . UV light detectors have various structures such as p-n junction type, p-i-n type, metal / semiconductor / metal type, etc. Ultraviolet light detectors are currently mainly made of inorganic wide-bandgap semiconductor materials. Although they have the advantages of small size, small dark current, large photoelectric response, and long life, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L51/42G01J1/42
CPCY02E10/549
Inventor 代千张希清孙建王永生
Owner BEIJING JIAOTONG UNIV
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