Ultraviolet light detector based on neutral particle beam (NPB) and black neutron detector
A detector and ultraviolet light technology, applied in the field of optoelectronic information, can solve the problems of small photoelectric response, complex process, high cost, etc., and achieve the effect of increasing the contact surface, improving photoelectric response, and improving efficiency
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Embodiment approach 1
[0014] On the ITO conductive glass anode 4 substrate, directly vacuum-deposit a mixed layer of 80nm NPB and BND, with a mass ratio of 4:1, and then vacuum-deposit a lithium fluoride cathode modification layer 2 with a thickness of 0.5nm, with a thickness of 100nm Aluminum metal thin film cathode 1 .
Embodiment approach 2
[0016] On the ITO conductive glass anode 4 substrate, the mixed layer of 100nm NPB and BND is vacuum evaporated directly, and its mass ratio is 4: 1, and then the lithium fluoride cathode modification layer 2 with a thickness of 1nm is vacuum evaporated, and the thickness is 100nm. Aluminum Metal Thin Film Cathode 1.
Embodiment approach 3
[0018] On the ITO conductive glass anode 4 substrate, the mixed layer of 120nm NPB and BND is directly vacuum evaporated, and its mass ratio is 4: 1, and then the lithium fluoride cathode modification layer 2 with a thickness of 2nm is vacuum evaporated, and the thickness is 150nm. Aluminum Metal Thin Film Cathode 1.
[0019] The organic ultraviolet photodetector that makes according to above-mentioned embodiment 2, the spectral response curve under -3V bias voltage is as follows figure 2 As shown, its response range is in the ultraviolet region between 300nm and 400nm, and its responsivity is 57.5mA / W under the irradiation of 350nm light.
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