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In-doped CdS film, preparation method thereof and prepared CIGS battery

A technology for thin films and solar cells, applied in the field of solar cells, can solve the problems of inability to dope In, and achieve the effect of enhancing the photoelectric response

Active Publication Date: 2021-03-26
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention proposes an In-doped CdS film, a preparation method and a prepared CIGS battery, which solves the problem of In2S3 is much smaller than that of CdS, which leads to the problem that In cannot be doped

Method used

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  • In-doped CdS film, preparation method thereof and prepared CIGS battery
  • In-doped CdS film, preparation method thereof and prepared CIGS battery
  • In-doped CdS film, preparation method thereof and prepared CIGS battery

Examples

Experimental program
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Effect test

Embodiment 1

[0039] The structure of the CIGS battery prepared in this embodiment is: soda lime glass substrate / Mo back electrode / CIGS absorber layer / In-doped CdS buffer layer / intrinsic ZnO and Al-doped ZnO window layer / Ni-Al top electrode (such as figure 1 shown).

[0040] The preparation method of each layer in the battery is as described above, wherein the process for preparing the In-doped CdS buffer layer with the CBD method is as follows:

[0041] Step 1. Weigh 4.5672 g of thiourea and put it into a beaker, measure 50 ml of water three times, and stir in a heating mantle at 60 °C and 500 rpm until completely dissolved;

[0042] Step two, weigh 0.1432 g of In(NO 3 ) 3 4.5 H 2 O was put into a beaker, and 25 ml of water was measured three times, and stirred in a heating mantle at 500 rpm until completely dissolved;

[0043] Step three, weigh 0.2313 g of Cd(NO 3 ) 3 4H 2 O was put into a beaker, and 50 ml of water was measured three times, and stirred in a heating mantle at 500 r...

Embodiment 2

[0053] The structure of the CIGS battery prepared in this example is: soda-lime glass substrate / Mo back electrode / CIGS absorber layer / In-doped CdS buffer layer / intrinsic ZnO and Al-doped ZnO window layer / Ni-Al top electrode. The preparation method of each layer in the battery is consistent with the foregoing, wherein the process for preparing the In-doped CdS buffer layer by the CBD method is as follows:

[0054] Step 1. Weigh 4.5672 g of thiourea and put it into a beaker, measure 50 ml of water three times, and stir in a heating mantle at 60 °C and 500 rpm until completely dissolved;

[0055] Step two, weigh 0.1432 g of In(NO 3 ) 3 4.5 H 2 O was put into a beaker, and 25 ml of water was measured three times, and stirred in a heating mantle at 500 rpm until completely dissolved;

[0056] Step three, weigh 0.2313 g of Cd(NO 3 ) 3 4H 2 O was put into a beaker, and 50 ml of water was measured three times, and stirred in a heating mantle at 500 rpm until completely dissolved...

Embodiment 3

[0062] The structure of the CIGS battery prepared in this example is: soda-lime glass substrate / Mo back electrode / CIGS absorber layer / In-doped CdS buffer layer / intrinsic ZnO and Al-doped ZnO window layer / Ni-Al top electrode. The preparation method of each layer in the battery is consistent with the foregoing, wherein the process for preparing the In-doped CdS buffer layer by the CBD method is as follows:

[0063] Step 1. Weigh 4.5672 g of thiourea and put it into a beaker, measure 50 ml of water three times, and stir in a heating mantle at 60 °C and 500 rpm until completely dissolved;

[0064] Step two, weigh 0.1432 g of In(NO 3 ) 3 4.5 H 2 O was put into a beaker, and 25 ml of water was measured three times, and stirred in a heating mantle at 500 rpm until completely dissolved;

[0065] Step three, weigh 0.2313 g of Cd(NO 3 ) 3 4H 2 O was put into a beaker, and 50 ml of water was measured three times, and stirred in a heating mantle at 500 rpm until completely dissolved...

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Abstract

The invention provides an In-doped CdS thin film, a preparation method thereof and a prepared CIGS battery. The preparation method comprises the following steps: (1) preparing a CIGS absorption layerthin film; (2) adding ammonia water and a thiourea solution into a cadmium nitrate solution, mixing, adding the CIGS absorption layer film prepared in the step (1), and heating in a water bath; (3) adding an In(NO3)3 solution into a constant-pressure funnel, diluting, dropwise adding the solution into the hydrothermal solution, and controlling the dropping speed to be 4 seconds per drop; and (4) after dropwise adding, obtaining the In-doped CdS film. According to the method, the In(NO3)3 solution is continuously dropwise added in the process of preparing a CdS buffer layer, the ratio of In toCd in the buffer layer is controlled by adjusting the concentration and the dropping speed of In ions in the solution, and the flat and compact In-doped CdS film is prepared. The photoelectric conversion efficiency of the CIGS battery using the In-doped CdS film as the buffer layer is improved from 13.43% to 16.39%.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to an In-doped CdS thin film, a preparation method and a prepared CIGS cell. Background technique [0002] Copper indium gallium selenide thin film solar cells are based on polycrystalline CuIn 1-x Ga x Se 2 (CIGS) semiconductor thin film solar cells as the absorber. A typical CIGS cell structure is attached figure 1 As shown, it consists of soda-lime glass substrate, Mo back electrode, CIGS absorber layer, CdS buffer layer, intrinsic ZnO and Al-doped ZnO window layer, and Ni-Al top electrode. [0003] CdS film is currently the most widely used buffer layer for CIGS solar cells with the highest efficiency. It is an n-type semiconductor with a direct band gap of 2.4 eV. The CdS thin film forms a p-n junction with the p-type CIGS absorbing layer thin film, which constitutes the most basic unit of the CIGS thin film solar cell. Therefore, preparing a high-quality CdS buffer layer on t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/0296H01L31/032H01L31/0352H01L31/0392H01L31/068
CPCH01L21/02557H01L21/02568H01L21/02628H01L21/02584H01L31/02963H01L31/0322H01L31/03923H01L31/0682H01L31/035272Y02E10/547Y02E10/541
Inventor 周正基袁胜杰武四新常倩倩
Owner HENAN UNIVERSITY
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