The invention discloses a
bismuth scandate-
lead titanate high-temperature piezoelectric
ceramic material. The
bismuth scandate-
lead titanate high-temperature piezoelectric
ceramic material comprises a matrix with the
chemical formula of xBiScO3-(1-x)PbTiO3 and
bismuth trioxide (Bi2O3) in an amount which is less than 0.4 percent of the total weight of the matrix. The bismuth scandate-
lead titanate high-temperature piezoelectric
ceramic material is prepared by adding excess Bi2O3 into raw materials of Sc2O3, Bi2O3, Pb3O4 and TiO2 in the metering ratio according to the
chemical formula of xBiScO3-(1-x)PbTiO3, wherein x is 0.35 to 0.38; and the using amount of the excess Bi2O3 is 0.1 to 0.4 percent of the total weight of the raw materials of Sc2O3, Bi2O3, Pb3O4 and TiO2 in the metering ratio according to the
chemical formula of xBiScO3-(1-x)PbTiO3. The bismuth scandate-lead
titanate high-temperature piezoelectric ceramic material solves the problems that
ceramic sintering temperature is increased and piezoelectric and
dielectric properties are reduced due to deviation of a stoichiometric ratio caused by bismuth volatilization in the
sintering process of BSPT ceramic, and has high
Curie temperature, excellent piezoelectric property and an actual application value in high-temperature
electronic equipment. The invention also discloses a preparation method for the bismuth scandate-lead
titanate high-temperature piezoelectric ceramic material. In the preparation method, the piezoelectric ceramic material is prepared by synthesizing and
sintering at lower temperature, so production cost is reduced, process steps are simplified, and the material has actual application value.