The invention discloses a piezoelectric
resonator structure, which comprises a substrate, an
acoustic reflection layer, a first
electrode, a piezoelectric layer and a second
electrode, which are provided with a top surface, a bottom surface, a first
tail end, a second
tail end and a middle part respectively; the substrate, the
acoustic reflection layer, the first
electrode, the piezoelectric layer and the second electrode are arranged in turn from the bottom to the top; and an overlapping region of the substrate, the
acoustic reflection layer, the first electrode, the piezoelectric layer and the second electrode is defined as an effective excitation region. A series of air gaps and interference structures are formed at the first
tail ends and the second tail ends of the piezoelectric layer and the second electrode to improve the
electrical performance of a
resonator. The piezoelectric
resonator structure greatly improves the Q value of the resonator nearby a
parallel resonance frequency, meanwhile does not affect the Q value and
parasitic mode strength of the resonator nearby a series
resonance frequency, and does not reduce the
electromechanical coupling coefficient of the resonator. A filter adopting the resonator structure has more predominant electrical properties such as lower pass-band
insertion loss and the like.