372 results about "Surface acoustic wave resonators" patented technology

Either one of a transmission terminal connected to a transmission filter and a receiving terminal connected to a receiving filter is a balanced type terminal, and the other is an unbalanced type terminal. The transmission filter and the receiving filter includes surface acoustic wave resonators or film bulk acoustic resonators. The balanced type terminal is connected to a longitudinal mode coupled surface acoustic wave filter.

The invention relates to a taste cell sensor using a surface acoustic wave resonator. The taste cell sensor includes the surface acoustic wave resonator, which is encapsulated in a metal shell by vacuum. The surface acoustic wave resonator adopts ST cut quartz as a piezoelectric substrate material, is prepared by a photolithography process, the emitted surface acoustic frequency is 433MHZ. The taste cell sensor also includes a silk-screen printing carbon electrode, which is in series connection with the surface acoustic wave resonator. The silk-screen printing carbon electrode is firstly modified by amino acid and then coated with an NCI-H716 cell suspension solution. The taste cell sensor provided by the invention has the advantages of small volume, practicability and convenience, fast electrode response, high sensitivity, good batch repeatability, low cost and the like, can achieve high frequency, and can realize rapid real-time detection. The preparation method has the characteristics of simple preparation process, small material consumption, high process repeatability and controllability, and is convenient for batch production.

A surface acoustic wave filter device uses a Rayleigh wave as a main mode, and includes a ladder type surface acoustic wave filter unit. A thickness of a dielectric layer in a surface acoustic wave resonator configuring a series arm resonator is different from thickness of a dielectric layer in a surface acoustic wave resonator configuring a parallel arm resonator. A propagation orientation of a surface acoustic wave in the surface acoustic wave resonator configuring the series arm resonator is different from a propagation orientation of a surface acoustic wave in the surface acoustic wave resonator configuring the parallel arm resonator.

The invention discloses a magnetoelectric surface-acoustic-wave magnetic-field sensor and a manufacturing method thereof and belongs to the technical field of electronic function materials and devices. The magnetoelectric surface-acoustic-wave magnetic-field sensor comprises a magnetostriction substrate, a metal buffer layer and a piezoelectric film, wherein the metal buffer layer is made of metallic titanium or chromium and arranged between the magnetostriction substrate and the piezoelectric film, interdigital transducers with two ports are arranged on the upper surface of the piezoelectric film, and the interdigital transducers and the piezoelectric film constitute a surface-acoustic-wave resonator. Each interdigital transducer comprises an input electrode, an output electrode, an input-end reflecting grating and an output-end reflecting grating, wherein the input-end reflecting grating is arranged on the outer side of the input electrode, and the output-end reflecting grating is arranged on the outer side of the output electrode. The thickness of the piezoelectric film ranges from 0.3-1 micrometer, the thickness of the magnetostriction substrate is larger than two times of wavelength of the surface-acoustic waves. By the aid of the high-orientation piezoelectric film and magnetostriction strips with uniaxial anisotropism and Young's modulus effect, the sensor is miniaturized, high in sensitivity and good in consistency. The manufacturing method is simple and applicable to probing of magnetic fields.

A sensor assembly for monitoring physical parameters in a given environment, such as in a tire or wheel assembly, includes an improved interface between sensor components. The sensor assembly includes a piezoelectric substrate on which resonator elements, such as surface acoustic wave (SAW) resonators are provided. The resonators are configured to produce electrical output at predetermined resonator frequency ranges that can be monitored to determined such information as pressure and temperature to which such devices are subjected. A projection is formed on a surface of the piezoelectric substrate, which selectively interfaces with a recessed surface area in a flexible lid casing component. The lid casing component and a rigid base casing component combine to form an enclosed package for the sensor assembly. An antenna may be coupled to the sensor assembly to facilitate receipt and / or transmission of communicated signals.

A surface acoustic wave resonator includes: an IDT which is disposed on a quartz substrate with Euler angles of (−1°≦φ≦1°, 117°≦θ≦142°, 42.79°≦|ψ|≦49.57°, which is made of Al or alloy including Al as a main component and which excites a surface acoustic wave in an upper mode of a stop band; and an inter-electrode-finger groove which is formed by recessing the quartz substrate between electrode fingers which form the IDT. Here, the following expression is satisfied:0.01λ≦G  (1),where λ represents a wavelength of the surface acoustic wave and G represents a depth of the inter-electrode-finger groove. The depth G of the inter-electrode-finger groove and a line occupancy η of the IDT satisfy the following expression:-2.5×Gλ+0.675≦η≦-2.5×Gλ+0.775(5)and a number of pairs N of the electrode fingers in the IDT is in the range of the following expression:160≦N≦220  (19).

A surface acoustic wave (SAW) resonator and a SAW oscillator and an electronic apparatus including the resonator are to be provided. A SAW resonator includes: an IDT exciting a SAW using a quartz crystal substrate of Euler angles (−1.5°≦φ≦1 / 5°, 117°≦θ≦142°, 42.79°≦|ψ|≦49.57°; one pair of reflection units arranged so as allow the IDT to be disposed therebetween; and grooves acquired by depressing the quartz crystal substrate located between electrode fingers. When a wavelength of the SAW is λ, and a depth of the grooves is G, “0.01λ≦G” is satisfied.

A surface-acoustic-wave filter couples a two-port surface-acoustic-wave resonator filter circuit coupled in parallel or in series with a two-port impedance circuit. The two-port impedance circuit has an impedance that creates a pole of attenuation, by making the open-circuit impedance of the surface-acoustic-wave filter equal to the short-circuit impedance. High attenuation over a wide range of stopband frequencies is obtained in this way, combined with steep roll-off between the passband and stopband.

The present invention provides a surface acoustic wave filter and others that reduce ripples in a reception frequency band while ensuring sufficient attenuation in a transmission frequency band. A surface acoustic wave filter includes a surface acoustic wave resonator that allows a reception frequency band to pass while attenuating a transmission frequency band, and a surface acoustic wave filter connected in series with the surface acoustic wave resonator to allow the reception frequency band to pass while attenuating the transmission frequency band. An inductor is connected to one end of the surface acoustic wave resonator, a connection point between the surface acoustic wave filter and the surface acoustic wave resonator, and / or the other end of the surface acoustic wave resonator.

A surface acoustic wave resonator includes a piezoelectric substrate and an interdigital transducer disposed thereon. The surface acoustic wave resonator operates using a shear horizontal wave, and the interdigital transducer includes an electrode film made of a metal containing W or Ta as its main component and a thin film made of Al.

An improved SAW resonator fabricated using RF-CMOS technology is disclosed. The SAW resonator is capable of a resonant frequency of from about 1 GHz to about 3.12 GHz. Several different embodiments namely both single and double port resonators implemented in standard CMOS (0.6 μm) and RF-CMOS (0.18 μm) technologies are presented.

The invention relates to a sensor suitable for passive wireless measurement of torque. The sensor has temperature and vibration compensation functions. The passive wireless torque sensor of the present invention includes four surface acoustic wave resonators with different center frequencies, a small antenna and an elastic shaft of the sensor. The surface acoustic wave resonator of this sensor uses quartz as the substrate of the resonator. The interdigital transducer and reflection grid are deposited on the substrate, and the piezoelectric effect and inverse piezoelectric effect are used to excite and receive the surface acoustic wave. The four surface acoustic wave resonators of the torque sensor are pasted on the elastic shaft according to the design angle. When torque is applied to the elastic shaft, the four surface acoustic wave resonators can respectively detect the deformation in the pasting direction. The four deformations can be obtained by processing the temperature , Torque information after vibration compensation. The four surface acoustic wave resonators are connected with the antenna, which can realize the wireless transmission of force state information. The invention has the advantages of simple structure, small size, light weight, high precision, passive wireless, and is suitable for passive wireless measurement of torque of important shaft parts such as aerospace, transmission machinery, precision machine tools, and heavy vehicles.

The invention provides a surface acoustic wave resonator and a surface acoustic wave oscillator with a good frequency temperature characteristic. A SAW resonator (10) which, using a quartz crystal substrate (30) with Euler angles (117 DEG<=theta<=142 DEG, and 42.79 DEG<=Psi<=49.57 DEG, includes an IDT (10) which excites a stop band upper end mode SAW, and grooves (32) hollowed out of the substrate positioned between electrode fingers (18) configuring the IDT, wherein, when the wavelength of the SAW is [lambda] and the depth of the inter-electrode finger grooves is G, [lambda] and G satisfy the relationship of 0.01[lambda]<=G and wherein, when the line occupation rate of the IDT is [eta], the groove (32) depth G and line occupation rate [eta] satisfy the relationships of - 2.5xG / Lambda+0.675<=-2.5xG / Lambda+0.775.

A surface acoustic wave device includes front stage and rear stage surface acoustic wave elements, a signal wiring connecting between the front stage and rear stage surface acoustic wave elements, a reference potential wiring connected with the rear stage surface acoustic wave element and a capacitor made of an insulator interposed between the signal wiring and the reference potential wiring. A surface acoustic wave device includes a front stage surface acoustic wave resonator, a rear stage surface acoustic wave element, a signal wiring connecting between the front stage surface acoustic wave resonator and the rear stage surface acoustic wave element, a reference potential wiring connected with the rear stage surface acoustic wave element and a capacitor made of an insulator interposed between the signal wiring and the reference potential wiring. A communication device includes the surface acoustic wave device described above, a receiver circuit or a transmitter circuit.

The invention discloses an SAW (Surface Acoustic Wave) device of a bus bar doubled as a reflecting grating type IDT (Interdigital Transducer) structure, comprising a surface acoustic wave filter and a surface acoustic wave resonator. The surface acoustic wave filter and the surface acoustic wave resonator comprise a packaging shell and tube cores of the surface acoustic wave filter and the surface acoustic wave resonator, wherein the two tube cores are electrically connected in the packing shell by using a conducting wire; and the tube cores comprise an input interdigital transducer with a bus bar doubled as a reflecting grating and an output interdigital transducer with a bus bar doubled as a reflecting grating, and the input interdigital transducer and the output interdigital transducer are etched on the surface of a piezoelectric monocrystal or a piezoelectric film. The bus bar doubled as the reflecting grating is in a triangular, circular or elliptic structure. Under the condition of same tube core areas, interdigital numbers and coupling hole diameters of the surface acoustic wave filter and the surface acoustic wave resonator with the IDT structure design, the sidelobe suppression is improved by more than 9dB, and the insertion loss is lowered by more than 12dB.

A surface acoustic wave device that has surface acoustic wave resonators connected in a multi-stage ladder arrangement, includes: two or more different pitches of comb-like drive electrodes of parallel-arm resonators (P1˜P3) and two or more different pitches of comb-like drive electrodes of series-arm resonators (S1˜S3); reflection electrodes (12, 14) placed at either side of a comb-like drive electrode having a pitch different from that of said comb-like drive electrode; and two or more different electrostatic capacitances of parallel-arm resonators and two or more different electrostatic capacitances of series-arm resonators.

A surface acoustic wave resonator includes a piezoelectric substrate, and a SAW resonator having an interdigital transducer. The interdigital transducer satisfies 0.15L≦W≦0.45L where W is the total of widths of all electrode fingers that form the interdigital transducer, and L is a length of the said interdigital transducer in a direction of SAW propagation.

A longitudinally coupled leaky surface acoustic wave (LSAW) resonator filter has a wide bandwidth, low insertion loss and return loss characteristics, and high power handling capability. The LSAW resonator filter includes a plurality of longitudinally coupled LSAW resonator tracks disposed upon a piezoelectric substrate and connected in series. The resonator tracks each include reflective gratings and interdigital transducers (IDTs) disposed end-to-end. Acoustic resonant cavities are formed between each IDT and its neighboring IDTs or gratings by chirping the fingers of the IDT in the vicinity of the cavities. Phase discontinuity is eliminated; reflective bulk acoustic wave scattering is reduced; and improved insertion loss and power handling capability are achieved.

A surface acoustic wave filter device includes balanced signal terminals, and surface acoustic wave filters respectively connected to the balanced signal terminals, and at least one surface acoustic wave resonator connected between at least one of the balanced signal terminals and a ground terminal.

A SAW filter comprises an IDT disposed on a piezo-electric substrate, wherein the IDT includes comb-shaped electrodes having a plurality of interdigital electrodes arranged in a propagation direction of surface acoustic waves and bus bars for connecting these interdigital electrodes, arranged in opposition, and the interdigital electrodes are crossed with one another. The IDT comprises one or more branch electrodes branched from the interdigital electrode and positioned in a non-overlap zone between an overlap zone at which the interdigital electrodes overlap and the bus bar, and the branch electrode includes a branch electrode body extending in a direction substantially orthogonal to the propagation direction of surface acoustic wave. The SAW filter can be applied to any of a longitudinally coupled multi-mode filter, a ladder type filter, a resonator, a filter having a resonator connected in series to a longitudinally coupled multi-mode filter, and the like. A SAW filter and a SAW resonator highly resistant to damages to the electrodes with high Q and low insertion loss can be provided.

The invention belongs to the technical field of surface acoustic wave sensing technology, particularly to a resonance type surface acoustic wave passive wireless array sensing system; the system comprises a signal transmitting and receiving process unit, and a plurality of sensor units arranged at the same or different space positions, wherein each sensor unit includes a resonance type surface acoustic wave sensor, a matching loop configured with each resonance type surface acoustic wave sensor cooperatively, a radio frequency coding switch unit connected with the matching loop and comprising a radio frequency coding switch, and a sensing antenna connected with the radio frequency switch unit; and the signal transmitting and receiving process unit is responsible for transmitting an intercarrier signal with certain frequency band, controlling breakover or cutoff state of the radio frequency coding switch, and detecting echo frequency characteristics of a surface acoustic wave resonator. The system not only keeps the advantage of the resonance type passive wireless sensor in far operating distance, but also overcomes and breaks through the shortage that the resonance type passive wireless sensor cannot be encoded in large scale.

A vibration detection system comprises a battery-less vibration sensor and an interrogator. The sensor comprises a single port surface acoustic wave resonator. The interrogator continuously transmits a carrier wave signal to the resonator while receiving a wave signal reflected from the resonator. The reflected wave signal includes components other than the transmitted carrier wave signal if the sensor senses a vibration event. Based the reflected wave signal, the interrogator judges whether the vibration event occurs.

A duplexer includes a transmitting filter including serial resonators and parallel resonators connected in a ladder configuration, and a receiving filter. A resonator of the serial resonators and the parallel resonators in the transmitting filter that is arranged closest to a common terminal of the transmitting filter and the transmitting filter includes a surface acoustic wave resonator, and at least one resonator excluding the resonator that is arranged closest to the common terminal includes a film bulk acoustic wave resonator.

In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, the line occupying ratio causing the maximum electromechanical coupling coefficient and the line occupying ratio causing the maximum reflection of the surface acoustic waves in the IDT are different from each other, the center of the IDT has the line occupying ratio causing an increase in electromechanical coupling coefficient in comparison with the edges of the IDT, and the edges of the IDT have the line occupying ratio causing an increase in reflection of the surface acoustic waves in comparison with the center of the IDT.