The invention relates to a
graphene high-frequency nanomechanical
resonator based on a flexible substrate and a preparing technology of the
graphene high-frequency nanomechanical
resonator and belongs to the technical field of communication electronic elements. According to the technology, the shape of a required gate
electrode is etched on the flexible substrate. A
metal layer is evaporated on the surface of the flexible substrate.
Silicon dioxide
sedimentation is conducted on the flexible substrate.
Graphene is transferred to the portion right above the gate
electrode and
photoresist is painted on the gate
electrode in a spiral mode.
Titanium,
platinum and gold are evaporated on a channel of the
graphene so as to serve as a source electrode and a drain electrode. Finally, a whole element is coated with
photoresist and the graphene high-frequency Q nanomechanical
resonator of the flexible substrate can be obtained after
processing. The structure of the graphene high-frequency Q nanomechanical resonator comprises the flexible substrate, a medium layer, the gate electrode and a graphene girder in a sequentially laminated mode. The source electrode and the drain electrode are located at the two sides of the graphene girder. The graphene high-frequency nanomechanical resonator is a
microwave element which has the advantages of being high in frequency, high in quality factors, light, thin, soft, good in shock resistant performance and low in cost.