359results about How to "Shorten the switching time" patented technology

A magnetic device includes a magnetic reference layer with a fixed magnetization direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetization direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarizing layer with a magnetization perpendicular to that of the reference layer, and located out of the plane of the spin polarizing layer if the magnetization of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarizing layer if the magnetization of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarizing layer and the storage layer.

When switching sources, resolutions or refresh rates in a video distribution network, switching times are reduced by maintaining video lock and security authentication between a video switcher and a video sink. The scaler maintains video lock and security authentication by continuing to generate video timing data during switching events. The scaler also facilitates an aesthetically pleasing transition by generating image content data prior to and after the switching event.

When switching sources, resolutions or refresh rates in a video distribution network, switching times are reduced by maintaining video lock and security authentication between a video switcher and a video sink. The scaler maintains video lock and security authentication by continuing to generate video timing data during switching events. The scaler also facilitates an aesthetically pleasing transition by generating image content data prior to and after the switching event.

The present invention provides apparatuses and methods for modulating the transmissivity of electrochromic devices utilizing a controller that provides a continuous potential that may be pulsed to the electrochromic device.

One embodiment of the present invention is to achieve high mobility in a device using an oxide semiconductor and provide a highly reliable display device. An oxide semiconductor layer including a crystal region in which c-axis is aligned in a direction substantially perpendicular to a surface is formed and an oxide insulating layer is formed over and in contact with the oxide semiconductor layer. Oxygen is supplied to the oxide semiconductor layer by third heat treatment. A nitride insulating layer containing hydrogen is formed over the oxide insulating layer and fourth heat treatment is performed, so that hydrogen is supplied at least to an interface between the oxide semiconductor layer and the oxide insulating layer.

An improved n-channel integrated lateral DMOS (10) in which a buried body region (30), beneath and self-aligned to the source (18) and normal body diffusions, provides a low impedance path for holes emitted at the drain region (16). This greatly reduces secondary electron generation, and accordingly reduces the gain of the parasitic PNP bipolar device. The reduced regeneration in turn raises the critical field value, and hence the safe operating area.

The storage system of the present invention has a simple configuration and ensures redundancy of the system. The primary storage control device and the first secondary storage control device are connected by a synchronous read method, and the primary storage control device and the second secondary storage control device are connected by an asynchronous read method. The primary storage control device sets a management number in the update data and saves a journal data. The primary storage control device associates the management number with the update data and transmits them to the first secondary storage control device. The first secondary storage control device writes the update data to the first secondary volume, associates the management number with the storage destination address of the update data and stores them in the maintenance table. If the primary storage control device stops, the first secondary storage control device becomes anew a primary storage control device. The first secondary storage control device is connected to the second secondary storage control device by an asynchronous read method.

Various configurations of micromachined optomechanical switching cells are disclosed herein. In accordance with the invention, an optomechanical switching cell is provided which includes an actuator positioned on a substrate and a mirror coupled to the actuator. The switching cell also includes an electrode disposed upon the substrate under the actuator. An insulator may also be interposed between the substrate and the electrode. In another aspect of the present invention the switching cell includes a latch having a first end region connected to the substrate and a second end region engaged by the mirror.

One embodiment of the present invention is to achieve high mobility in a device using an oxide semiconductor and provide a highly reliable display device. An oxide semiconductor layer including a crystal region in which c-axis is aligned in a direction substantially perpendicular to a surface is formed and an oxide insulating layer is formed over and in contact with the oxide semiconductor layer. Oxygen is supplied to the oxide semiconductor layer by third heat treatment. A nitride insulating layer containing hydrogen is formed over the oxide insulating layer and fourth heat treatment is performed, so that hydrogen is supplied at least to an interface between the oxide semiconductor layer and the oxide insulating layer.

A FinFET device and a method of lowering a gate capacitance and extrinsic resistance in a field effect transistor, wherein the method comprises forming an isolation layer comprising a BOX layer over a substrate, configuring source / drain regions above the isolation layer, forming a fin structure over the isolation layer, configuring a first gate electrode adjacent to the fin structure, disposing a gate insulator between the first gate electrode and the fin structure, positioning a second gate electrode transverse to the first gate electrode, and depositing a third gate electrode on the fin structure, the first gate electrode, and the second gate electrode, wherein the isolation layer is formed beneath the insulator, the first gate electrode, and the fin structure. The method further comprises sandwiching the second gate electrode with a dielectric material. The fin structure is formed by depositing an oxide layer over a silicon layer.

Method and system for efficient power control with multiple modes. According to an embodiment, the present invention provides a power system with selectable power modes. The power system includes a first terminal for outputting energy, and the first terminal is electrically coupled to a load. The system also includes a pulse-frequency modulation (PFM) component that is configured to adjust a pulse frequency based on the load. The system additionally includes a pulse-width modulation (PWM) component that is configured to adjust a pulse width based on the load. The system further includes a switch that is electrically coupled to the first terminal. Also, the system includes a control component, the control component being configured to provide a control signal that is capable of causing the switch to be turned on or off. The control signal is associated with an output of the PWM component and the pulse width if an output is greater than a predetermined value. The control signal is associated with an output of the PFM component and the pulse frequency if an output is lower than a predetermined value.

Various configurations of optomechanical matrix and broadcast switches are disclosed herein. One such optomechanical matrix switch includes a substrate and a plurality of optomechanical switching cells coupled thereto. Each of the optomechanical switching cells includes a mirror and an actuator. The matrix switch further includes an array of collimator elements, each of the collimator elements being in optical alignment with one of the optomechanical switching cells. Also disclosed herein is a distributed matrix switch including first and second optomechanical matrix switches. The first and second optomechanical matrix switches respectively include first and second pluralities of optomechanical switching cells mounted upon first and second substrates. A collimator array is interposed between the first and second matrix switches in optical alignment with the first and second pluralities of optomechanical switching cells.

Method and system for efficient power control with multiple modes. According to an embodiment, the present invention provides a power system with selectable power modes. The power system includes a first terminal for outputting energy, and the first terminal is electrically coupled to a load. The system also includes a pulse-frequency modulation (PFM) component that is configured to adjust a pulse frequency based on the load. The system additionally includes a pulse-width modulation (PWM) component that is configured to adjust a pulse width based on the load. The system further includes a switch that is electrically coupled to the first terminal. Also, the system includes a control component, the control component being configured to provide a control signal that is capable of causing the switch to be turned on or off. The control signal is associated with an output of the PWM component and the pulse width if an output is greater than a predetermined value. The control signal is associated with an output of the PFM component and the pulse frequency if an output is lower than a predetermined value.

The object of providing a non-volatile semiconductor memory that stands out by good scalability and a high retention time as well as ensures low switching voltages at low switching times and achieves a great number of switching cycles at good temperature stability is solved by the present invention with a semiconductor memory whose memory cells comprise at least one silicon matrix material layer with open or disturbed nanocrystalline or amorphous network structures and structural voids which has a resistively switching property between two stable states, utilizing the ion drift in the silicon matrix material layer. The memory concept suggested in the present invention thus offers an alternative to the flash and DRAM memory concepts since it is not based on the storing of charges, but on the difference of the electric resistance between two stable states that are caused by the mobility of ions in the amorphous silicon matrix material with an externally applied electric field.

Magnetically and electromagnetically driven MEMS devices for reflecting light signals and for switching radio frequency (RF) signals are provided. In a preferred embodiment, a light reflecting device such as a mirror or micro-scanner comprises a plate operative to reflect light and at least two conductive flexural actuators connected to the plate and to a substrate and operative to impart a rotation or tilt motion to the plate under a force arising from the interaction of a current passing through the conductive flexural actuators and a magnetic field parallel to the substrate. An RF switch comprises a substrate and a membrane having a longitudinal dimension and a lateral dimension, the membrane positioned substantially parallel to and attached to the substrate and operative to provide at least two switching positions in response to actuation by a Lorenz force acting on it.

A number of micromachined optomechanical switching cells and matrix switches including such switching cells are disclosed herein. One optomechanical switching cell of the present invention includes a parallel plate actuator positioned on a substrate. A mirror coupled to the actuator is disposed to selectively redirect an incident optical beam. The present invention also contemplates an optomechanical matrix switch including a substrate and a plurality of optomechanical switching cells coupled thereto. The matrix switch further includes an arrangement for monitoring the optical power incident upon, and output by, the matrix switch.

A display apparatus is disclosed that includes two opposing substrates, an electrophoretic element arranged between the substrates; pixel electrodes that are arranged on one of the substrates and are divided into pixel groups including at least a first pixel group and a second pixel group, a common electrode that is arranged on the other substrate, and a control unit that controls frame display operations of the pixel groups. The control unit controls the first pixel group to start frame display operations for displaying a frame and then controls the second pixel group to start frame display operations for displaying another frame before the frame display operations of the first pixel group are completed.

Switching process at the occurrence of a path trouble is performed more quickly to reduce the number of packet discards during a traffic transition from a currently used system path to a standby system path within a section to be protected. An OLT (210-W) refers to the DBA information of a PON section and, if receiving no CCM frame at a timing at which the same should be received, then determines that some trouble has occurred on the path (S801) and transmits, to an OAM-compliant NE (200-Z), an application-for-switching frame (1501) to notify the OAM-compliant NE (200-Z) of the abnormal condition. The OAM-compliant NE (200-Z) monitors the occurrence of the trouble within the PON section nearly in real time, starts a switching process (S802) and generates and transmits a standby-system delivery request (321) (S302, S803). An OAM-compliant NE (200-A) switches the communication path to the standby-system passing through an OLT (210-P).

A method and apparatus for duplex protection switching by using a single splitter in a passive optical network (PON) are provided. The apparatus for duplex protection switching in a PON, in which a single optical line termination (OLT) and many optical network terminations (ONTs) are connected together in a multiple-access manner, includes: a 2:2 splitter connected to two PON line terminations (LTs) in the OLT; and two N:1 splitters which are connected to the 2:2 splitter, and each of which is connected to two PON LTs in the ONT. According to the method and apparatus, an economical effect can be provided in which two links, an operational link and a protection link, in the PON can provide a partial duplex function at a lower cost. Also, a protection switching time can be reduced by simplifying a restoration process so that when an error is detected, an operational state is returned by protection switching.

A radio frequency device has an input transistor from which a capacitance is seen, and a fast charging circuit for charging the capacitance. The input transistor receives a radio frequency signal. The capacitance is quickly charged when the device is switched from off to on and / or from low gain to high gain, thereby reducing the switching-on time of the device.

The time required for switch the channel can be remarkably curtailed. When broadcasting signals through a plurality of information channels with an OFDM system, the plurality of information channels are multiplexed in the sense of frequency and collectively subjected to IFFT modulation for connected transmission instead of subjecting the plurality of information channels independently to OFDM modulation for transmission. With this arrangement, the efficiency of exploitation of frequencies is improved. According to the invention, the OFDM frames are synchronized for each information channel for the purpose of connected transmission. Then, the OFDM receiver can switch the information channel for signal reception, maintaining the frame synchronizing signals.

An electrochemical device includes at least one carrier substrate, and a stack of functional layers including at least one electrically conducting layer that includes metal oxide(s), and a multicomponent electrode including at least one electrochemically active layer, at least one higher-conductivity material and at least one network of one of conducting wires and conducting strips. The higher-conductivity material has a surface resistance that is lower than a surface resistance of the electrically conducting layer. The stack of functional layers is arranged between two substrates, and each may be rigid, of glass type or rigid polymer or semi-rigid or flexible of PET type.

A clutch system includes a clutch device with at least one clutch arrangement for installation in a motor vehicle drive train between a drive unit and a transmission. The at least one clutch arrangement is actuated by a slave cylinder using a pressure medium which is supplied to the clutch device by a first pump. A further medium is also supplied to the clutch device by a second pump arrangement as an operating medium used during operation of the clutch device. The further medium is selectively supplied as a pressure medium to the slave cylinder.

An apparatus for receiving and processing a broadcast signal in a mobile broadcasting terminal is provided. A preprocessor receives a broadcast signal, converts the broadcast signal into a baseband signal, and then performs OFDM demodulation, Viterbi decoding, and convolutional deinterleaving thereon. A first Reed-Solomon (RS) decoder RS-decodes the signal output from the preprocessor, and outputs a Transport Stream (TS) packet. A checker checks Cyclic Redundancy Check (CRC) of the TS packet. A datagram extractor extracts a datagram having a good CRC result. A datagram controller receives the datagram having a good CRC result and outputs the received datagram to an application controller. The application controller decodes the broadcast data using the datagram received from the datagram controller and provides the decoded broadcast data to a user.

A memory circuit for use in a data processing circuit is described, in which memory cells have at least two states, each state being determined by both a first voltage level corresponding to a first supply line and a second voltage level corresponding to a second supply line. The memory circuit comprises a readable state in which information stored in a memory cell is readable and an unreadable state in which information stored in said memory cell is reliably retained but unreadable. Changing the first voltage level but keeping the second voltage level substantially constant effects a transition between the readable state and the unreadable state. In use, the static power consumption of the memory cell in the unreadable state is less than static power consumption of the memory cell in the readable state.

A control circuit for controlling a switching element in a switching power supply by generating a switching signal is disclosed. The control circuit may include a short start circuit that generates a switching signal so that an output voltage of the switching power supply gradually increases for a period until the output voltage reaches a predetermined reference voltage. The soft start circuit may increase the output voltage at a first limiting speed when the output voltage is lower than a predetermined threshold voltage, and may increase the output voltage at a second limiting speed which is set higher than the first limiting speed when the output voltage is higher than the threshold voltage.

Disclosed is a switching gate driver of an IGBT device, including a resistor unit to control a gate current of the IGBT device; and a voltage reader that outputs a control signal to control a variable resistor unit of the resistor unit to the resistor unit, according to a collector-emitter voltage of the IGBT device.

The invention provides a SDN (Software Defined Network)-based heterogeneous network convergence framework. According to the framework, the core idea of control and data separation in the software defined network is referred, a controller is added in an EPC core network, user identity information is packaged to be a unique user identifier to serve as the identity certificate during the network access and switching process. The concept of the user identifier is used, a method of realizing virtual switching under the control of the controller is brought forward, the switching access process can be theoretically simplified, and network access time delay can then be reduced. After switching, the IP remains unchanged, the time spent on IP layer switching in the case of heterogeneous network switching is saved, the target of reducing the entire switching time delay is achieved, IP address management and user safety management in a mobile environment are facilitated as the IP is maintained, and a feasible solution is provided for solving the problem of seamless switching between the LTE network and the WLAN network.

A DC-DC converter includes a switch, a rectifier, a smoothing circuit, and a control circuit. The control circuit includes an output detection circuit for outputting an error signal, a current detection circuit for outputting a current detection signal in a period in which at least the switch is OFF, a first circuit for outputting a first signal for setting a timing of turning ON of the switch according to a comparison result between the error signal and the current detection signal, and a second circuit for outputting a second signal for setting an ON time of the switch, according to a reduction in output power from the smoothing circuit, so that the ON time of the switch is reduced, and generates the control signal, based on the first and second signals.