912 results about "Photoelectrochemistry" patented technology

A photoelectrochemical assay apparatus for determining chemical oxygen demand (COD) of a water sample which consists of a) a measuring cell for holding a sample to be analysed b) a titanium dioxide nanoparticle photoelectric working electrode and a counter electrode disposed in said cell, c) a UV light source adapted to illuminate the photoelectric working electrode d) control means to control the illumination of the working electrode e) potential measuring means to measure the electrical potential at the working and counter electrodes f) analysis means to derive a measure of oxygen demand from the measurements made by the potential measuring means. The method of determining chemical oxygen demand of a water sample, comprises the steps of a) applying a constant potential bias to a photoelectrochemical cell, containing a supporting electrolyte solution; b) illuminating the working electrode with a UV light source and recording the background photocurrent produced at the working electrode from the supporting electrolyte solution; c) adding a water sample, to be analysed, to the photoelectrochemical cell; d) illuminating the working electrode with a UV light source and recording the total photocurrent produced; e) determining the chemical oxygen demand of the water sample according to the type of degradation conditions employed. The determination may be under exhaustive degradation conditions, in which all organics present in the water sample are oxidised or under non-exhaustive degradation conditions, in which the organics present in the water sample are partially oxidised.

The invention provides a method and a device for realizing the photoelectrochemical micro-etch processing of a masked electrode, and relates to the micro processing field in the manufacturing technology. A masked electrode used by the invention comprises a glass substrate, an indium tin oxide (ITO) layer and a photoresist mask layer, wherein the conductive light-permeable ITO layer is used as a tool electrode for electrochemical processing and can be permeated by a laser beam, and the photoresist mask layer can limit the action zones of the laser beam and the electrochemical electrode to achieve the double effects of a beam mask and an electric field mask. When the laser beam permeates the masked electrode, a mask pattern is imaged on the surface of a workpiece, the force effect of a shock wave generated by the irradiation of the laser between the workpiece and the electrolyte enables the passivation layer to be removed by the generation of stress corrosion. Meanwhile, the workpiece material at the laser-irradiated part is removed by etching under the action of the photoelectrochemical reaction. The invention can effectively enhance the processing efficiency, the micro processing degree and the processing precision of the complex pattern, and is applicable to the micro processing of the conductive metal material.

The present invention relates to a semiconductor device for production of a gas from a material comprising the gas using light as the sole power source. In an embodiment, the semiconductor comprises a substrate; a solid-state semiconductor layer disposed on the substrate; a photoactive semiconductor top layer further comprising a photoelectrochemical electrode junction; and an interface layer disposed between the solid-state semiconductor layer and the photoactive semiconductor top layer. A surface of the photoactive semiconductor top layer is exposed to both a source of light such as the sun and to the material, e.g. a liquid electrolyte. The gas is liberated from the material, e.g. hydrogen liberated from a liquid electrolyte. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

The invention relates to a preparing method of a photoelectrochemical sensor based on sandwich cardiac troponin T marked by Ag2Se@CdSe and application, and belongs to the technical field of novel functional materials and biosensing detection. According to concrete contents of the preparing method and the application, CeO2-TiO2 composite nanometer materials with photoelectrocatalytic activity are used as optical activity substrate materials; Ag2Se@CdSe is used as an antibody marker; the sandwich photoelectrochemical sensor is prepared through the signal amplification effect of the marker Ag2Se@CdSe on the substrate materials, and is used for the high-sensitivity detection of the cardiac troponin T of myocardial damage specific marker. The method has the important significance on the early diagnosis and treatment of acute myocardial infarction.

The invention relates to construction of a photoelectrochemical sensor which is based on conformation transition of G-quadruplex DNAzyme, and belongs to the field of photoelectrochemical sensor technology of analytical chemistry, wherein the conformation transition is induced by Pb2+, and the photoelectrochemical sensor is capable of realizing supersensitive sensing of Pb2+ effectively. K+ is replace by Pb2+ to induce the conformation transition of G-quadruplex DNAzyme so as to decrease enzymatic activity, so that enzyme biological catalytic precipitation reaction on an ITO electrode which is modified by CdS quantum dots is influenced, and photoelectrochemical sensing detection of Pb2+ is realized. G-quadruplex DNAzyme is applied in a photoelectrochemical sensing system for detection of Pb2+ for the first time; the photoelectrochemical sensor possesses advantages of high selectivity and high ensitivity; and detection limit of Pb2+ reaches to 1.0*10<-8>M.

The invention discloses a photoelectrode and a preparation method thereof. A metal nitride substrate serves as a current collection body and is tightly contacted with a photoactive layer which is a non-complete oxide semiconductor with or without the decoration of a promoter, so that the photoelectrochemical photoelectrode is formed. The preparation method comprises the following steps of: firstly, preparing the conductive metal nitride substrate, wherein the lowest sheet resistance of the conductive metal nitride substrate is 1.8 ohm per square, the electrical resistivity is 0.16 mohm per centimeter, the conductive metal nitride substrate is superior to commercial FTO and ITO; and secondarily, depositing or coating the semiconductor or a precursor containing a semiconductor metal constituent, performing high-temperature processing in an inert atmosphere or a hydride atmosphere of the semiconductor nonmetal constituent. The metal nitride substrate can keep conductivity after being subjected to high-temperature processing in the inert or hydride atmosphere (such as to 900 DEG C in ammonia gas), and is applicable for high-temperature preparation process of a non-all oxide semiconductor photoelectrode, and the whole photoelectrode preparation process is easy to industrialize. The photoelectrode can be used for application such as water decomposition, hydrogen preparation and carbon dioxide conversion by means of solar energy in photoelectrochemistry.

The invention belongs to the technical fields of new energy and photoelectrochemistry, and specifically discloses a large-size nano-porous BiVO4 photo-anode as well as a preparation method and an application thereof. FTO conductive glass is taken as a substrate, bismuth nitrate is taken as a bismuth source, the FTO glass is immerged into a bismuth nitrate electrolyte at a certain speed, bismuth metal layer deposition and calcining are carried out to obtain bismuth oxide, then the surface of bismuth oxide is coated with DMSO solution containing vanadium(IV)oxy acetylacetonate (VO(acac)2) in a dripping manner, and finally calcining is carried out to obtain the photo-anode. The photo-anode prepared by the preparation method has the advantages of being simple in synthesis method, moderate in reaction conditions, pollution-free and the like, and good in prospect in the fields of photoinduction, capacitors, photoelectrocatalysis, photocatalysis and the like. Via experimental study, the photocurrent density of the nano-porous BiVO4 photo-anode in a photoelectrochemical test exceeds 1.4mA / cm<2>, the photon-to-electron conversion efficiency in a main light absorption area reaches 17%, and excellent stability is shown in the photoelectrochemical test.

The invention pertains to a process for manufacturing a fluoropolynner film comprising a fluoropolymer hybrid organic / inorganic composite, said process comprising the following steps: (i) providing a mixture of: - at least one fluoropolymer [polymer (F)]; - at least one metal compound [compound (M)] having formula: X4-mAYm wherein m is an integer from 1 to 4, A is a metal selected from the group consisting of Si, Ti and Zr, Y is a hydrolysable group and X is a hydrocarbon group, optionally comprising one or more functional groups; - a liquid medium consisting essentially of at least one ionic liquid (IL) and, optionally, at least one additive (A); - optionally, at least one electrolytic salt (ES); and - optionally, at least one organic solvent (S); (ii) hydrolysing and / or polycondensing said compound (M) to yield a liquid mixture comprising fluoropolymer hybrid organic / inorganic composite comprising inorganic domains and incorporating said liquid medium; (iii) processing a film from the liquid mixture obtained in step (ii); and (iv) drying and then, optionally, curing the film obtained in step (iii) for obtaining the fluoropolymer film. The invention also pertains to the fluoropolymer film obtained from said process and to use of said fluoropolymer film in electrochemical and photo-electrochemical devices.

The invention relates to a preparation method of an aptamer photoelectrochemical sensor for high-sensitivity high-selectivity detection of MC-LR. The preparation method comprises preparing titanium dioxide nanotubes on a titanium matrix by an anodization method, carrying out modification with cadmium sulfide nanoparticles, functionally assembling chitosan and glutaraldehyde to the surface of an electrode so that a photoelectric biological interface is built, and bonding a MC-LR aptamer with a specific base sequence to the surface of the base electrode by chemical bonding so that the MC-LR aptamer photoelectrochemical sensor is prepared. Through combination of a supersensitive photoelectric analysis technology and an aptamer technology with a MC-LR specific recognition function, the preparation method realizes high-sensitivity high-selectivity analysis detection of MC-LR, and has the MC-LR detection limit of 5.3*10<-12> mol / L and a linear detection range of 7.2*10<-8> to 8*10<-12> mol / L. Compared with the prior art, the preparation method has the advantages of simple processes, fast response and low cost and can realize high-sensitivity high-selectivity analysis of MC-LR.

The invention relates to a phenoxazine dye and a photoelectric converter using the dye, and belongs to the technology field of phenoxazine dyes. The technical proposal is that: the chemical structure of the dye contains substituted phenoxazine and the derivative thereof as electron donors and different conjugated groups as bridging chains, wherein one end of the bridging chains are connected with different electron-withdrawing groups. An electron-donating group on a nitrogen atom and lone-pair electrons on an oxygen atom interact with a chromophoric conjugated system, thereby resulting in more easier charge transfer of the excited state of molecules and generating unique photoelectric property. The phenoxazine dye has good application performance in dye-sensitized solar cells, and can replace expensive noble metal photosensitive dye in dye-sensitized solar cells.