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Gallium oxide solar-blind ultraviolet detector

An ultraviolet detector and gallium oxide technology, applied in the field of gallium oxide solar-blind ultraviolet detectors, can solve problems such as restricting the photoelectric performance of the detector, achieve high reliability, reduce interface defects, and improve photoelectric gain.

Pending Publication Date: 2021-11-16
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this heterostructure has certain limitations, such as defects and interface states caused by lattice mismatch, carrier blocking caused by conduction band mismatch, and long-wave response caused by heterogeneous materials, etc.
In summary, the main difficulty in the research of gallium oxide detectors lies in the design and fabrication of the homogeneous PN junction, which has become an important bottleneck in the development of high-performance solar-blind ultraviolet detectors, seriously restricting the further optimization and improvement of the photoelectric performance of the detectors.

Method used

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Experimental program
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Embodiment 1

[0033] combine figure 1 As shown, the present embodiment is a gallium oxide solar-blind ultraviolet detector, including a substrate layer 1, a gallium oxide layer 2, a passivation layer 3, a ferroelectric layer 4, an electrode layer first electrode 5 and an electrode layer second electrode 6 .

[0034] The material of substrate layer 1 is single crystal Ga 2 o 3 The gallium oxide layer 2 is arranged on the surface of the substrate layer 1, and the material of the gallium oxide layer 2 is single crystal gallium oxide; the passivation layer 3 is arranged on the surface of the gallium oxide layer 2, and the material of the passivation layer 3 is Si 3 N 4 , the thickness of the passivation layer 3 is 5nm; the ferroelectric layer 4 is arranged on the surface of the passivation layer 3, and the material of the ferroelectric layer 4 is Pb(Zr,Ti)O 3 The base ferroelectric material, the thickness of the ferroelectric layer 4 is 20nm; the first electrode 5 of the electrode layer and...

Embodiment 2

[0037] combine figure 2 As shown, the present embodiment is a gallium oxide solar-blind ultraviolet detector, including a substrate layer 1, a gallium oxide layer 2, a passivation layer 3, a ferroelectric layer 4, an electrode layer first electrode 5 and an electrode layer second electrode 6 .

[0038] Substrate layer 1 material is sapphire Al 2 o 3 The gallium oxide layer 2 is arranged on the surface of the substrate layer 1, and the material of the gallium oxide layer 2 is single crystal gallium oxide; the passivation layer 3 is arranged on the surface of the gallium oxide layer 2, and the material of the passivation layer 3 is SiO 2 , the thickness of the passivation layer 3 is 20nm; the ferroelectric layer 4 is arranged on the surface of the passivation layer 3, and the material of the ferroelectric layer 4 is BaTiO 3 The base ferroelectric material, the thickness of the ferroelectric layer 4 is 100nm; the first electrode 5 of the electrode layer and the second electro...

Embodiment 3

[0041] combine image 3 As shown, the present embodiment is a gallium oxide solar-blind ultraviolet detector, including a substrate layer 1, a gallium oxide layer 2, a passivation layer 3, a ferroelectric layer 4, an electrode layer first electrode 5 and an electrode layer second electrode 6 .

[0042] The material of the substrate layer 1 is GaN; the gallium oxide layer 2 is arranged on the surface of the substrate layer 1, and the material of the gallium oxide layer 2 is single crystal gallium oxide; the passivation layer 3 is arranged on the surface of the gallium oxide layer 2, and the material of the passivation layer 3 is Al 2 o 3 , the thickness of the passivation layer 3 is 100nm; the ferroelectric layer 4 is arranged on the surface of the passivation layer 3, and the material of the ferroelectric layer 4 is BiFeO 3 The base ferroelectric material, the thickness of the ferroelectric layer 4 is 300nm; the first electrode 5 of the electrode layer and the second electro...

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Abstract

The invention provides a gallium oxide solar-blind ultraviolet detector which comprises a substrate layer, a gallium oxide layer, a passivation layer, a ferroelectric layer and an electrode layer, wherein the gallium oxide layer is arranged on the surface of the substrate layer, the passivation layer is arranged on the surface of the gallium oxide layer, the ferroelectric layer is arranged on the surface of the passivation layer, the ferroelectric layer covers part of the passivation layer, and the electrode layer covers the gallium oxide layer. According to the novel gallium oxide solar-blind ultraviolet detector designed by the invention, the ferroelectric layer is introduced, a local field formed by spontaneous polarization of a ferroelectric material is utilized, and the energy band structure of the gallium oxide layer covered by the ferroelectric layer is regulated and controlled, so that the construction of a homogeneous PN / NPN / PNP junction of the gallium oxide layer is realized, the photoelectric gain of the detector and the separation efficiency of photon-generated carriers are improved, and then the solar-blind ultraviolet photoelectric detector with low power consumption, high reliability and high sensitivity is obtained.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a gallium oxide solar-blind ultraviolet detector. Background technique [0002] The sun-blind ultraviolet detector uses the characteristic ultraviolet working band (200nm-280nm) corresponding to the sun-blind area, which can effectively avoid the influence of space solar background radiation. It has the characteristics of high sensitivity, strong confidentiality, low background interference, and low false alarm rate. It is widely used in military early warning, confidential communication and environmental monitoring. [0003] Gallium oxide (Ga 2 o 3 ) is an emerging ultra-wide bandgap semiconductor material (Eg=4.9eV), which has five different structures of α, β, γ, δ, ε, among which β-Ga belonging to the monoclinic phase 2 o 3 The most stable, it can realize the continuous adjustable bandgap in the whole sun-blind zone, and the preparation process of its high-q...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/103H01L31/032H01L31/0352
CPCH01L31/103H01L31/032H01L31/035272
Inventor 刘宁涛张文瑞叶继春
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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