Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Reduced graphene oxide film photoelectric detector and preparation method and application thereof

A graphene film and photodetector technology, applied in the field of photoelectric detection, can solve the problems of complex processing method, low photoresponsivity, narrow detection light band, etc., and achieves simple preparation process, high photoelectric response rate, and low preparation temperature. Effect

Active Publication Date: 2018-06-29
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These technologies have achieved good results, but there are still many problems, such as relatively complex processing methods, narrow detection light band, low photoresponsivity, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reduced graphene oxide film photoelectric detector and preparation method and application thereof
  • Reduced graphene oxide film photoelectric detector and preparation method and application thereof
  • Reduced graphene oxide film photoelectric detector and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Preparation of reduced graphene oxide:

[0051] 1) Disperse graphene oxide in 5mL deionized water, ultrasonically disperse for 10-60min to obtain a graphene oxide solution (2mg / mL), then disperse it in a petri dish, and dry it at 40-80°C to remove water;

[0052] 2) Add 5 mL of 50% hydrazine hydrate solution to the dried culture dish, soak at 10-30° C. for 5-24 hours, and then wash with water and ethanol for 3-5 times respectively to obtain reduced graphene oxide.

Embodiment 2

[0054] The preparation method of reduced graphene oxide is the same as in Example 1.

[0055] Preparation of reduced graphene oxide thin film photodetectors with substrate:

[0056] 1) Add reduced graphene oxide to ethanol, ultrasonically disperse for 2-10 minutes, and make a dispersion with a concentration of 1.3 mg / mL;

[0057] 2) Apply 0.6mL of reduced graphene oxide dispersion evenly on the glass substrate by drop coating method, and then dry at 15-60°C for 5-24h to obtain reduced graphene oxide film, the size of the glass substrate is 13× 13mm, thickness 0.5-2.5mm;

[0058] 3) Evaporating copper on the reduced graphene oxide film to obtain copper interdigitated electrodes, that is, to obtain the photodetector, the prepared reduced graphene oxide film photodetector structure schematic diagram is as follows figure 1 As shown in A, it can be seen from the figure that the photodetector includes a glass substrate 1 , a reduced graphene oxide film layer 2 , and copper interdi...

Embodiment 3

[0064] The preparation method of reduced graphene oxide is the same as in Example 1.

[0065] Preparation of reduced graphene oxide thin film photodetectors with substrate:

[0066] 1) Add reduced graphene oxide to ethanol, ultrasonically disperse for 2-10 minutes, and make a dispersion with a concentration of 1.3 mg / mL;

[0067] 2) Apply 0.9 mL of reduced graphene oxide dispersion evenly on a glass substrate by drop coating, and then dry at 15-60°C for 5-24 hours to obtain a reduced graphene oxide film with a glass substrate size of 13× 13mm, thickness 0.5-2.5mm;

[0068] 3) Evaporating copper on the reduced graphene oxide film to obtain copper interdigitated electrodes.

[0069] The resulting reduced graphene oxide film was analyzed by a scanning electron microscope, and the results showed that the thickness of the reduced graphene oxide film was 59.1 μm.

[0070] Photoelectric detection experiment:

[0071] A reduced graphene oxide film photodetector with a substrate is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
concentrationaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a reduced graphene oxide film photoelectric detector comprising a reduced graphene oxide film and a surface electrode. The reduced graphene oxide film is a substrate-containingreduced graphene oxide film or a substrate-free reduced graphene oxide film. The surface electrode is a symmetric interdigital electrode, and is prepared through metal vapor plating on the reduced graphene oxide film. The preparation process of the invention is very simple, and the reduced graphene oxide film photoelectric detector obtained by the method has the characteristics of high response rate, controllable area and wide spectrum detection at normal temperature and at atmospheric pressure. It is found that a self-supporting substrate-free reduced graphene oxide film can be obtained through a very simple substrate stripping method, and the self-supporting substrate-free reduced graphene oxide film photoelectric detector prepared by metal vapor plating has enhanced photoelectric response property and high light absorbance.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection. More specifically, it relates to a reduced graphene oxide thin film photodetector and its preparation method and application. Background technique [0002] Due to its excellent characteristics such as ultra-high electron mobility at room temperature, ultra-high electrical conductivity, and broad-spectrum light absorption (absorption from ultraviolet, visible, infrared, far-infrared, and even terahertz), graphene has great potential in the field of photoelectric detection. Significant advantages and broad application prospects over other semiconductor photodetectors. On the one hand, the Dirac band structure of graphene will lead to photogenerated carrier multiplication effect compared with conventional semiconductor photodetectors. On the other hand, the carrier injection effect of the metal electrode and the external bias can modulate the Fermi level of graphene, causing the in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L31/18H01L31/0224
CPCH01L31/0224H01L31/09H01L31/18Y02P70/50
Inventor 贺军辉田华
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com