119results about How to "Achieve passivation" patented technology

The invention relates to coating technology, in particular to an environmental-friendly polyaniline modified micaceous iron oxide anticorrosive coating and preparation method thereof, which solves theproblem that the prior micaceous iron oxide coating has poor anticorrosion performance, and needs to be matched with pigments containing lead and chromate during manufacturing. The environmental-friendly polyaniline modified micaceous iron oxide anticorrosive coating comprises film-forming material, polyaniline modified micaceous iron oxide, and the like. As polyaniline coating layers are formedon the surfaces of the micaceous iron oxide by an oxidative polymerization method, the treated micaceous iron oxide has the effect of passivating metal, and phytic-acid coating layers on the surfacesof the micaceous iron oxide play a role in inhibiting corrosion of metal. The environmental-friendly polyaniline modified micaceous iron oxide anticorrosive coating has strong corrosion resistance andpermeation resistance, can be applied to heavy-duty engineering of petrochemical equipment, pipelines, offshore oil platforms, wharf facilities, ships and the like.

The invention discloses an austenitic stainless steel cleaning and passivating agent. The austenitic stainless steel cleaning and passivating agent is composed of, by mass, 30%-40% of citric acid, 0.1%-1% of ethylene diamine tetraacetic acid disodium, 1%-5% of 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP), 3%-8% of glycollic acid, 3%-8% of phosphoric acid, 0.1%-2% of a non-ionic surface activeagent, 0.5%-3% of 322H, 0.5%-1% of sodium dodecylbenzenesulfonate, 0%-0.5% of yttrium nitrate, 0.1%-1% of corrosion inhibitor and the balance water. The prepared degreasing, rust removing and passivating agent has the characteristics of being environment-friendly, free of pungent smell and free of toxicity, harm to people and the environment can be remarkably reduced, and the production cost is effectively reduced.

The invention discloses an atomization device for preparing alloy metal powder. The atomization device comprises a body. A vacuum melting chamber and an atomization chamber are sequentially arranged in the body from top to bottom. A melting device and a heating device are arranged in the vacuum melting chamber. The heating device heats the melting device. The melting device comprises a liquid outlet. The liquid outlet communicates with the top of the atomization chamber through a diversion pipe. A gas spray nozzle is arranged in the atomization chamber and is connected with high-pressure inert gas through a pipeline. The gas spray nozzle sprays the high-pressure inert gas towards an outlet of the diversion pipe. An oxygen-containing gas pipeline and a gas inlet device connected with the oxygen-containing gas pipeline are arranged in the atomization chamber. The oxygen-containing gas pipeline conveys oxygen-containing gas into the atomization chamber through the gas inlet device. By means of the atomization device, the surface of the alloy metal powder can be passivated in the atomization process, and therefore the sphericity degree of copper, indium and gallium alloy powder and the phenomenon of the strong adhesion among the powder are controlled.

The invention provides a back surface junction N-type double-sided crystal silicon cell and a preparation method thereof. The cell comprises a front surface Ag electrode, a front surface antireflection film, a phosphorus diffusion N+ front surface field layer, an N-type substrate, a boron diffusion emission electrode P+ layer, a back surface passivation composite film and a back surface AgAl electrode. The front surface and the back surface of the cell have a textured structure. The back surface passivation composite film comprises a borosilicate glass layer and a silicon nitride layer. The borosilicate glass layer is arranged on the boron diffusion emission electrode P+ layer. The silicon nitride layer is deposited on the borosilicate glass layer. Both of the front surface and the back surface of the cell can effectively receive sunlight irradiation for power generation so that comprehensive efficiency of the cell can be enhanced; and the laminated film of the borosilicate glass layer and the silicon nitride layer through oxidation treatment is adopted to act as a boron emission electrode passivation layer and a diffusion masking layer of subsequent phosphorus diffusion so that boron emission electrode passivation and diffusion masking functions can be realized simultaneously, and the process of multiple times of etching and mask deposition in the manufacturing process can be reduced. The back surface junction N-type double-sided crystal silicon cell is simple in technology, high in production efficiency and low in production technology cost.

The invention discloses a preparation method for a Ge-on-insulator (GeOI) substrate and belongs to the field of semiconductor devices. Passvating treatment is realized on an interface of a Ge film of the upper layer and a buried oxygen layer in the process of preparing the GeOI substrate in the method, and thereby, the state density of the interface is reduced, and the quality of the back interface of the GeOI substrate is increased. The preparation method for the GeOI substrate is capable of effectively reducing the dielectric constant of the buried oxygen (BOX) layer and is favorable of restraining a short-channel effect of a metal-oxide-semiconductor field effect transistor (MOSFET) prepared based on the GeOI substrate.

The present invention relates to a comprehensive treatment agent, which comprises, by mass, 25.0-30.0% of phosphoric acid, 1.0-3.0% of zinc oxide, 0.1-0.5% of sodium molybdate, 4.0-7.0% of zinc dihydrogen phosphate, 0.3-1.2% of potassium chlorate, 0.3-1.2% of a surfactant, 0.0-2.3% of triethanolamine, 0.8-2.3% of citric acid, 0.1-0.3% of thiourea, and 58.0-62.6% of water. According to the present invention, the treatment agent can be recycled, a treatment cost is low, and pollution on the environment can not be generated.

The invention discloses a method for preparing a germanium-on-insulator (GeOI) substrate. In the method, a back interface is passivated in the process of preparing the GeOI substrate; and the method comprises the following steps of: providing a semiconductor germanium substrate and a silicon substrate respectively, cleaning the germanium substrate and the silicon substrate, and removing natural oxide layers on the surfaces of the germanium substrate and the silicon substrate; growing a layer of SiO2 on the silicon substrate; depositing a layer of SixNy on the SiO2; depositing SiO2 for bonding on the SixNy, and depositing fluoridized SiO2 (FSG) for bonding on the germanium substrate; performing surface activation treatment on the SiO2 on the SixNy and the fluoridized SiO2 (FSG) on the germanium substrate, and performing alignment bonding along activated surfaces; annealing; and thinning. By the method, the quality of the back interface of the GeOI substrate can be improved.

The invention discloses a preparation method of a low-defect quasi-two-dimensional perovskite film based on methanesulfonic acid negative ion induction. According to the method, methanesulfonic acid (MeS) negative ions are led in an L2An-1MnX3n+1 perovskite precursor to adjust phase compositions, so that a more effective energy transfer way is generated. Crystal boundary and surface defect inactivation is achieved by the MeS negative ions, and non-radiative recombination is effectively restrained. The service life of an exciton of the prepared quasi-two-dimensional perovskite film is obviouslyprolonged, and three-dimensional perovskite crystal particles are obviously increased. CsMeS is added into quasi-two-dimensional metal halide perovskite precursor solution to adjust perovskite phasecompositions, so that more three-dimensional perovskite crystal particles are generated as compared with a traditional method, and the more effective energy transfer way is generated. According to themethod, mixing of perovskite crystal lattices in the used CsMeS is omitted, the crystal lattices only exist on the surfaces of the perovskite crystal lattices, crystal boundary and surface defect inactivation can be achieved by MeS negative ions in the CsMeS, and non-radiative recombination is effectively restrained.

The invention discloses a crystalline silicon solar cell surface passivation layer having good conductive performance. The surface passivation layer is a composite film lamination passivation layer which is disposed on the front surface and/or the back surface of a crystalline silicon solar cell and which has a dielectric-metal-dielectric structure, and the composite film lamination passivation layer comprises a first-layer medium film, a second-layer medium film and a metal film intermediate layer disposed between the first-layer medium film and the second-layer medium film. The surface passivation layer has the dielectric-metal-dielectric laminated structure and can achieve injection of current carriers into dielectrics, and the surface passivation layer has the good passivation effect and achieves a current transmission function of a surface passivation structure at the same time. The invention further discloses a method for achieving crystalline silicon solar cell surface passivation by utilizing the surface passivation layer enhancing conductivity.

The invention discloses a graphene modified aqueous epoxy heavy anti-corrosion coating which is prepared by mixing a component A and a component B in a weight ratio of 4:1, wherein the component A comprises 40-50 parts of a bisphenol A aqueous epoxy emulsion, 0.5-2 parts of graphene, 4-8 parts of aqueous zinc phosphate, 4-8 parts of aqueous zinc molybdate, 10-15 parts of iron oxide red, 1-2 parts of fumed silica, 1-2 parts of nano zinc oxide, 5-10 parts of mica iron oxide red, 1-2 parts of an organic corrosion inhibitor, 1-2 parts of a 179 anti-flash rust agent, 0.3-0.6 part of a 190 dispersant, 0.3-0.5 part of a 1008 wetting agent, 0.5-1.5 parts of a BYK-011 defoamer, 0.3-0.5 part of a 7580 foam inhibitor, 0.1-1.5 parts of a BYK420 anti-sagging auxiliary agent, 0.3-0.5 part of an AMP-95 pH regulator and some deionized water; the component B is a polyamine addition product aqueous epoxy curing agent. The coating disclosed by the invention has excellent physical property and excellent chemical resistance, in particular salt fog resistance; a film with the coating is firm and tenacious and wear-resistant, is high in adhesive force and construction adaptability and has very good environment-friendliness.

The invention belongs to the technical field of sludge treatment, and particularly discloses a sludge dewatering method. The method comprises the following steps: performing pre-reaction on sludge anda conditioner M; adding a flocculating agent to the pre-reaction system, and performing hydrothermal reaction under the sealed condition; finally, performing solid-liquid separation to recover waterin the pre-reaction system to obtain dry sludge. The conditioner M comprises industrial waste residues and an activator. According to the method, the content of heavy metals in water removed from thesludge is lower, and harmless treatment and reduction of the sludge are achieved.

The invention discloses a laser PN isolation process for a back surface field of a solar cell. The process comprises steps as follows: front cleaning and texturing, diffusion, PN isolation, post cleaning, silicon nitride deposition with a plasma enhanced chemical vapor deposition method, screen printing and sintering, and testing and sorting, wherein the PN isolation adopts laser etching and specifically comprises steps as follows: edge slotting is performed on the back surface of the solar cell with a fiber laser at a line scribing speed of 100-120 mm/s by surrounding the surface of the back surface of a silicon wafer, the distance between a slotting edge and the silicon wafer edge is 0.5mm, and the slotting depth is 10-15 mu m, so that PN isolation is realized. According to the process, a traditional wet etching process is replaced with laser isolation, and a traditional laser etching process is improved, so that the process requirement of removing an edge PN junction during the production process of solar cells can be met.

The invention relates to a low-temperature chemical cleaning method for a thermal power plant boiler and in particular relate to a process of carrying out low-temperature chemical cleaning passivation by utilizing EDTA (Ethylene Diamine Tetraacetic Acid). The process comprises the following steps: A. connecting a chemical cleaning platform with a system which needs to be cleaned to form a cleaning system, and flushing with circulating water after the connected cleaning system is subjected to a hydraulic test until effluent is transparent and is free from impurities; B. heating the cleaning system cyclically; C. carrying out alkali wash, and flushing; washing by use of EDTA; and passivating. The process has the following characteristics: energy is saved, the consumption is reduced, the cleaning period is shortened, the cleaning cost is reduced, and the boiler can be cleaned and passivated in one step. After the thermal power plant boiler is cleaned by the EDTA at low temperature, a passivation process is added. An alkali substance is added into EDTA cleanout fluid to regulate the pH value of the EDTA cleanout fluid so as to passivate the cleaned boiler. The cleaning process disclosed by the invention is suitable for boilers of various specifications and is beneficial to implementation and popularization on site.

The invention discloses a method for achieving aluminum powder passivation by wrapping aluminum powder with zirconium oxide. The method comprises the following steps that firstly, the aluminum powder needing to be wrapped is placed in a powder clamping device with the bottom provided with a filter net, and then the powder clamping device is placed in a cavity of an atom layer deposition reactor to be subjected to vacuum pumping; secondly, the cavity is heated, the cavity is constantly inflated with fluidization gas in the heating process, and the aluminum powder is pre-scattered; thirdly, when the cavity temperature reaches the preset temperature, the atom layer deposition reaction is started, and a layer of zirconium oxide film is deposited on the surface of the aluminum powder; and fourthly, the third step is repeatedly conducted, multiple layers of zirconium oxide films are deposited on the surface of the aluminum powder, and aluminum powder passivation is achieved. According to the method, the atom deposition technology is used for wrapping the surfaces of aluminum powder particles with a layer of zirconium oxide film with the nanometer thickness, aluminum powder passivation is achieved, and the beneficial effects that operation is convenient, and the technology is simple are achieved.

The high-strength utilization mode of the land in China accelerates the deterioration of a soil function, and soil pollution is very serious due to excessive application of chemical fertilizer and agricultural products. The crop yield declining and food safety incidents caused by soil degradation and soil pollution take place frequently and cause serious threats to people's health. The developmentof an eco-friendly, cheap and high-efficiency soil conditioner for improving soil fertility and reducing soil pollution is extremely urgent. The invention discloses a preparation method of a multifunctional soil improving agent. The preparation method comprises mixing waste biomass and a certain amount of attapulgite and modifying the mixture under specific conditions to obtain the multifunctional soil improving agent. The preparation method has simple processes. The multifunctional soil improving agent is renewable and eco-friendly, realizes a low cost, is rich in nutrients such as trace elements necessary for crop growth and can be used as organic fertilizer and a contaminated soil repairing agent.