Laser PN isolation process for back surface field of solar cell
A solar cell and back field technology, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve problems such as surface pollution of solar cells, reduction of photoelectric conversion efficiency of solar cells, loss of power generation area, etc., to reduce mechanical damage and Dust pollution, photoelectric conversion efficiency improvement, and the effect of reducing the minority carrier recombination center
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[0021] The present invention will be further described below in conjunction with the accompanying drawings and embodiments. It should be noted that the following description is only for explaining the present invention and does not limit its content.
[0022] Such as image 3 As shown, the present invention is a solar cell backfield laser PN isolation process, including the steps: pre-cleaning and texturing, diffusion, PN isolation, post-cleaning, plasma-enhanced chemical vapor deposition (PECVD) deposition of silicon nitride, wire mesh Printing and sintering, testing and sorting; the PN isolation adopts laser etching, and the specific method is: on the back of the solar cell, use a fiber laser to engrave the edge of the back surface of the silicon wafer at a rate of 100mm / s. The distance of the groove from the edge of the silicon wafer is 0.5mm, and the depth of the groove is 10-15μm, so as to realize PN isolation. The wavelength of the fiber laser is 1064nm and the frequency i...
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